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arXiv:2109.07550

Mott-Hubbard phase transition in 2D electron liquid

Igor N. Karnaukhov, Kateryna Levchuk, Igor N. Dubinski

Published Sep 15, 2021• 0 citations
arXivHTMLPDF

Abstract

We study the behavior of fermion liquid defined on hexagonal and triangular lattices with short-range repulsion at half filling. In strong coupling limit the Mott-Hubbard phase state is present, the main peculiarity of insulator state is a doubled cell of the lattices. In the insulator state at half filling fermions with momenta $k$ and $k+π$ are coupled via the effective $λ$-field, the gap in the spectrum of quasi-particle excitations opens and the Mott phase transition is occured at a critical value of the one-site Hubbard repulsion~$U_c$. $U_c=3.904$ and $U_c=5.125$ are calculated values for hexagonal and triangular lattices, respectively. Depending on the magnitude of the short-range repulsion, the gap in the spectrum and the energy of the ground state are calculated. The proposed approach is universal; it is implemented for an arbitrary dimension and symmetry of the lattice for fermions models with short-range repulsion.

DOI
10.48550/arxiv.2109.07550

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We study the behavior of fermion liquid defined on hexagonal and triangular lattices with short-range repulsion at half filling. In strong coupling limit the Mott-Hubbard phase state is present, the main peculiarity of insulator state is a doubled cell of the lattices. In the insulator state at half filling fermions with momenta kkk and k+πk+πk+π are coupled via the effective λλλ-field, the gap in the spectrum of quasi-particle excitations opens and the Mott phase transition is occured at a critical value of the one-site Hubbard repulsion~UcU_cUc​. Uc=3.904U_c=3.904Uc​=3.904 and Uc=5.125U_c=5.125Uc​=5.125 are calculated values for hexagonal and triangular lattices, respectively. Depending on the magnitude of the short-range repulsion, the gap in the spectrum and the energy of the ground state are calculated. The proposed approach is universal; it is implemented for an arbitrary dimension and symmetry of the lattice for fermions models with short-range repulsion.
Within the framework of a mean-field approach the Mott-Hubbard phase transition is considered in the Hubbard and Falicov-Kimball models for half-filled occupation. It is shown that a static Z_2-field forms an insulator state on the lattice with a double cell, its strength is determined by the Hubbard interaction. An uniform configuration of the Z_2-field corresponds to a gapless spin liquid state, the configuration, at which the lattice with a double cell is formed, corresponds to a gapped fermion liquid, fermions move in this field. Due to the presence of a static field in an insulator state, a formation of a gapped electron liquid is similar to the gapless Majorana spin liquid in Kitaev's model [1]. A gap in the spectrum is calculated depending on the magnitude of the Hubbard interaction for the chain, square and cubic lattices. The proposed approach allows us to describe the Mott-Hubbard phase transition and the insulator state within the same formalism for an arbitrary dimension for different models.
Abstract We present a T = 0 K renormalization group (RG) phase diagram for the electronic Hubbard model in two dimensions on the square lattice at half filling. The RG procedure treats quantum fluctuations in the single particle occupation number nonperturbatively via the unitarily decoupling of one electronic state at every RG step. The resulting phase diagram thus possesses the quantum fluctuation energy scale (ω) as one of its axes. A relation is derived between ω and the effective temperature scale upto which gapless, as well as emergent gapped phases can be obtained. We find that the normal and insulating phases of the half-filled Hubbard model correspond, for any on-site repulsion, to a marginal Fermi liquid normal phase and a topologically-ordered gapped Mott insulating liquid respectively. The marginal Fermi liquid is found to arise from singular forward scattering in directions normal to the nested Fermi surface, while singular backscattering events lead to Mott liquid state. The transition between these two phases involves passage through a pseudogapped phase bookended by Fermi surface topology-changing Lifshitz transitions. The pseudogap phase is observed to arise from the electronic differentiation encoded within the nested Fermi surface, and involves the gradual gapping of the Fermi surface from antinodes to nodes via charge and spin excitations that are mutually entangled. We obtain effective Hamiltonians for various phases, as well as wavefunctions for the low-energy many-body eigenstates of the Mott liquid. Benchmarking of the ground-state energy per particle and the double-occupancy fraction for the Mott liquid against existing numerical results yields excellent agreement. Presence of a Néel ordering symmetry-breaking perturbation in the RG leads to an antiferromagnetic spin-ordered charge insulating Mott state. Our results thus offer novel insights on a variety of aspects of the Mott–Hubbard problem, and can be extended to the doped system.
Abstract We consider the extended Hubbard model on a two-dimensional square lattice at half-filling. The model is investigated using the strong coupling diagram technique. We sum infinite series of ladder diagrams allowing for full-scale charge and spin fluctuations and the actual short-range antiferromagnetic order for nonzero temperatures. In agreement with earlier results, we find the first-order phase transition in the charge subsystem occurring at v = v c ≳ U/4 with v and U the intersite and on-site Coulomb repulsion constants. The transition reveals itself in an abrupt sign change of a sharp maximum in the zero-frequency charge susceptibility at the corner of the Brillouin. States arising at the transition have alternating deviations of electron occupations from the mean value on neighboring sites. Due to fluctuations, these alternating occupation deviations have short-range order. For the considered parameters, such behavior is found for U ≲ 5t with t the hopping constant. For the insulating case U ≳ 6t, in which the transition is not observed, we find a continuous growth of the Mott gap with v. The evolution of the electron density of states with increasing v is also considered.
Employing the projective formalism of determinant quantum Monte Carlo (DQMC) simulations, we meticulously explore the ground-state phase diagram and critical behavior of the half-filled Hubbard model on a square-hexagon-octagon (SHO) lattice. This lattice, a two-dimensional (2D) structure comprising squares, hexagons, and octagons, is representative of the biphenylene network (BPN). Our findings reveal an intriguing ground-state phase diagram, featuring an antiferromagnetic (AFM) Mott insulating phase enveloped by three valence-bond-solid-like (VBS-like) insulating phases. Analyzing the single-particle gap, spin gap, and single-particle spectral function, we observe that the metallic state in the noninteracting case becomes unstable under the influence of Hubbard UUU. This interaction drives the system into a hexagon insulating phase before transitioning into an AFM Mott insulating phase. To quantify the critical exponents, we use finite-size scaling techniques. The critical exponents of quantum critical points between the AFM Mott insulating phase and two insulating phases, plaquette insulator, and ethylene insulator, closely align with the 3D O(3) universality class. However, the critical exponents of quantum critical points between the hexagon insulating phase and the AFM Mott insulating phase deviate from the 3D O(3) universality class. This deviation can be attributed to the coupling effect between the fluctuations of magnetic order parameters and very low-energy fermionic excitations. Our comprehensive study not only advances the understanding of correlation effects on the SHO lattice but also sheds light on the less-explored critical exponents in a weakly insulating quantum critical point.
The Hubbard-Holstein model describes fermions on a discrete lattice, with on-site repulsion between fermions and a coupling to phonons that are localized on sites. Generally, at half-filling, increasing the coupling ggg to the phonons drives the system towards a Peierls charge density wave state, whereas increasing the electron-electron interaction UUU drives the fermions into a Mott antiferromagnet. At low ggg and UUU, or when doped, the system is metallic. In one dimension, using quantum Monte Carlo simulations, we study the case where fermions have a long-range coupling to phonons, with characteristic range $\ensuremath{\xi}$, interpolating between the Holstein and Fr\"ohlich limits. Without electron-electron interaction, the fermions adopt a Peierls state when the coupling to the phonons is strong enough. This state is destabilized by a small coupling range $\ensuremath{\xi}$ and leads to a collapse of the fermions, and, consequently, phase separation. Increasing interaction UUU will drive any of these three phases (metallic, Peierls, phase separation) into a Mott insulator phase. The phase separation region is once again present in the $U\ensuremath{\ne}0$ case, even for small values of the coupling range.
Phase transitions in the Hubbard model and ionic Hubbard model at half-filling on the honeycomb lattice are investigated in the strong-coupling perturbation theory which corresponds to an expansion in powers of the hopping ttt around the atomic limit. Within this formulation we find analytic expressions for the single-particle spectrum, whereby the calculation of the insulating gap is reduced to a simple root finding problem. This enables high-precision determination of the insulating gap that does not require any extrapolation procedure. The critical value of Mott transition on the honeycomb lattice is obtained to be ${U}_{c}\ensuremath{\approx}2.38t$. Studying the ionic Hubbard model at the lowest order, we find two insulating states, one with Mott character at large UUU and another with single-particle gap character at large ionic potential $\mathrm{\ensuremath{\Delta}}$. The present approach gives a critical gapless state at $U=2\mathrm{\ensuremath{\Delta}}$ at lowest order. By systematically improving on the perturbation expansion, the density of states around this critical gapless phase reduces.