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arXiv:2407.05295

Simulation of temperature-dependent quantum gates in silicon quantum dots with frequency shifts

Yudai Sato, T. Kawahara

Published Jul 7, 2024• 0 citations
arXivHTMLPDF

Abstract

To achieve quantum computing using semiconductor spin qubits, the spin qubits must be precisely controlled. However, unexpected noise limits this precision and prevents the implementation of error correction codes. Specifically, frequency shifts have been found to suppress one-qubit gate fidelity. Although the exact source of the frequency shifts remains unclear, several experiments have indicated a relationship between the frequency shift and heating from the control signal. Based on these results, we modeled the heating effect using the low-temperature dependence of specific heat from the Debye model to simulate qubit control with frequency shifts. This model quantitatively reproduces some of the experimental results and makes it possible to simulate qubit gates with temperature-dependent frequency shifts. The simulated control fidelity of the proposed model was consistent with the experimental results, demonstrating that a gate fidelity above $99.9$% can be achieved in a hot environment. Additionally, our comparison of the two temperature-dependent frequency shift models reveals the condition for a microscopic frequency shift model in which the variance of the frequency shift is limited to a specific range. Furthermore, we investigated gate fidelity using the DRAG method and demonstrated the utility of temperature-dependent simulations.

DOI
10.48550/arxiv.2407.05295

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To achieve quantum computing using semiconductor spin qubits, the spin qubits must be precisely controlled. However, unexpected noise limits this precision and prevents the implementation of error correction codes. Specifically, frequency shifts have been found to suppress one-qubit gate fidelity. Although the exact source of the frequency shifts remains unclear, several experiments have indicated a relationship between the frequency shift and heating from the control signal. Based on these results, we modeled the heating effect using the low-temperature dependence of specific heat from the Debye model to simulate qubit control with frequency shifts. This model quantitatively reproduces some of the experimental results and makes it possible to simulate qubit gates with temperature-dependent frequency shifts. The simulated control fidelity of the proposed model was consistent with the experimental results, demonstrating that a gate fidelity above 99.999.999.9% can be achieved in a hot environment. Additionally, our comparison of the two temperature-dependent frequency shift models reveals the condition for a microscopic frequency shift model in which the variance of the frequency shift is limited to a specific range. Furthermore, we investigated gate fidelity using the DRAG method and demonstrated the utility of temperature-dependent simulations.
Electron spins trapped in quantum dots have recently proven to be a promising technology for the implementation of qubits, already demonstrating high fidelity single- and two-qubits gates. The next step towards fault-tolerant quantum computing is to increase the number of so-called spin qubits on the processor. However, this poses several challenges, one of which being how to implement single-qubit gates in multi-qubit systems, with high fidelity. This work focused on two aspects. The first one was to identify the physical phenomena and limitations that hinder the realisation of high fidelity single-qubit gates in multi-qubit environments. The second objective was to investigate, implement and optimise methods in order to minimise the impact of these perturbing phenomena. The identified perturbing effects include unwanted driving between a pulse and the neighbouring qubits, as well as frequency shifts induced by drive-spin coupling and non-ideal pulse in experimental setups. Crosstalk was addressed using pulse shaping (i.e. amplitude or phase modulation of the driving pulse to tailor its spectral characteristics and reduce the energy transmitted at unwanted frequencies). The performance of shapes taken from both NMR and signal processing literature was investigated, for various pulse parameters, through an extensive grid search. In addition, a frequency correction algorithm was devised: off-resonant drive frequencies are selected so that the shifted qubits are resonantly driven. It currently accounts for two phenomena: the AC Stark and Bloch-Siegert shifts. The algorithm furthermore tracks the changes caused by the time-dependent characteristics of the shaped pulses. The proposed frequency correction algorithm was shown to almost entirely negate the effects of the considered shifts, leading to unitary fidelity improvements by up to 55%. In addition, pulse shaping was demonstrated to noticeably improve the fidelity of simultaneous single-qubit rotations compared to unshaped driving. Rotations with fidelities as high as 99.98% were obtained for pi/2 rotations on two-qubits systems. Moreover, shapes whose Fourier transform is narrow and sharp, associated with low Rabi frequencies, were demonstrated to generally provide the highest fidelities of the tested configurations. Lastly, the trends and guidelines highlighted by these results were shown to scale to systems with larger numbers of qubits. The correction techniques investigated in this work have proven promising for the implementation of high fidelity single-qubit gates in multi-qubit systems. In particular, the guidelines for selecting a well-performing pulse shape should also be useful for the design of optimised driving schemes, regardless of the number of qubits involved. Additionally, the proposed frequency shift correction algorithm is expected to be able to handle arbitrary shifts, and so to be easily adaptable to use in experiments.
Electron spins in silicon quantum dots are a promising platform for fault-tolerant quantum computing. Low-frequency noise, including nuclear spin fluctuations and charge noise, is a primary factor limiting gate fidelities. Suppressing this noise is crucial for high-fidelity qubit operations. Here, we report on a two-qubit quantum device in natural silicon with universal qubit control, designed to investigate the upper limits of gate fidelities in a non-purified Si/SiGe quantum dot device. By employing advanced device structures, qubit manipulation techniques, and optimization methods, we have achieved single-qubit gate fidelities exceeding 99% and a two-qubit controlled-Z (CZ) gate fidelity of 91%. Decoupled CZ gates are used to prepare Bell states with an average fidelity of 91%, typically exceeding previously reported values in natural silicon devices. These results underscore that even natural silicon has the potential to achieve high-fidelity gate operations, particularly with further optimization methods to suppress low-frequency noise.
A comparison of gate fidelities between different spin qubit types defined in quantum dots and a donor under different control errors is reported. We studied five qubit types, namely the quantum dot spin qubit, the double quantum dot singlet-triplet qubit, the double quantum dot hybrid qubit, the donor qubit and the quantum dot spin-donor qubit. For each one, we derived analytical time sequences that realize single qubit rotations along the principal axis of the Bloch sphere. We estimated the effects of control errors on the gate fidelity by using a Gaussian noise model. Then we compared the gate fidelities among qubit implementations due to pulse timing errors by using a realistic set of values for the error parameters of control amplitudes.
Silicon spin qubits are promising for large-scale quantum-computer integration because they can fully leverage the well-developed semiconductor infrastructure. However, the low fidelity of two-qubit entanglement gates remains a key barrier to large-scale integrations. Recent simulations of silicon spin-qubit two-qubit gates have been performed on silicon-on-insulator (SOI) platforms, while nanosheet-based charge-qubit work has been limited to single-qubit operation using a two-dimensional Schrödinger approximation. In this work, we study silicon spin-qubit double quantum dots built on nanosheet technology using the Quantum Technology Computer-Aided Design (QTCAD) simulation suite to run three-dimensional Poisson and Schroedinger solvers, followed by a many-body solver to extract exchange interactions. We evaluate the exchange energy sensitivity to process and bias variations and then use QuTiP to solve the master equation for a two-qubit gate. The results show that millivolt-level bias variations at the plunger and middle barrier gates can reduce the gate fidelity below 99%, a common threshold target for many fault-tolerant quantum-computing algorithms. Gate-referred 1/f charge-noise effects are also analyzed through the resulting coherence time.
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of the existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit's energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced spin-orbit interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a comodeling framework for double quantum dot (DQD) devices and their charge noise environments. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods, and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two-qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97>97%>97 in the simulated Si-MOS devices at a typical TLF density of ${10}^{11}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 9191%91 in the presence of the same density of TLFs. We further investigate the one- and two-qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities, which can compromise the device yields in scaled qubit technologies.
Silicon spin qubits are a leading candidate for large-scale quantum computing owing to their compatibility with semiconductor manufacturing. However, scaling to useful fault-tolerant processors will likely generate thermal loads that exceed the cooling power available at millikelvin temperatures. Raising the operating temperature eases cooling requirements but reduces gate fidelity, increasing the overhead of quantum error correction. Identifying the operating temperature that minimizes total power consumption is therefore a key challenge for commercially viable quantum computers. Here, we use gate set tomography to benchmark two-qubit silicon chips fabricated in both industrial and academic environments over a range of temperatures. Elevated temperatures substantially shorten coherence times and increase gate and state-preparation-and-measurement infidelities. Based on these measurements, we develop a general power model for silicon quantum computers that combines cryogenic cooling requirements with error-correction overheads. We show that a finite optimal operating temperature exists and is strongly influenced by a crossover temperature near 1 K in current devices, above which gate fidelity degrades rapidly. These results connect device-level fidelity limitations to system-level power requirements, providing design guidelines for large-scale silicon quantum computers.