Transmon Qubit Using Sn as a Junction Superconductor
Amrita Purkayastha, Amritesh Sharma, Param J. Patel, An‐Hsi Chen, Connor P. Dempsey, Shreyas Asodekar, Subhayan Sinha, Maxime Tomasian, Mihir Pendharkar, Christopher J. Palmstrøm, Moïra Hocevar, Kun Zuo, Michael Hatridge, Sergey Frolov
Superconductor qubits typically use aluminum–aluminum oxide tunnel junctions to provide the nonlinear inductance. Junctions with semiconductor barriers make it possible to vary the superconductor material and explore beyond aluminum. We use InAs semiconductor nanowires coated with thin superconducting shells of β-Sn to realize transmon qubits. By tuning the Josephson energy with a gate voltage, we adjust the qubit frequency over a range of 3 GHz. The longest energy relaxation time, T 1 = 27 μs, is obtained at the lowest qubit frequencies, while the longest echo dephasing time, T 2 = 1.8 μs, is achieved at higher frequencies. We assess the possible factors limiting coherence times in these devices and discuss steps to enhance performance through improvements in materials fabrication and circuit design.
Superconductor qubits typically use aluminum–aluminum oxide tunnel junctions to provide the nonlinear inductance. Junctions with semiconductor barriers make it possible to vary the superconductor material and explore beyond aluminum. We use InAs semiconductor nanowires coated with thin superconducting shells of β-Sn to realize transmon qubits. By tuning the Josephson energy with a gate voltage, we adjust the qubit frequency over a range of 3 GHz. The longest energy relaxation time, T 1 = 27 μs, is obtained at the lowest qubit frequencies, while the longest echo dephasing time, T 2 = 1.8 μs, is achieved at higher frequencies. We assess the possible factors limiting coherence times in these devices and discuss steps to enhance performance through improvements in materials fabrication and circuit design.
The anharmonicity of a transmon qubit, defined as the difference in energy level spacing, is a key design parameter. In transmons built from hybrid superconductor-semiconductor Josephson elements, the anharmonicity is tunable with gate voltages that control both the Josephson energy and the weak link transparency. In Sn-InAs nanowire transmons, we use two-tone microwave spectroscopy to extract anharmonicity ranging in absolute value from the transmon charging energy Ec to values smaller than Ec/10. This behavior contrasts with the predictions of the multi-channel short-junction model, which sets a lower limit on anharmonicity at Ec/4. Coherent operation of the qubit is still possible at the point of the lowest anharmonicity. These findings demonstrate the potential of quantum circuits that benefit from widely electrically tunable anharmonicity.
Abstract Superconducting qubits are one of the most promising physical systems for implementing quantum computers. However, executing quantum algorithms of practical computational advantage requires further improvements in the fidelities of qubit operations, which are currently limited by the energy relaxation and dephasing times of the qubits. Here, we report our measurement results of a high-coherence transmon qubit with energy relaxation and echo dephasing times surpassing those in the existing literature. We measure a qubit frequency of 2.9 GHz, an energy relaxation time T 1 with a median of 425 μs and a maximum of (666 ± 33)μs, and an echo dephasing time T2echo T 2 echo with a median of 541 μs and a maximum of (1057 ± 138)μs. We report in detail our design, fabrication process, and measurement setup to facilitate the reproduction and wide adoption of high-coherence transmon qubits in the academia and industry.
Superconducting qubits are among the most promising platforms for realizing practical quantum computers. One requirement to create a quantum processor is nonlinearity, which in superconducting circuits is typically achieved by sandwiching a layer of aluminum oxide between two aluminum electrodes to form a Josephson junction. These junctions, however, face several limitations that hinder their scalability: the small superconducting gap of aluminum necessitates millikelvin operating temperatures, the material interfaces lead to dissipation, and the sandwich geometry adds unwelcome capacitance for high-frequency applications. In this work, we address all three limitations using a novel superconducting weak link based on the superconductor-insulator transition. By locally thinning a single film of niobium nitride, we exploit its thickness-driven superconductor-insulator transition to form a weak link employing only atomic layer deposition and atomic layer etching. We utilize our weak links to produce a transmon qubit, 'planaron', with a measured anharmonicity of α/2π=235 MHz; at present, the linewidth is κ/2π=15MHz. The high superconducting gap of niobium nitride can enable operation at elevated temperatures in future devices, and the fully planar geometry of the weak link eliminates superfluous material interfaces and capacitances. The investigation of small patches of material near the SIT can shed new light on the nature of the transition, including the role of dissipation and finite-size effects.
Abstract We demonstrate that superconducting gatemon qubits based on superconductor-semiconductor-superconductor Josephson junctions can be constructed on hole-type Ge/Si core/shell nanowires. The frequency of the qubit can be set firstly by controlling the diffusion of Al in the nanowire via thermal annealing, which yields a roughly suitable critical supercurrent for the junction, and then by fine tuning of a gate voltage, by which an accurate adjustment of the frequency can be realized. On the resulted qubit, Rabi oscillation with an energy relaxation time T1~180 ns was observed in the time domain, and the gate voltage dependence of both T1 and the dephasing time T2 was investigated. Such a hole-type superconducting gatemon qubit, based on materials with strong spin-orbit coupling and the absence of hyperfine interaction, could be used for exploring the quantum coherence phenomena of hole-gas and potentially also Majorana physics in Ge-based quantum devices.
Superconducting qubit based on superconducting circuits consist of a superconducting capacitor and a Josephson junction with the transmon geometry is extensively used in advanced quantum processors, pursuing scalable quantum computing. The tuning of the qubit frequency of the transmon relies on magnetic flux-dependent interference between the supercurrents of two superconductor-insulator-superconductor (S-I-S) Josephson junctions in a superconducting loop. Josephson junction based on superconductor-semiconductor-superconductor (S-Sm-S) materials opens up a possibility to the gate-tunable transmon, referred to as the "gatemon", in which the qubit frequency can be tuned by electrostatic mean. Recent realizations of gatemons on III-V material platforms show impressive development on the alternative to the transmon, yet still leave a big question on the scalability. The silicon-germanium (SiGe) heterostructure is one of the potential platforms to host hybrid devices due to its high hole mobility and the low Schottky barrier at the Ge-metal interface. Additionally, the compatibility with the silicon-based semiconductor industry is a capable advantage for the scaling-up qubit platform.In this thesis, we develop gatemons based on the Al-Ge-Al Josephson junction in the SiGe heterostructure. Firstly, the robust fabrication recipe, found on a top-down approach, for Josephson Field Effect Transistors (JoFETs) is established. We perform measurements exhaustively on the JoFETs to study their properties as a function of the gate voltage, temperature, and magnetic field. The devices show gate-tunability of the critical current and the normal state resistance . The devices are estimated to have a high-transparency superconductor-semiconductor interface, as demonstrated by the high product on the SiGe heterostructure. In the finite-voltage regime, the features corresponded to multiple Andreev reflections (MARs) are observed. Then, we fabricate and characterize niobium nitride (NbN) superconducting resonators on SiGe heterostructure. We measure the resonators in the transmission mode and extract the resonant frequency , internal quality factor, and coupling quality factor from the transmission coefficient. Following that, we develop the fabrication process to integrate Al-Ge-Al junctions shunted with capacitors, or, in other words, gatemon, into the resonator scheme and perform the fabrication according to the design. We demonstrate the anticrossing feature in one of the fabricated gatemons. The resonant frequency of the gatemon is mapped using the two-tone spectroscopy technique and is found to be gate-tunable. The qubit has large spectral linewidth, implying a low coherence time. Additionally, we conduct the current-phase relationship (CPR) measurement on the junctions in the Superconducting QUantum Interference Device (SQUID) geometry. We can demonstrate that the junctions pose non-sinusoidal CPR. Further, the integer and half-integer Shapiro steps are observed in the current-voltage characteristic curves of irradiated junctions. This indicates that our junctions have the element, which can open up another possibility toward protected qubits.
Quantum computers promise to solve certain problems such as quantum chemistry simulations much more efficiently than their classical counterparts. Although it is still unclear what material system will ultimately host large-scale quantum computers, solid-state systems are promising candidates due to their inherent scalability and advanced fabrication techniques that can be adapted from comparable technologies. Crucially, a future quantum computer will depend on the quality of its most fundamental building block, the quantum bit, or qubit. Qubits, although ideally insensitive to potential noise, are very susceptible to slight changes in their environment. Therefore, they do not only make the building block for quantum computers, but are also precise sensors. One of the most studied solid-state implementations of a qubit is the transmon, a weakly anharmonic oscillator based on superconducting capacitive and nonlinear inductive elements. Typically, Al-AlOx-Al superconductor-insulator-superconductor Josephson junctions are used for the latter. The interaction of the transmon with the control circuitry, typically superconducting resonators, is described by circuit quantum electrodynamics. In this PhD thesis, a more recently demonstrated type of qubit is further developed and studied in detail using circuit quantum electrodynamics. In these qubits, the Josephson element of the transmon is replaced with indium arsenide nanowires, forming a superconductor-normal metalsuperconductor junction. In addition to the standard flux tunability, these qubits can also be voltage tuned. Due to the compatibility of all the materials used with an applied magnetic field, this type of qubit is a good candidate to be used as a precise and accurate sensor in a magnetic field. The goal of this work is to introduce the in-plane magnetic field as a new tuning knob to the toolbox of circuit quantum electrodynamics. Advances in material science, especially the epitaxial growth of an aluminum shell directly on the indium arsenide nanowire, have enabled the fabrication of nanowire transmons with state-of-the-art coherence. An understanding of their workings in a zero-field environment is important before applying a magnetic field. Thus, we characterize the noise these qubits are subject to (Chapter 4) and find a strong coupling of charge two-level systems to their Josephson energy next to the expected weakly coupled flux and voltage noise. Applying a magnetic field reveals that coherence in these qubits can be observed up to 70 mT, substantially above the superconducting gap of bulk aluminum (Chapter 5). Effects limiting the performance include the thick and fully covering aluminum shell, and the alignment and stability of the magnetic field. The use of different nanowires, the installation of a persistent-current vector solenoid and additional magnetic shielding then enables the operation of voltage- and flux-tunable devices in a magnetic field (Chapter 6). This constitutes a good starting point for circuit quantum electrodynamics experiments in a magnetic field, such as the investigation of the microscopic origin of flux-noise.