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arXiv:2401.00258 · Physical review. B./Physical review. B

Phase diagram and critical behavior of the Hubbard model on the square-hexagon-octagon lattice

Xinwei Jia, Dao‐Xin Yao, Han-Qing Wu

Published Apr 8, 2024• 3 citations
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Abstract

Employing the projective formalism of determinant quantum Monte Carlo (DQMC) simulations, we meticulously explore the ground-state phase diagram and critical behavior of the half-filled Hubbard model on a square-hexagon-octagon (SHO) lattice. This lattice, a two-dimensional (2D) structure comprising squares, hexagons, and octagons, is representative of the biphenylene network (BPN). Our findings reveal an intriguing ground-state phase diagram, featuring an antiferromagnetic (AFM) Mott insulating phase enveloped by three valence-bond-solid-like (VBS-like) insulating phases. Analyzing the single-particle gap, spin gap, and single-particle spectral function, we observe that the metallic state in the noninteracting case becomes unstable under the influence of Hubbard $U$. This interaction drives the system into a hexagon insulating phase before transitioning into an AFM Mott insulating phase. To quantify the critical exponents, we use finite-size scaling techniques. The critical exponents of quantum critical points between the AFM Mott insulating phase and two insulating phases, plaquette insulator, and ethylene insulator, closely align with the 3D O(3) universality class. However, the critical exponents of quantum critical points between the hexagon insulating phase and the AFM Mott insulating phase deviate from the 3D O(3) universality class. This deviation can be attributed to the coupling effect between the fluctuations of magnetic order parameters and very low-energy fermionic excitations. Our comprehensive study not only advances the understanding of correlation effects on the SHO lattice but also sheds light on the less-explored critical exponents in a weakly insulating quantum critical point.

DOI
10.1103/physrevb.109.155122

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Employing the projective formalism of determinant quantum Monte Carlo (DQMC) simulations, we meticulously explore the ground-state phase diagram and critical behavior of the half-filled Hubbard model on a square-hexagon-octagon (SHO) lattice. This lattice, a two-dimensional (2D) structure comprising squares, hexagons, and octagons, is representative of the biphenylene network (BPN). Our findings reveal an intriguing ground-state phase diagram, featuring an antiferromagnetic (AFM) Mott insulating phase enveloped by three valence-bond-solid-like (VBS-like) insulating phases. Analyzing the single-particle gap, spin gap, and single-particle spectral function, we observe that the metallic state in the noninteracting case becomes unstable under the influence of Hubbard UUU. This interaction drives the system into a hexagon insulating phase before transitioning into an AFM Mott insulating phase. To quantify the critical exponents, we use finite-size scaling techniques. The critical exponents of quantum critical points between the AFM Mott insulating phase and two insulating phases, plaquette insulator, and ethylene insulator, closely align with the 3D O(3) universality class. However, the critical exponents of quantum critical points between the hexagon insulating phase and the AFM Mott insulating phase deviate from the 3D O(3) universality class. This deviation can be attributed to the coupling effect between the fluctuations of magnetic order parameters and very low-energy fermionic excitations. Our comprehensive study not only advances the understanding of correlation effects on the SHO lattice but also sheds light on the less-explored critical exponents in a weakly insulating quantum critical point.
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Employing a combination of functional renormalization group calculations and projective determinantal quantum Monte Carlo simulations, we examine the Hubbard model on the square lattice bilayer at half filling. From this combined analysis, we obtain a comprehensive account of the ground-state phase diagram with respect to the extent of the system's metallic and (antiferromagnetically ordered) Mott-insulating as well as band-insulating regions. By means of an unbiased functional renormalization group approach, we exhibit the antiferromagnetic Mott-insulating state as the relevant instability of the free metallic state, induced by any weak finite on-site repulsion. Upon performing a careful analysis of the quantum Monte Carlo data, we resolve the difficulty of identifying this antiferromagnetic ground state for finite interlayer hopping in the weak-coupling regime, where nonmonotonic finite-size corrections are shown to relate to the two-sheeted Fermi surface structure of the metallic phase. On the other hand, quantum Monte Carlo simulations are well suited to identify the transition between the Mott-insulating phase and the band insulator in the intermediate-to-strong coupling regime. Here, we compare our numerical findings to indications for the transition region obtained from the functional renormalization group procedure.
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