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arXiv:1807.10409 · Physical review. B./Physical review. B

Thermodynamic and information-theoretic description of the Mott transition in the two-dimensional Hubbard model

C. Walsh, P. Sémon, David Poulin, G. Sordi, A.–M. S. Tremblay

Published Feb 11, 2019• 35 citations
arXivHTMLPDF

Abstract

At the Mott transition, electron-electron interaction changes a metal, in which electrons are itinerant, to an insulator, in which electrons are localized. This phenomenon is central to quantum materials. Here we contribute to its understanding by studying the two-dimensional Hubbard model at finite temperature with plaquette cellular dynamical mean-field theory. We provide an exhaustive thermodynamic description of the correlation-driven Mott transition of the half-filled model by calculating pressure, charge compressibility, entropy, kinetic energy, potential energy, and free energy across the first-order Mott transition and its high-temperature crossover (Widom line). The entropy is extracted from the Gibbs-Duhem relation and shows complex behavior near the transition, marked by discontinuous jumps at the first-order boundary, singular behavior at the Mott endpoint, and inflections marking sharp variations in the supercritical region. The free energy allows us to identify the thermodynamic phase boundary, to discuss phases stability and metastability, and to touch upon nucleation and spinodal decomposition mechanisms for the transition. We complement this thermodynamic description of the Mott transition by an information-theoretic description. We achieve this by calculating the local entropy, which is a measure of entanglement, and the single-site total mutual information, which quantifies quantum and classical correlations. These information-theoretic measures exhibit characteristic behaviors that allow us to identify the first-order coexistence regions, the Mott critical endpoint and the crossovers along the Widom line in the supercritical region.

DOI
10.1103/physrevb.99.075122

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At the Mott transition, electron-electron interaction changes a metal, in which electrons are itinerant, to an insulator, in which electrons are localized. This phenomenon is central to quantum materials. Here we contribute to its understanding by studying the two-dimensional Hubbard model at finite temperature with plaquette cellular dynamical mean-field theory. We provide an exhaustive thermodynamic description of the correlation-driven Mott transition of the half-filled model by calculating pressure, charge compressibility, entropy, kinetic energy, potential energy, and free energy across the first-order Mott transition and its high-temperature crossover (Widom line). The entropy is extracted from the Gibbs-Duhem relation and shows complex behavior near the transition, marked by discontinuous jumps at the first-order boundary, singular behavior at the Mott endpoint, and inflections marking sharp variations in the supercritical region. The free energy allows us to identify the thermodynamic phase boundary, to discuss phases stability and metastability, and to touch upon nucleation and spinodal decomposition mechanisms for the transition. We complement this thermodynamic description of the Mott transition by an information-theoretic description. We achieve this by calculating the local entropy, which is a measure of entanglement, and the single-site total mutual information, which quantifies quantum and classical correlations. These information-theoretic measures exhibit characteristic behaviors that allow us to identify the first-order coexistence regions, the Mott critical endpoint and the crossovers along the Widom line in the supercritical region.
Tools of quantum information theory offer a new perspective to characterize phases and phase transitions in interacting many-body quantum systems. The Hubbard model is the archetypal model of such systems and can explain rich phenomena of quantum matter with minimal assumptions. Recent measurements of entanglement-related properties of this model using ultracold atoms in optical lattices hint that entanglement could provide the key to understanding open questions of the doped Hubbard model, including the remarkable properties of the pseudogap phase. These experimental findings call for a theoretical framework and new predictions. Here we approach the doped Hubbard model in two dimensions from the perspective of quantum information theory. We study the local entropy and the total mutual information across the doping-driven Mott transition within plaquette cellular dynamical mean-field theory. We find that upon varying doping these two entanglement-related properties detect the Mott insulating phase, the strongly correlated pseudogap phase, and the metallic phase. Imprinted in the entanglement-related properties we also find the pseudogap to correlated metal first-order transition, its finite temperature critical endpoint, and its supercritical crossovers. Through this footprint we reveal an unexpected interplay of quantum and classical correlations. Our work shows that sharp variation in the entanglement-related properties and not broken symmetry phases characterizes the onset of the pseudogap phase at finite temperature.
Entanglement and information are powerful lenses to probe phases transitions in many-body systems. Motivated by recent cold atom experiments, which are now able to measure the corresponding information-theoretic quantities, we study the Mott transition in the half-filled two-dimensional Hubbard model using cellular dynamical mean-field theory, and focus on two key measures of quantum correlations: entanglement entropy and a measure of total mutual information. We show that they detect the first-order nature of the transition, the universality class of the end point, and the crossover emanating from the end point.
The experimentally established phase diagram of the half-filled Hubbard model features the existence of three distinct finite-temperature regimes, separated by extended crossover regions. A number of crossover lines can be defined to span those regions, which we explore in quantitative detail within the framework of dynamical mean-field theory. Most significantly, the high-temperature crossover between the bad metal and Mott-insulator regimes displays a number of phenomena marking the gradual development of the Mott insulating state. We discuss the quantum critical scaling behavior found in this regime, and propose methods to facilitate its possible experimental observation. We also introduce the concept of quantum Widom lines and present a detailed discussion that highlights its physical meaning when used in the context of quantum-phase transitions.
For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we solve the cellular dynamical mean-field equations for the two-dimensional Hubbard model using a plaquette as the reference quantum impurity model and continuous-time quantum Monte Carlo method as impurity solver. The normal-state phase diagram as a function of interaction strength UUU, temperature TTT, and filling nnn shows that, upon increasing nnn toward the Mott insulator, there is a surface of first-order transition between two metals at nonzero doping. That surface ends at a finite temperature critical line originating at the half-filled Mott critical point. Associated with this transition, there is a maximum in scattering rate as well as thermodynamic signatures. These findings suggest a new scenario for the normal-state phase diagram of the high temperature superconductors. The criticality surmised in these systems can originate not from a T === 0 quantum critical point, nor from the proximity of a long-range ordered phase, but from a low temperature transition between two types of metals at finite doping. The influence of Mott physics therefore extends well beyond half-filling.
We studied several aspects of the Mott metal-insulator transition in the disordered case. The model on which we based our analysis is the disordered Hubbard model, which is the simplest model capable of capturing the Mott metal-insulator transition. We investigated this model through statistical dynamical mean-field theory (statDMFT). This theory is a natural extension of dynamical mean-field theory (DMFT), which has been used with relative success in the past several years with the purpose of describing the Mott transition in the clean case. As is the case for the latter theory, statDMFT incorporates the electronic correlation effects only in their local manifestations. Disorder, on the other hand, is treated in such a way as to incorporate Anderson localization effects. With this technique, we analyzed the disordered two-dimensional Mott transition, using the quantum Monte Carlo algorithm to solve the associated single-impurity problems. We found spinodal lines at which the metal and insulator ceased to be metastable. We also studied spatial fluctuations of local quantities, such as self-energy and local Green's function, and showed the appearance of metallic regions within the insulator and vice versa. We carried out an analysis of finite-size effects and showed that, in agreement with the theorems of Imry and Ma [Y. Imry and S. K. Ma, Phys. Rev. Lett. 35, 1399 (1975).], the first-order transition is smeared in the thermodynamic limit. We analyzed transport properties by means of a mapping to a random classical resistor network and calculated both the average current and its distribution across the metal-insulator transition.
Experiments on layered materials call for a study of the influence of short-range spin correlations on the Mott transition. To this end, we solve the cellular dynamical mean-field equations for the Hubbard model on a plaquette with continuous-time quantum Monte Carlo calculations. The normal-state phase diagram as a function of temperature T, interaction strength U, and filling n reveals that upon increasing n towards the insulator, there is a surface of first-order transition between two metals at nonzero doping. For T above the critical end line there is a maximum in scattering rate.