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arXiv:2203.17163 · Physical Review Letters

Fully Tunable Longitudinal Spin-Photon Interactions in Si and Ge Quantum Dots

Stefano Bosco, Pasquale Scarlino, Jelena Klinovaja, Daniel Loss

Published Aug 2, 2022• 55 citations
arXivHTMLPDF

Abstract

Spin qubits in silicon and germanium quantum dots are promising platforms for quantum computing, but entangling spin qubits over micrometer distances remains a critical challenge. Current prototypical architectures maximize transversal interactions between qubits and microwave resonators, where the spin state is flipped by nearly resonant photons. However, these interactions cause backaction on the qubit that yields unavoidable residual qubit-qubit couplings and significantly affects the gate fidelity. Strikingly, residual couplings vanish when spin-photon interactions are longitudinal and photons couple to the phase of the qubit. We show that large and tunable spin-photon interactions emerge naturally in state-of-the-art hole spin qubits and that they change from transversal to longitudinal depending on the magnetic field direction. We propose ways to electrically control and measure these interactions, as well as realistic protocols to implement fast high-fidelity two-qubit entangling gates. These protocols work also at high temperatures, paving the way toward the implementation of large-scale quantum processors.

DOI
10.1103/physrevlett.129.066801

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Spin qubits in silicon and germanium quantum dots are promising platforms for quantum computing, but entangling spin qubits over micrometer distances remains a critical challenge. Current prototypical architectures maximize transversal interactions between qubits and microwave resonators, where the spin state is flipped by nearly resonant photons. However, these interactions cause backaction on the qubit that yields unavoidable residual qubit-qubit couplings and significantly affects the gate fidelity. Strikingly, residual couplings vanish when spin-photon interactions are longitudinal and photons couple to the phase of the qubit. We show that large and tunable spin-photon interactions emerge naturally in state-of-the-art hole spin qubits and that they change from transversal to longitudinal depending on the magnetic field direction. We propose ways to electrically control and measure these interactions, as well as realistic protocols to implement fast high-fidelity two-qubit entangling gates. These protocols work also at high temperatures, paving the way toward the implementation of large-scale quantum processors.
Abstract Spin qubits in semiconductor quantum dots offer a gate-tunable platform for quantum information processing. While two-qubit interactions are typically realized through exchange coupling between neighboring spins, coupling spin qubits to photons via hybrid spin-circuit QED (cQED) devices enables long-range interactions and integration with other cQED platforms. Here, we investigate hole spin–photon coupling in compact single quantum dot setups. By incorporating ubiquitous strain inhomogeneities to our theory, we identify three main spin–photon coupling channels: a vector-potential-spin–orbit geometric mechanism–dominant for vertical magnetic fields–, an inhomogeneous Rashba term generalizing previous spin–orbit field models, and strain-induced g -tensor terms–most relevant for in-plane fields. Comparing Si, unstrained (relaxed) Ge, and biaxially strained Ge wells, we find that Si and unstrained Ge provide optimal coupling strengths (tens of MHz) thanks to their reduced heavy-hole, light-hole splitting. We demonstrate efficient switching of the spin–photon coupling while preserving sweet spot conditions by operating with an in-plane magnetic field. Finally, we evaluate quantum state transfer and two-qubit gate protocols, achieving ≳ 99 % fidelity for state transfer and > 90 % for two-qubit gates with realistic coherence times, establishing single-dot hole spins as a viable platform for compact spin-cQED architectures and highlighting unstrained Ge as a promising candidate for spin–photon interactions.
Hole spin qubits are frontrunner platforms for scalable quantum computers because of their large spin-orbit interaction that enables ultrafast all-electric qubit control at low power. The fastest spin qubits to date are defined in long quantum dots with two tight confinement directions, when the driving field is aligned to the smooth direction. However, in these systems the lifetime of the qubit is strongly limited by charge noise, a major issue in hole qubits. We propose here a different, scalable qubit design, compatible with planar CMOS technology, where the hole is confined in a curved germanium quantum well surrounded by silicon. This design takes full advantage of the strong spin-orbit interaction of holes, and at the same time suppresses charge noise in a wide range of configurations, enabling highly coherent, ultrafast qubit gates. While here we focus on a Si\mathrm{Si}Si/Ge\mathrm{Ge}Ge/Si\mathrm{Si}Si curved quantum well, our design is also applicable to different semiconductors. These devices allow for ultrafast operations even in short quantum dots by a transversal electric field. This additional driving mechanism relaxes the demanding design constraints, and offers a way to reliably interface spin qubits in a single quantum dot to microwave photons. By considering state-of-the-art high-impedance resonators and realistic qubit designs, we estimate interaction strengths of a few hundreds of megahertz, largely exceeding the decay rate of spins and photons. Reaching such a strong coupling regime in hole spin qubits will be a significant step towards high-fidelity entangling operations between distant qubits, as well as fast single-shot readout, and could pave the way towards the implementation of a large-scale semiconducting quantum processor.
Spin qubits in semiconductor quantum dots constitute one of the leading platforms for quantum information processing, combining long coherence times, high-fidelity gate operations, and compatibility with semiconductor industry technologies. In particular, holes confined in planar Ge/SiGe heterostructures have recently emerged as promising qubit candidates owing to their low effective mass, high mobility, low percolation density, absence of valley states, and strong spin-orbit interaction, which enables fast all-electrical spin control. At the same time, spin-orbit interaction also gives rise to a highly anisotropic and electrically tunable gyromagnetic response. Understanding and controlling this response is therefore essential for high-fidelity single- and multi-qubit operations. The realization of scalable quantum processors also requires efficient qubit readout and long-range connectivity. Circuit quantum electrodynamics (cQED), based on the coupling between artificial atoms and microwave photons confined in superconducting resonators, provides a natural framework to address these challenges. However, the implementation of hybrid semiconductor-superconductor devices in planar Ge has so far been hindered by large microwave losses originating from the heterostructure. In this thesis, we demonstrate, for the first time in planar Ge, strong coupling between a hole charge qubit in a double quantum dot and a high-impedance microwave resonator, reaching a cooperativity of C â 100. In addition, we leverage the frequency tunability of the resonator to perform detailed spectroscopy of a multi-level energy spectrum of low-lying states arising from strong Coulomb-correlation effects. To further improve the quality of the hole-photon interface, we investigate the source of microwave losses in different Ge/SiGe heterostructures, identifying defects at the lattice-mismatched Si/Ge interface as the dominant source of resonator losses in reverse-graded heterostructures. To mitigate this limitation, a deep tapered-etching approach is introduced, enabling the fabrication of superconducting resonators directly on etched heterostructures. This method yields internal quality factors exceeding Qint > 10 000 for high-impedance Josephson junction array resonators and Qint > 100 000 for 50 â Nb resonators. Finally, this thesis explores the spin properties of multi-hole quantum dots beyond the conventional single-orbital picture. By reconstructing and electrically tuning the g tensors of holes confined in different orbital states, we show that confinement can substantially modify both their magnitude and orientation. These results open new opportunities for engineering qubit properties through orbital occupation. Furthermore, highly coherent singlet-triplet oscillations are demonstrated in the seven-hole regime, yielding a quality factor of approximately 330 at in-plane magnetic fields as low as 2.5 mT. Together, these results establish a foundation for high-fidelity hole-spin-qubit operation based on g-tensor engineering and for the integration of planar Ge quantum dots with superconducting quantum circuits.
Spin qubits in semiconducting quantum dots are currently limited by slow readout processes, which are orders of magnitude slower than gate operations. In contrast, Andreev spin qubits benefit from fast measurement schemes enabled by the large resonator couplings of superconducting qubits but suffer from reduced coherence during qubit operations. Here, we propose fast and high-fidelity measurement protocols based on an electrically tunable coupling between quantum dot and Andreev spin qubits. In realistic devices, this coupling can be made sufficiently strong to enable high-fidelity readout well below microseconds, potentially enabling mid-circuit measurements. Crucially, the electrical tunability of our coupler permits to switch it off during idle periods, minimizing crosstalk and measurement back-action. Our approach is fully compatible with germanium-based devices and paves the way for scalable quantum computing architectures by leveraging the advantages of heterogeneous qubit implementations.
Electron spin qubits in silicon quantum dots are an attractive candidate for large-scalable quantum computation. An essential step for quantum information processing based on spin qubits is to realize the spatially separated two-qubit gate and entanglement with high fidelity. Here, we consider two spin qubits coupled to a common superconducting resonator in circuit quantum electrodynamics. We investigate the long-range two-qubit iSWAP gate mediated by virtual microwave photons using a Gaussian smoothing pulse. We show that the entangling gate fidelity can reach [Formula: see text] under realistic experimental conditions and analyze the factors limiting gate fidelity. Moreover, we numerically demonstrate the generation of remote Bell entangled states of spin qubits with high fidelity. In addition, this spin–resonator architecture can be used to implement quantum algorithms using our scheme. These results pave the way for quantum information processing with spin qubits.
The interaction of qubits via microwave frequency photons enables long-distance qubit-qubit coupling and facilitates the realization of a large-scale quantum processor. However, qubits based on electron spins in semiconductor quantum dots have proven challenging to couple to microwave photons. In this theoretical work we show that a sizable coupling for a single electron spin is possible via spin-charge hybridization using a magnetic field gradient in a silicon double quantum dot. Based on parameters already shown in recent experiments, we predict optimal working points to achieve a coherent spin-photon coupling, an essential ingredient for the generation of long-range entanglement. Furthermore, we employ input-output theory to identify observable signatures of spin-photon coupling in the cavity output field, which may provide guidance to the experimental search for strong coupling in such spin-photon systems and opens the way to cavity-based readout of the spin qubit.