We present the first-ever multi-scale dynamical simulation of the temperature-controlled Mott metal-insulator transition in the Hubbard model. By integrating advanced electronic structure method and an efficient Gutzwiller/slave-boson solver into molecular dynamics simulations, we demonstrate that the transformation from a correlated metal to the Mott insulating phase proceeds via the nucleation and growth of the Mott droplets. Moreover, the time evolution of the Mott volume fraction is found to follow a universal transformation kinetics. We show that after an initial incubation period, the early stage of the phase transformation is characterized by a constant nucleation rate and an interface-controlled cluster growth mechanism, consistent with the classical theory developed by Kolmogorov, Johnson, Mehl, and Avrami. This is followed by a novel intermediate stage of accelerated phase transformation that is significantly different from the prediction of the classical theory. Moreover, the cluster-growth dynamics in this intermediate stage exhibits an unexpected avalanche behavior, similar to the Barkhausen noise in magnetization dynamics, even in the absence of quenched disorder. Detailed structural characterization further uncovers a universal correlation function for the transient mixed-phase states of the Mott transition. We also discuss implications of our findings for spatially resolved measurements of Mott metal-insulator transition obtained in recent nano-imaging experiments.
We present the first-ever multi-scale dynamical simulation of the temperature-controlled Mott metal-insulator transition in the Hubbard model. By integrating advanced electronic structure method and an efficient Gutzwiller/slave-boson solver into molecular dynamics simulations, we demonstrate that the transformation from a correlated metal to the Mott insulating phase proceeds via the nucleation and growth of the Mott droplets. Moreover, the time evolution of the Mott volume fraction is found to follow a universal transformation kinetics. We show that after an initial incubation period, the early stage of the phase transformation is characterized by a constant nucleation rate and an interface-controlled cluster growth mechanism, consistent with the classical theory developed by Kolmogorov, Johnson, Mehl, and Avrami. This is followed by a novel intermediate stage of accelerated phase transformation that is significantly different from the prediction of the classical theory. Moreover, the cluster-growth dynamics in this intermediate stage exhibits an unexpected avalanche behavior, similar to the Barkhausen noise in magnetization dynamics, even in the absence of quenched disorder. Detailed structural characterization further uncovers a universal correlation function for the transient mixed-phase states of the Mott transition. We also discuss implications of our findings for spatially resolved measurements of Mott metal-insulator transition obtained in recent nano-imaging experiments.
We present a new quantum molecular dynamics (MD) method where the electronic structure and atomic forces are solved by a real-space dynamical mean-field theory (DMFT). Contrary to most quantum MD methods that are based on effective single-particle wave functions, the DMFT approach is able to describe correlation-induced Mott metal-insulator transitions and the associated incoherent electronic excitations in an atomic liquid. We apply the DMFT-MD method to study Mott transitions in an atomic liquid model which can be viewed as the liquid-state generalization of the Hubbard model. The half-filled Hubbard liquids also provide a minimum model for alkali fluid metals. Our simulations uncover two distinct types of Mott transition depending on the atomic bonding and short-range structures in the electronically delocalized phase. In the first scenario where atoms tend to form dimers, increasing the Hubbard repulsion gives rise to a transition from a molecular insulator to an atomic insulator with a small window of enhanced metallicity in the vicinity of the localization transition. On the other hand, for Hubbard liquids with atoms forming large conducting clusters, the localization of electrons leads to the fragmentation of clusters and is intimately related to the liquid-gas transition of atoms. Implications of our results for metal-insulator transitions in fluid alkali metals are discussed.
Quantum materials exhibit a rich dynamic of physical parameters, which, when combined, can lead to entirely different behaviors. These parameters constantly compete with each other, with the most influential parameters determining the state of the system. For example, in the case of metal–insulator transitions, electron–electron interactions compete with the kinetic energy of the electrons and disorder. Understanding these complex dynamics is crucial for both fundamental physics and the development of novel technological applications, particularly given the role of disorder in tuning critical temperatures, a property with significant potential benefit in the fabrication of new devices where temperature requirements are still the bottleneck. In this article, properties of the Mott metal–insulator transition within disordered electron systems are explored using the disordered Hubbard model, the simplest Hamiltonian for capturing the metal–insulator transition. The model solutions are obtained using the self-consistent statistical dynamical mean-field theory (statDMFT). statDMFT incorporates local electronic correlation effects while allowing for Anderson localization due to disorder.
At the Mott transition, electron-electron interaction changes a metal, in which electrons are itinerant, to an insulator, in which electrons are localized. This phenomenon is central to quantum materials. Here we contribute to its understanding by studying the two-dimensional Hubbard model at finite temperature with plaquette cellular dynamical mean-field theory. We provide an exhaustive thermodynamic description of the correlation-driven Mott transition of the half-filled model by calculating pressure, charge compressibility, entropy, kinetic energy, potential energy, and free energy across the first-order Mott transition and its high-temperature crossover (Widom line). The entropy is extracted from the Gibbs-Duhem relation and shows complex behavior near the transition, marked by discontinuous jumps at the first-order boundary, singular behavior at the Mott endpoint, and inflections marking sharp variations in the supercritical region. The free energy allows us to identify the thermodynamic phase boundary, to discuss phases stability and metastability, and to touch upon nucleation and spinodal decomposition mechanisms for the transition. We complement this thermodynamic description of the Mott transition by an information-theoretic description. We achieve this by calculating the local entropy, which is a measure of entanglement, and the single-site total mutual information, which quantifies quantum and classical correlations. These information-theoretic measures exhibit characteristic behaviors that allow us to identify the first-order coexistence regions, the Mott critical endpoint and the crossovers along the Widom line in the supercritical region.
We address the nature of the Mott transition in the Hubbard model at half-filling using cluster dynamical mean field theory (DMFT). We compare cluster-DMFT results with those of single-site DMFT. We show that inclusion of the short-range correlations on top of the on-site correlations does not change the order of the transition between the paramagnetic metal and the paramagnetic Mott insulator, which remains first order. However, the short range correlations reduce substantially the critical U and modify the shape of the transition lines. Moreover, they lead to very different physical properties of the metallic and insulating phases near the transition point. Approaching the transition from the metallic side, we find an anomalous metallic state with very low coherence scale. The insulating state is characterized by the narrow Mott gap with pronounced peaks at the gap edge.
Abstract: The metal–insulator transition (MIT) constitutes one of the most profound and persistent problems in condensed matter physics, sitting at the intersection of electronic structure theory, many-body physics, and emergent quantum phenomena. Conventional band theory, which successfully classifies materials as metals or insulators according to the filling of their electronic bands, fails dramatically when confronted with a class of compounds transition metal oxides chief among them that ought to be metallic by band-counting arguments yet are robustly insulating in the laboratory. The resolution of this paradox required abandoning the independent-electron picture entirely and recognizing that strong Coulomb repulsion between electrons can, by itself, drive localization. This insight, formalized by Mott and later distilled into the Hubbard model, established correlation-driven insulation as a phenomenon distinct from band insulation. The present paper offers a theoretical exploration of the MIT problem, tracing its conceptual development from the Mott criterion through the Hubbard Hamiltonian, the Brinkman–Rice scenario of quasiparticle mass divergence, and the watershed development of dynamical mean-field theory (DMFT), which rendered the Mott transition quantitatively tractable for the first time. We argue that the competition between the electronic bandwidth and the on-site interaction encoded in the ratio U/W provides the unifying organizing principle for the field. Building toward the modern frontier, we examine how the Mott transition connects to quantum phase transitions and quantum criticality, where zero-temperature instabilities governed by quantum rather than thermal fluctuations produce non-Fermi-liquid behavior and anomalous scaling. Case studies of vanadium oxides, rare-earth nickelates, and doped cuprates illustrate the diversity and subtlety of real correlated materials. We conclude that the MIT remains a central and unresolved problem whose continued study is increasingly entangled with the development of quantum materials and quantum technologies. Keywords: Metal–Insulator Transition; Mott Insulator; Strongly Correlated Electrons; Hubbard Model; DMFT; Quantum Criticality; Quantum Materials; Condensed Matter Physics
Introduction In this chapter we study metal–insulator transitions which occur due to correlations between the charge carriers. This quantum phase transitions results from the competition between kinetic energy and Coulomb repulsion where the latter has the tendency to localise the electrons. The simplest model which describes this competition is the one-band Hubbard model with its two energy scales, the bandwidth W and the Coulomb repulsion U between electrons of opposite spins on the same site. For a fixed density of electrons, n = 1; as the ratio U/W increases, we expect to find a zero-temperature phase transition from a metallic state to an insulator where the electrons are frozen at the lattice sites. The method employed here to investigate this transition is the Gutzwiller approach (Gutzwiller, 1965). This is a variational method which played an important role in providing a framework for the ideas of Mott on the problem of the metal–insulator transition (Mott, 1974). On the metallic side of the transition, this approach describes a metal with renormalised Fermi liquid parameters, essentially with enhanced effective mass and uniform susceptibility. This is the so-called highly correlated electron gas (Brinkman and Rice, 1970) for which the metal oxide V 2 O 3 is the prototype system. In the insulating side, Gutzwiller's approximation yields a noninteracting system of localised electrons. This insulating phase is incompressible , i.e. has zero compressibility and infinite zero temperature susceptibility. The latter is not a consequence of interactions but simply due to the divergence of the Curie susceptibility, χ ∝ 1 /T , of non-interacting moments at T = 0. Then, in Gutzwiller's approach the transition is from a paramagnetic metal to a paramagnetic insulator. We will continue using the designation Mott transition to describe this type of phase transition where the insulating phase has no long-range magnetic order. In real systems, most frequently, localisation due to interactions is accompanied by the appearance of antiferromagnetic order.