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Journal of the Korean Physical Society

Single-site and cellular dynamical mean-field theory of the Anderson-Hubbard model

Ara Go, Gun Sang Jeon

Published Mar 1, 2013• 0 citations
Publisher

Abstract

We study the Anderson-Hubbard model to examine the interplay between the disordered potential and the Hubbard interactions. We use the dynamical mean-field theory (DMFT) with an exact diagonalization as an impurity solver to effectively deal with the quantum fluctuations due to the local interactions. In order to characterize the paramagnetic metal-insulator transition in disordered systems, we compute the typical local density of states, as well as the arithmetically-averaged local density of states. Our approach is found to reproduce the characteristic features of the metal-insulator transition in infinite dimensions, such as the existence of the disorder-driven metallic phase for moderate values of disorder strength and interactions, as observed in earlier studies. In two dimensions, the system turns out to exhibit more insulating behavior when we increase the cluster size in the cellular DMFT. The metallic phase, which is induced from weak Mott insulators by the introduction of a disordered potential, is not observed in two dimensions.

DOI
10.3938/jkps.62.775

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We study the Anderson-Hubbard model to examine the interplay between the disordered potential and the Hubbard interactions. We use the dynamical mean-field theory (DMFT) with an exact diagonalization as an impurity solver to effectively deal with the quantum fluctuations due to the local interactions. In order to characterize the paramagnetic metal-insulator transition in disordered systems, we compute the typical local density of states, as well as the arithmetically-averaged local density of states. Our approach is found to reproduce the characteristic features of the metal-insulator transition in infinite dimensions, such as the existence of the disorder-driven metallic phase for moderate values of disorder strength and interactions, as observed in earlier studies. In two dimensions, the system turns out to exhibit more insulating behavior when we increase the cluster size in the cellular DMFT. The metallic phase, which is induced from weak Mott insulators by the introduction of a disordered potential, is not observed in two dimensions.
The DOS, the dynamic (optical) conductivity, and the phase diagram of a strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT + Σ approximation). Strong correlations are taken into account by the DMFT, and disorder is taken into account via an appropriate generalization of the self-consistent theory of localization. The DMFT effective single-impurity problem is solved by a numerical renormalization group (NRG); we consider the three-dimensional system with a semielliptic DOS. The correlated metal, Mott insulator, and correlated Anderson insulator phases are identified via the evolution of the DOS and dynamic conductivity, demonstrating both the Mott-Hubbard and Anderson metal-insulator transition and allowing the construction of the complete zero-temperature phase diagram of the Anderson-Hubbard model. Rather unusual is the possibility of a disorder-induced Mott insulator-to-metal transition.
The density of states, the dynamic (optical) conductivity, and the phase diagram of the paramagnetic two-dimensional Anderson-Hubbard model with strong correlations and disorder are analyzed within the generalized dynamical mean field theory (DMFT + Σ approximation). Strong correlations are accounted by the DMFT, while disorder is taken into account via the appropriate generalization of the self-consistent theory of localization. We consider the two-dimensional system with the rectangular “bare” density of states (DOS). The DMFT effective single-impurity problem is solved by numerical renormalization group (NRG). The “correlated metal,” Mott insulator, and correlated Anderson insulator phases are identified from the evolution of the density of states, optical conductivity, and localization length, demonstrating both Mott-Hubbard and Anderson metal-insulator transitions in two-dimensional systems of finite size, allowing us to construct the complete zero-temperature phase diagram of the paramagnetic Anderson-Hubbard model. The localization length in our approximation is practically independent of the strength of Hubbard correlations. But the divergence of the localization length in a finite-size two-dimensional system at small disorder signifies the existence of an effective Anderson transition.
We derive the disorder vs doping phase diagram of the doped Hubbard model via dynamical mean-field theory combined with typical medium theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven) metal-insulator transitions. We observe a transition from a metal to an Anderson-Mott insulator for increasing disorder strength at all interactions. In the weak correlation regime and rather small doping, the Anderson-Mott insulator displays properties which are similar to the ones found at half filling. In particular, this phase is characterized by the presence of empty sites. If we further increase either the doping or the correlation, however, an Anderson-Mott phase of a different kind arises for sharply weaker disorder strength. This phase occupies the largest part of the phase diagram in the strong-correlation regime and is characterized by the absence of the empty sites.
We study the paramagnetic Anderson-Hubbard model using an extension of dynamical mean field theory (DMFT), known as statistical DMFT, that allows us to treat disorder and strong electronic correlations on equal footing. An approximate nonlocal Green's function is found for individual disorder realizations and then configuration averaged. We apply this method to two-dimensional lattices with up to 1000 sites in the strong disorder limit, where an atomic-limit approximation is made for the self-energy. We investigate the scaling of the inverse participation ratio at quarter- and half-filling, and find a nonmonotonic dependence of the localization length on the interaction strength. For strong disorder, we do not find evidence for an insulator-metal transition, and the disorder potential becomes unscreened near the Mott transition. Furthermore, strong correlations suppress the Altshuler-Aronov density of states anomaly near half-filling.
Abstract We consider Anderson localization in the half-filled Anderson–Hubbard model in the presence of either random on-site interactions or spatially alternating interactions in the lattice. By using dynamical mean field theory with the equation of motion method as an impurity solver, we calculate the arithmetically and geometrically averaged local density of states and derive the equations determining the critical value for the phase transition between metallic, Anderson and Mott insulating phases. The nonmagnetic ground state phase diagrams are constructed numerically. We figure out that the presence of Coulomb disorder drives the system toward the Anderson localized phase that can occur even in the absence of Anderson structural disorder. For the spatially alternating interactions, we find that the metallic region is reduced and the Anderson insulator one is enlarged with increasing interaction modulation. Our obtained results are relevant to current research in ultracold atoms in disordered optical lattices where metal–insulator transition can be observed experimentally by using ultracold atom techniques.
We studied several aspects of the Mott metal-insulator transition in the disordered case. The model on which we based our analysis is the disordered Hubbard model, which is the simplest model capable of capturing the Mott metal-insulator transition. We investigated this model through statistical dynamical mean-field theory (statDMFT). This theory is a natural extension of dynamical mean-field theory (DMFT), which has been used with relative success in the past several years with the purpose of describing the Mott transition in the clean case. As is the case for the latter theory, statDMFT incorporates the electronic correlation effects only in their local manifestations. Disorder, on the other hand, is treated in such a way as to incorporate Anderson localization effects. With this technique, we analyzed the disordered two-dimensional Mott transition, using the quantum Monte Carlo algorithm to solve the associated single-impurity problems. We found spinodal lines at which the metal and insulator ceased to be metastable. We also studied spatial fluctuations of local quantities, such as self-energy and local Green's function, and showed the appearance of metallic regions within the insulator and vice versa. We carried out an analysis of finite-size effects and showed that, in agreement with the theorems of Imry and Ma [Y. Imry and S. K. Ma, Phys. Rev. Lett. 35, 1399 (1975).], the first-order transition is smeared in the thermodynamic limit. We analyzed transport properties by means of a mapping to a random classical resistor network and calculated both the average current and its distribution across the metal-insulator transition.