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arXiv:0803.1324 · Physical Review Letters

Cluster Dynamical Mean Field Theory of the Mott Transition

H. Park, Kristjan Haule, Gabriel Kotliar

Published Oct 30, 2008• 306 citations
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Abstract

We address the nature of the Mott transition in the Hubbard model at half-filling using cluster dynamical mean field theory (DMFT). We compare cluster-DMFT results with those of single-site DMFT. We show that inclusion of the short-range correlations on top of the on-site correlations does not change the order of the transition between the paramagnetic metal and the paramagnetic Mott insulator, which remains first order. However, the short range correlations reduce substantially the critical U and modify the shape of the transition lines. Moreover, they lead to very different physical properties of the metallic and insulating phases near the transition point. Approaching the transition from the metallic side, we find an anomalous metallic state with very low coherence scale. The insulating state is characterized by the narrow Mott gap with pronounced peaks at the gap edge.

DOI
10.1103/physrevlett.101.186403

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We address the nature of the Mott transition in the Hubbard model at half-filling using cluster dynamical mean field theory (DMFT). We compare cluster-DMFT results with those of single-site DMFT. We show that inclusion of the short-range correlations on top of the on-site correlations does not change the order of the transition between the paramagnetic metal and the paramagnetic Mott insulator, which remains first order. However, the short range correlations reduce substantially the critical U and modify the shape of the transition lines. Moreover, they lead to very different physical properties of the metallic and insulating phases near the transition point. Approaching the transition from the metallic side, we find an anomalous metallic state with very low coherence scale. The insulating state is characterized by the narrow Mott gap with pronounced peaks at the gap edge.
To gain insight into the physics of the metal-insulator transition and the effectiveness of cluster dynamical mean field theory (DMFT) we have used 1, 2-, and 4-site dynamical mean field theory to solve a polaron model of electrons coupled to a classical phonon field. The metal to polaronic insulator phase boundary is determined along with electron spectral functions and cluster correlation functions. Pronounced cluster size effects occur in the intermediate coupling region in which the cluster calculation leads to a gap and the single-site approximation does not. Differences in spectra (in particular a sharper band edge in the cluster calculation) persist in the strong-coupling regime. A partial density of states is defined encoding a generalized nesting property of the band structure; variations in this density of states account for differences between the dynamical cluster approximation and the cellular-DMFT implementations of cluster DMFT, as well as for differences in behavior between the single-band models appropriate for cuprates and the multiband models appropriate for manganites. A pole or strong resonance in the self-energy is associated with insulating states; the momentum dependence of the pole is found to distinguish between Slater-like and Mott-like mechanisms for metal-insulator transition. Implications for the theoretical treatment of doped manganites are discussed.
We study the Anderson-Hubbard model to examine the interplay between the disordered potential and the Hubbard interactions. We use the dynamical mean-field theory (DMFT) with an exact diagonalization as an impurity solver to effectively deal with the quantum fluctuations due to the local interactions. In order to characterize the paramagnetic metal-insulator transition in disordered systems, we compute the typical local density of states, as well as the arithmetically-averaged local density of states. Our approach is found to reproduce the characteristic features of the metal-insulator transition in infinite dimensions, such as the existence of the disorder-driven metallic phase for moderate values of disorder strength and interactions, as observed in earlier studies. In two dimensions, the system turns out to exhibit more insulating behavior when we increase the cluster size in the cellular DMFT. The metallic phase, which is induced from weak Mott insulators by the introduction of a disordered potential, is not observed in two dimensions.
Correlated electrons in a binary alloy ${A}_{x}{B}_{1\ensuremath{-}x}$ are investigated within the Hubbard model and dynamical mean-field theory (DMFT). The random energies ${\ensuremath{\epsilon}}_{i}$ have a bimodal probability distribution and an energy separation $\ensuremath{\Delta}.$ We solve the DMFT equations by the numerical renormalization-group method at zero temperature and calculate the spectral density as a function of disorder strength $\ensuremath{\Delta}$ and interaction U at different fillings. For filling factors $\ensuremath{\nu}=x$ or 1+x1+x1+x the lower or upper alloy subband is half filled and the system becomes a Mott insulator at strong interactions, with a correlation gap at the Fermi level. At the metal-insulator transition hysteresis is observed. We also analyze the effective theory in the $\stackrel{\ensuremath{\rightarrow}}{\ensuremath{\Delta}}\ensuremath{\infty}$ limit and find good agreement between analytical and numerical results for the critical interaction Uc{U}_{c}Uc​ at which the metal-insulator transition occurs.
The DOS, the dynamic (optical) conductivity, and the phase diagram of a strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT + Σ approximation). Strong correlations are taken into account by the DMFT, and disorder is taken into account via an appropriate generalization of the self-consistent theory of localization. The DMFT effective single-impurity problem is solved by a numerical renormalization group (NRG); we consider the three-dimensional system with a semielliptic DOS. The correlated metal, Mott insulator, and correlated Anderson insulator phases are identified via the evolution of the DOS and dynamic conductivity, demonstrating both the Mott-Hubbard and Anderson metal-insulator transition and allowing the construction of the complete zero-temperature phase diagram of the Anderson-Hubbard model. Rather unusual is the possibility of a disorder-induced Mott insulator-to-metal transition.
The four-site "DCA" method of including intersite correlations in the dynamical mean-field theory is used to investigate the metal-insulator transition in the Hubbard model. At half-filling a gap-opening transition is found to occur as the interaction strength is increased beyond a critical value. The gapped behavior found in the 4-site DCA approximation is shown to be associated with the onset of strong antiferromagnetic and singlet correlations and the transition is found to be potential energy driven. It is thus more accurately described as a Slater phenomenon (induced by strong short-range order) than as a Mott phenomenon. Doping the gapped phase leads to a non–Fermi-liquid state with a Fermi surface only in the nodal regions and a pseudogap in the antinodal regions at lower dopings x ≲0.15 and to a Fermi-liquid phase at higher dopings.
A powerful diagrammatic impurity solver is shown to permit a systematic study of the doping-driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean-field theory. At small dopings and large interaction strengths, we are able to access low enough temperatures that a reliable extrapolation to temperature T=0T=0T=0 may be performed, and ground state energies of insulating and metallic states may be compared. We find that the T=0T=0T=0 doping-driven transition is of second order and is characterized by an interaction-strength dependent electronic compressibility, which vanishes at the critical interaction strength of the half filled model. Over wide parameter ranges, the compressibility is substantially reduced relative to the noninteracting system. The metal-insulator transition is characterized by the appearance of in-gap states, but these are relevant only for very low dopings of less than 3%.