Abstract A superconducting microstrip single-photon detector (SMSPD) generally requires a shunt resistor to avoid latching, caused by its high current-carrying capacity and low kinetic inductance. Here, the effect of the shunt resistor on the behaviors of microbridge SMSPDs was investigated. We analyzed the change in equivalent switching current at different shunt resistances in two ways and determined the operating current range using intrinsic dark count rate (iDCR) curves. We observed that the reduction in shunt resistance can increase the operating current range, which helps to improve the internal detection efficiency (IDE) and reduce the iDCR. However, the reduction in the shunt resistance can reduce the pulse amplitude and increase the pulse decay time, which can degrade the timing jitter and count rate performance of the SMSPD. The trends of the experimental results can be qualitatively reproduced using a circuit model for an SMSPD with a shunt resistor, which provides useful information for the selection of shunt resistors. Furthermore, we report the improved detection performance of a helium-ion-irradiated SMSPD shunted with a small resistance of 5.2 Ω. We observed a weak IDE saturation with a bias current at a wavelength up to 2000 nm and a nonlinear relation between detection current and photon energy.
Abstract A superconducting microstrip single-photon detector (SMSPD) generally requires a shunt resistor to avoid latching, caused by its high current-carrying capacity and low kinetic inductance. Here, the effect of the shunt resistor on the behaviors of microbridge SMSPDs was investigated. We analyzed the change in equivalent switching current at different shunt resistances in two ways and determined the operating current range using intrinsic dark count rate (iDCR) curves. We observed that the reduction in shunt resistance can increase the operating current range, which helps to improve the internal detection efficiency (IDE) and reduce the iDCR. However, the reduction in the shunt resistance can reduce the pulse amplitude and increase the pulse decay time, which can degrade the timing jitter and count rate performance of the SMSPD. The trends of the experimental results can be qualitatively reproduced using a circuit model for an SMSPD with a shunt resistor, which provides useful information for the selection of shunt resistors. Furthermore, we report the improved detection performance of a helium-ion-irradiated SMSPD shunted with a small resistance of 5.2 Ω. We observed a weak IDE saturation with a bias current at a wavelength up to 2000 nm and a nonlinear relation between detection current and photon energy.
Generally, a superconducting nanowire single-photon detector (SNSPD) is composed of wires with a typical width of ∼ 100 nm . Recent studies have found that superconducting strips with a micrometer-scale width can also detect single photons. Compared with the SNSPD covering the same area, the superconducting microstrip single-photon detector (SMSPD) has smaller kinetic inductance, higher working current, and lower requirements in fabrication accuracy, providing potential applications in the development of ultralarge active area detectors. However, the study of SMSPD is still in its infancy, and the realization of its high-performance and practical use remains an open question. This study demonstrates a NbN SMSPD with a nearly saturated system detection efficiency (SDE) of ∼ 92.2 % at a dark count rate of ∼ 200 cps , a polarization sensitivity of ∼ 1.03 , and a minimum timing jitter of ∼ 48 ps at the telecom wavelength of 1550 nm when coupled with a single-mode fiber and operated at 0.84 K. Furthermore, the detector’s SDE is over 70% when operated at a 2.1 K closed-cycle cryocooler.
Abstract Superconducting microstrip single photon detectors (SMSPDs) exhibit high signal-to-noise ratios and large active areas, demonstrating broad application potential in high-energy particle detection, wide-field imaging, LiDAR, and related fields. To further improve the detection efficiency and operating temperature of SMSPDs, it is essential to bias the device with a current as close as possible to the depairing current—that is, to achieve the constriction factor (the ratio of the switch current to the depairing current) approaching unity. Currently, the geometric current crowding effect in the meandering region of the microstrip is regarded as the primary factor limiting the current constriction factor. In this study, we systematically evaluated three strategies for mitigating this effect: thickening the superconducting film at meandering region, increasing the width of the meandering region and localized ion milling in the straight section of the microstrip. Through theoretical simulations and comparative measurements of the switching current in identically sized MoSi microstrips incorporating these three modified structures, we demonstrated that all approaches effectively suppress current crowding. Notably, the ion milling method increased the device’s constriction factor from 0.44 ± 0.02 to 0.69 ± 0.02. This technique not only reduced current crowding but also enhanced device sensitivity. By implementing this approach, we achieved near-saturated intrinsic detection efficiency at 1550 nm under 1.7 K, offering a practical strategy for optimizing the performance of large-area SMSPDs.
Superconducting microstrip single-photon detectors (SMSPDs) with near-infrared sensitivity have significant advantages in terms of high quantum efficiency and low dark counts in a large active area. Hole-patterned superconductor microstrips have been reported for fast and efficient single-photon detection. In this work, we fabricated and characterized hole-patterned microstrips with different hole diameters on 5 nm thick MoSi films and an area of 500 × 500 μm2. We observed that the count rate curves of detectors 2 and 3 with holes tend to saturate slightly, whereas those of detector 1 without holes do not. Furthermore, the dark count is similar between detector 1 without holes and detector 2 with small holes and much lower than that of detector 3 with large holes. These experiments indicate that a proper hole is beneficial for efficiency without increasing the dark count rate.
Abstract To facilitate high optical coupling efficiency and absorptance, the active area of a superconducting nano/microstrip single-photon detector (SNSPD/SMSPD) is often designed as a meander configuration with a high filling factor (e.g. ⩾0.5). However, the switching current (I sw) of SNSPD/SMSPD, at which the detector switches into the normal state, is significantly suppressed by a geometry-induced ‘current crowding effect’, where there are sharp bends in the strip. Here, we propose and experimentally verify an alternative method to reduce current crowding both in SNSPD and SMSPD by directly increasing the thickness of the bends through the deposition and lift-off of a secondary superconducting film. We measure and compare the performance of SNSPDs and SMSPDs with different filling factors and bend configurations, with or without thickened bends. Improvements for detectors were observed in detection efficiency, intrinsic dark count rate, and time jitter, owing to the enhanced I sw. Our method provides a promising way of optimizing SNSPD/SMSPD detection performance.
Superconducting microstrips single-photon detectors (SMSPDs) are a novel type of single-photon sensor based on superconducting thin films patterned into micrometer-scale strip widths. Compared with superconducting nanowire single-photon detectors (SNSPDs), SMSPDs not only substantially lower the fabrication dependence on high-precision electron-beam lithography, but also exhibit lower kinetic inductance, higher bias current, and weaker polarization sensitivity. These advantages pave a new route toward superconducting single-photon detection systems with large active areas and low dark-count rates. Because of their performance, SMSPDs exhibit tremendous application potential in cutting-edge fields such as quantum communication, LiDAR, dark-matter searches, and high-energy particle detection. Accordingly, this paper provides a systematic review of recent advances in SMSPD research, covering the underlying physical mechanisms, material systems, geometrical design, readout circuitry, and application domains. Firstly, this review elaborates on the photon response mechanism of SMSPDs and clarifies its correlation with vortex dynamics. Secondly, this review categorizes the superconducting materials used for SMSPD fabrication and analyzes the influences of characteristic thin-film parameters on device performance. Furthermore, this work concludes the evolution and optimization strategies of geometrical design and readout circuit schemes for SMSPDs, and presents the current application status. Finally, we offer perspectives on its future development trajectory. This review provides a foundation in physical mechanisms and design guidance for the development of large active area SMSPDs with high efficiency and low dark counts.
We demonstrate a mid-infrared superconducting microstrip single-photon detector (SMSPD) based on a 5 nm thick, 0.92-μm wide, and 50 μm long NbN microbridge. The detection sensitivity is enhanced via He + ion irradiation with a high fluence of 1×10 17 ions/cm 2 . The SMSPD exhibits saturated internal detection efficiency over a broad spectral range from 400 nm to 5 μm at 0.32 K, with a minimum timing jitter of 28 ps (at 1064 nm). The detection current scales with photon energy as α ≈ –0.5, indicating vortex-assisted hotspot formation as the underlying detection mechanism.