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arXiv:2012.15804 · Physical review. B./Physical review. B

Berry phase induced entanglement of hole-spin qubits in a microwave cavity

Marcin M. Wysokiński, Marcin Płodzień, Mircea Trif

Published Jul 8, 2021• 3 citations
arXivHTMLPDF

Abstract

Hole spins localized in semiconductor structures, such as quantum dots or defects, serve in the realization of efficient gate-tunable solid-state quantum bits. Here, we study two electrically driven spin-$3/2$ holes coupled to the electromagnetic field of a microwave cavity. We show that the interplay between the non-Abelian Berry phases generated by local time-dependent electrical fields and the shared cavity photons allows for fast manipulation, detection, and long-range entanglement of the hole-spin qubits in the absence of any external magnetic field. Owing to its geometrical structure, such a scheme is more robust against external noises than conventional hole-spin qubit implementations. These results suggest that hole spins are favorable qubits for scalable quantum computing by purely electrical means.

DOI
10.1103/physrevb.104.l041402

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Hole spins localized in semiconductor structures, such as quantum dots or defects, serve in the realization of efficient gate-tunable solid-state quantum bits. Here, we study two electrically driven spin-3/23/23/2 holes coupled to the electromagnetic field of a microwave cavity. We show that the interplay between the non-Abelian Berry phases generated by local time-dependent electrical fields and the shared cavity photons allows for fast manipulation, detection, and long-range entanglement of the hole-spin qubits in the absence of any external magnetic field. Owing to its geometrical structure, such a scheme is more robust against external noises than conventional hole-spin qubit implementations. These results suggest that hole spins are favorable qubits for scalable quantum computing by purely electrical means.
We consider a pair of quantum dot-based spin qubits that interact via microwave photons in a superconducting cavity and that are also parametrically driven by separate external electric fields. For this system, we formulate a model for spin qubit entanglement in the presence of mutually off-resonant qubit and cavity frequencies. We show that the sidebands generated via the driving fields enable highly tunable qubit-qubit entanglement using only ac control and without requiring the qubit and cavity frequencies to be tuned into simultaneous resonance. The model we derive can be mapped to a variety of qubit types, including detuning-driven one-electron spin qubits in double quantum dots and three-electron resonant exchange qubits in triple quantum dots. The high degree of nonlinearity inherent in spin qubits renders these systems particularly favorable for parametric drive-activated entanglement. We determine multiple common resonance conditions for the two driven qubits and the cavity and identify experimentally relevant parameter regimes that enable the implementation of entangling gates with suppressed sensitivity to cavity photon occupation and decay. The parametrically driven sideband resonance approach that we describe provides a promising route toward scalability and modularity in spin-based quantum information processing through drive-enabled tunability that can also be implemented in micromagnet-free electron and hole systems for spin-photon coupling. Published by the American Physical Society 2024
Hole spin qubits are frontrunner platforms for scalable quantum computers because of their large spin-orbit interaction that enables ultrafast all-electric qubit control at low power. The fastest spin qubits to date are defined in long quantum dots with two tight confinement directions, when the driving field is aligned to the smooth direction. However, in these systems the lifetime of the qubit is strongly limited by charge noise, a major issue in hole qubits. We propose here a different, scalable qubit design, compatible with planar CMOS technology, where the hole is confined in a curved germanium quantum well surrounded by silicon. This design takes full advantage of the strong spin-orbit interaction of holes, and at the same time suppresses charge noise in a wide range of configurations, enabling highly coherent, ultrafast qubit gates. While here we focus on a Si\mathrm{Si}Si/Ge\mathrm{Ge}Ge/Si\mathrm{Si}Si curved quantum well, our design is also applicable to different semiconductors. These devices allow for ultrafast operations even in short quantum dots by a transversal electric field. This additional driving mechanism relaxes the demanding design constraints, and offers a way to reliably interface spin qubits in a single quantum dot to microwave photons. By considering state-of-the-art high-impedance resonators and realistic qubit designs, we estimate interaction strengths of a few hundreds of megahertz, largely exceeding the decay rate of spins and photons. Reaching such a strong coupling regime in hole spin qubits will be a significant step towards high-fidelity entangling operations between distant qubits, as well as fast single-shot readout, and could pave the way towards the implementation of a large-scale semiconducting quantum processor.
Hole spins in silicon quantum dots are a promising platform for quantum computing due to their strong intrinsic spin-orbit coupling (SOC), which enables fast, all-electrical control. However, this coupling also increases their susceptibility to charge noise, thereby limiting coherence times. Moreover, holes in silicon are also affected by hyperfine interactions with residual nuclear spins in the silicon substrate, introducing a non-negligible source of low-frequency noise. Here, we implement a phase-modulated concatenated continuous driving (CCD) technique for hole spin qubits to suppress low-frequency noise through microwave phase modulation. This approach stabilizes Rabi oscillations and extends the oscillation decay time compared to the conventional method. Furthermore, by defining a qubit in the CCD frame, we achieve coherent control while simultaneously protecting the qubit from noise, confirming coherence protection during gate operations. These results demonstrate a viable route toward noise-robust hole spin qubits.
We propose a setup for universal and electrically controlled quantum information processing with hole spins in Ge/Si core/shell nanowire quantum dots (NW QDs). Single-qubit gates can be driven through electric-dipole-induced spin resonance, with spin-flip times shorter than 100 ps. Long-distance qubit-qubit coupling can be mediated by the cavity electric field of a superconducting transmission line resonator, where we show that operation times below 20 ns seem feasible for the entangling iSWAP\sqrt{i\text{SWAP}}iSWAP​ gate. The absence of Dresselhaus spin-orbit interaction (SOI) and the presence of an unusually strong Rashba-type SOI enable precise control over the transverse qubit coupling via an externally applied, perpendicular electric field. The latter serves as an on-off switch for quantum gates and also provides control over the ggg factor, so single- and two-qubit gates can be operated independently. Remarkably, we find that idle qubits are insensitive to charge noise and phonons, and we discuss strategies for enhancing noise-limited gate fidelities.
Spin qubits in silicon and germanium quantum dots are promising platforms for quantum computing, but entangling spin qubits over micrometer distances remains a critical challenge. Current prototypical architectures maximize transversal interactions between qubits and microwave resonators, where the spin state is flipped by nearly resonant photons. However, these interactions cause backaction on the qubit that yields unavoidable residual qubit-qubit couplings and significantly affects the gate fidelity. Strikingly, residual couplings vanish when spin-photon interactions are longitudinal and photons couple to the phase of the qubit. We show that large and tunable spin-photon interactions emerge naturally in state-of-the-art hole spin qubits and that they change from transversal to longitudinal depending on the magnetic field direction. We propose ways to electrically control and measure these interactions, as well as realistic protocols to implement fast high-fidelity two-qubit entangling gates. These protocols work also at high temperatures, paving the way toward the implementation of large-scale quantum processors.
Hole spin qubits in semiconductors are in the midst of revolutionizing solid-state quantum information processing, and different setups are being investigated to further improve their quality. In this work, the authors demonstrate that the interplay between the spin-orbit interaction and site-dependent ggg tensors of holes confined in a double quantum dot enables all-electrical orthogonal two-axis control of hole singlet-triplet qubits. Remarkably, leakage errors can be strongly suppressed at the same time by choosing an optimal direction of the external magnetic field.