We present a new quantum molecular dynamics (MD) method where the electronic structure and atomic forces are solved by a real-space dynamical mean-field theory (DMFT). Contrary to most quantum MD methods that are based on effective single-particle wave functions, the DMFT approach is able to describe correlation-induced Mott metal-insulator transitions and the associated incoherent electronic excitations in an atomic liquid. We apply the DMFT-MD method to study Mott transitions in an atomic liquid model which can be viewed as the liquid-state generalization of the Hubbard model. The half-filled Hubbard liquids also provide a minimum model for alkali fluid metals. Our simulations uncover two distinct types of Mott transition depending on the atomic bonding and short-range structures in the electronically delocalized phase. In the first scenario where atoms tend to form dimers, increasing the Hubbard repulsion gives rise to a transition from a molecular insulator to an atomic insulator with a small window of enhanced metallicity in the vicinity of the localization transition. On the other hand, for Hubbard liquids with atoms forming large conducting clusters, the localization of electrons leads to the fragmentation of clusters and is intimately related to the liquid-gas transition of atoms. Implications of our results for metal-insulator transitions in fluid alkali metals are discussed.
We present a new quantum molecular dynamics (MD) method where the electronic structure and atomic forces are solved by a real-space dynamical mean-field theory (DMFT). Contrary to most quantum MD methods that are based on effective single-particle wave functions, the DMFT approach is able to describe correlation-induced Mott metal-insulator transitions and the associated incoherent electronic excitations in an atomic liquid. We apply the DMFT-MD method to study Mott transitions in an atomic liquid model which can be viewed as the liquid-state generalization of the Hubbard model. The half-filled Hubbard liquids also provide a minimum model for alkali fluid metals. Our simulations uncover two distinct types of Mott transition depending on the atomic bonding and short-range structures in the electronically delocalized phase. In the first scenario where atoms tend to form dimers, increasing the Hubbard repulsion gives rise to a transition from a molecular insulator to an atomic insulator with a small window of enhanced metallicity in the vicinity of the localization transition. On the other hand, for Hubbard liquids with atoms forming large conducting clusters, the localization of electrons leads to the fragmentation of clusters and is intimately related to the liquid-gas transition of atoms. Implications of our results for metal-insulator transitions in fluid alkali metals are discussed.
We present a formulation of quantum molecular dynamics that includes electron correlation effects via the Gutzwiller method. Our new scheme enables the study of the dynamical behavior of atoms and molecules with strong electron interactions. The Gutzwiller approach goes beyond the conventional mean-field treatment of the intra-atomic electron repulsion and captures crucial correlation effects such as band narrowing and electron localization. We use Gutzwiller quantum molecular dynamics to investigate the Mott transition in the liquid phase of a single-band metal and uncover intriguing structural and transport properties of the atoms.
We address the nature of the Mott transition in the Hubbard model at half-filling using cluster dynamical mean field theory (DMFT). We compare cluster-DMFT results with those of single-site DMFT. We show that inclusion of the short-range correlations on top of the on-site correlations does not change the order of the transition between the paramagnetic metal and the paramagnetic Mott insulator, which remains first order. However, the short range correlations reduce substantially the critical U and modify the shape of the transition lines. Moreover, they lead to very different physical properties of the metallic and insulating phases near the transition point. Approaching the transition from the metallic side, we find an anomalous metallic state with very low coherence scale. The insulating state is characterized by the narrow Mott gap with pronounced peaks at the gap edge.
Abstract: The metal–insulator transition (MIT) constitutes one of the most profound and persistent problems in condensed matter physics, sitting at the intersection of electronic structure theory, many-body physics, and emergent quantum phenomena. Conventional band theory, which successfully classifies materials as metals or insulators according to the filling of their electronic bands, fails dramatically when confronted with a class of compounds transition metal oxides chief among them that ought to be metallic by band-counting arguments yet are robustly insulating in the laboratory. The resolution of this paradox required abandoning the independent-electron picture entirely and recognizing that strong Coulomb repulsion between electrons can, by itself, drive localization. This insight, formalized by Mott and later distilled into the Hubbard model, established correlation-driven insulation as a phenomenon distinct from band insulation. The present paper offers a theoretical exploration of the MIT problem, tracing its conceptual development from the Mott criterion through the Hubbard Hamiltonian, the Brinkman–Rice scenario of quasiparticle mass divergence, and the watershed development of dynamical mean-field theory (DMFT), which rendered the Mott transition quantitatively tractable for the first time. We argue that the competition between the electronic bandwidth and the on-site interaction encoded in the ratio U/W provides the unifying organizing principle for the field. Building toward the modern frontier, we examine how the Mott transition connects to quantum phase transitions and quantum criticality, where zero-temperature instabilities governed by quantum rather than thermal fluctuations produce non-Fermi-liquid behavior and anomalous scaling. Case studies of vanadium oxides, rare-earth nickelates, and doped cuprates illustrate the diversity and subtlety of real correlated materials. We conclude that the MIT remains a central and unresolved problem whose continued study is increasingly entangled with the development of quantum materials and quantum technologies. Keywords: Metal–Insulator Transition; Mott Insulator; Strongly Correlated Electrons; Hubbard Model; DMFT; Quantum Criticality; Quantum Materials; Condensed Matter Physics
The DOS, the dynamic (optical) conductivity, and the phase diagram of a strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT + Σ approximation). Strong correlations are taken into account by the DMFT, and disorder is taken into account via an appropriate generalization of the self-consistent theory of localization. The DMFT effective single-impurity problem is solved by a numerical renormalization group (NRG); we consider the three-dimensional system with a semielliptic DOS. The correlated metal, Mott insulator, and correlated Anderson insulator phases are identified via the evolution of the DOS and dynamic conductivity, demonstrating both the Mott-Hubbard and Anderson metal-insulator transition and allowing the construction of the complete zero-temperature phase diagram of the Anderson-Hubbard model. Rather unusual is the possibility of a disorder-induced Mott insulator-to-metal transition.
We studied several aspects of the Mott metal-insulator transition in the disordered case. The model on which we based our analysis is the disordered Hubbard model, which is the simplest model capable of capturing the Mott metal-insulator transition. We investigated this model through statistical dynamical mean-field theory (statDMFT). This theory is a natural extension of dynamical mean-field theory (DMFT), which has been used with relative success in the past several years with the purpose of describing the Mott transition in the clean case. As is the case for the latter theory, statDMFT incorporates the electronic correlation effects only in their local manifestations. Disorder, on the other hand, is treated in such a way as to incorporate Anderson localization effects. With this technique, we analyzed the disordered two-dimensional Mott transition, using the quantum Monte Carlo algorithm to solve the associated single-impurity problems. We found spinodal lines at which the metal and insulator ceased to be metastable. We also studied spatial fluctuations of local quantities, such as self-energy and local Green's function, and showed the appearance of metallic regions within the insulator and vice versa. We carried out an analysis of finite-size effects and showed that, in agreement with the theorems of Imry and Ma [Y. Imry and S. K. Ma, Phys. Rev. Lett. 35, 1399 (1975).], the first-order transition is smeared in the thermodynamic limit. We analyzed transport properties by means of a mapping to a random classical resistor network and calculated both the average current and its distribution across the metal-insulator transition.
The dynamical mean-field theory (DMFT) is employed to study the correlation-driven metal-insulator transition in the semi-infinite Hubbard model at half-filling and zero temperature. We consider the low-index surfaces of the three-dimensional simple-cubic lattice, and systematically vary the model parameters at the very surface, the intralayer and interlayer surface hopping, and the surface Coulomb interaction. Within the DMFT the self-energy functional is assumed to be local. Therewith, the problem is self-consistently mapped onto a set of coupled effective impurity models corresponding to the inequivalent layers parallel to the surface. Assuming that the influence of the high-energy Hubbard bands on the low-energy quasiparticle resonance can be neglected at the critical point, a simplified ``linearized DMFT'' becomes possible. The linearized theory, however, is formally equivalent to the Weiss molecular-field theory for the semi-infinite Ising model. This implies that qualitatively the rich phenomenology of the Landau description of second-order phase transitions at surfaces has a direct analog for the surface Mott transition. Motivated by this formal analogy, we work out the predictions of the linearized DMFT in detail. It is found that under certain circumstances the surface of a Mott insulator can be metallic, while a Mott-insulating surface of a normal metal is not possible. We derive the corresponding phase diagrams, the (mean-field) critical exponents and the critical profiles of the quasiparticle weight. The results are confirmed by a fully numerical evaluation of the DMFT equations using the exact-diagonalization (ED) method. By means of the ED approach, we especially investigate the noncritical parts of the phase diagrams and discuss the U and layer dependence of the quasi-particle weight. For strong modifications of the surface model parameters, the surface low-energy electronic structure dynamically decouples from the bulk.