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arXiv:1811.09170 · Journal of Applied Physics

Engineering nonlinear response of superconducting niobium microstrip resonators via aluminum cladding

Sangil Kwon, Yongchao Tang, Hamid Reza Mohebbi, Olaf W. B. Benningshof, David G. Cory, Guo‐Xing Miao

Published Nov 4, 2019• 2 citations
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Abstract

In this work, we find that Al cladding on Nb microstrip resonators is an efficient way to suppress nonlinear responses induced by local Joule heating, resulting in improved microwave power handling capability. This improvement is likely due to the proximity effect between the Al and the Nb layers. The proximity effect is found to be controllable by tuning the thickness of the Al layer. We show that improving the film quality is also helpful as it enhances the microwave critical current density, but it cannot eliminate the local heating.

DOI
10.1063/1.5121758

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In this work, we find that Al cladding on Nb microstrip resonators is an efficient way to suppress nonlinear responses induced by local Joule heating, resulting in improved microwave power handling capability. This improvement is likely due to the proximity effect between the Al and the Nb layers. The proximity effect is found to be controllable by tuning the thickness of the Al layer. We show that improving the film quality is also helpful as it enhances the microwave critical current density, but it cannot eliminate the local heating.
In this research, we tailor the phonon density of states (DOS) in thin superconducting films to suppress quasiparticle losses. We examine a model system of a proximity-enhanced three-layered Al/Nb/Al heterostructure and show that the local quantized phonon spectrum of the ultrathin Al cladding layers in the heterostructure has a pronounced effect on the superconducting resonator's quality factors. Instead of a monotonic increase of quality factors with decreasing temperatures, we observe the quality factor reaches a maximum at 1.2 K in 5/50/5 nm Al/Nb/Al microstrip resonators, because of a quantized phonon ladder. The phonon DOS may be engineered to enhance the performance of quantum devices.
The quality factor of microstrip line resonators made of 20/50/20 nm Nb/NbN/Nb trilayer films has been calculated as microwave transmission through the cascade of three single layers, and in agreement with experimental data. Each layer is evaluated with an explicit extended Zimmermann expression. The formula is generalized from the standard expression by including electron mean free path and the imaginary part of the gap energy of the material [1]. The quality factor of the microresonator consisting of a 50 nm thick single layer Nb film is also calculated by this compact expression and quantitatively agrees with the measured results as well. The quality factor of the microresonator made of trilayer films is shown to be larger than that of the microresonator with only a single Nb film.
We report on a simple yet versatile design for a tunable superconducting microstrip resonator. Niobium nitride is employed as the superconducting material and aluminum oxide, produced by atomic layer deposition, as the dielectric layer. We show that the high quality of the dielectric material allows to reach the internal quality factors in the order of Qi∼104 in the single photon regime. Qi rapidly increases with the number of photons in the resonator N and exceeds 105 for N∼10−50. A straightforward modification of the basic microstrip design allows to pass a current bias through the strip and to control its kinetic inductance. We achieve a frequency tuning δf=62 MHz around f0=2.4 GHz for a fundamental mode and δf=164 MHz for a third harmonic. This translates into a tuning parameter Qiδf/f0=150. The presented design can be incorporated into essentially any superconducting circuitry operating at temperatures below 2.5 K.
We present measurements of the unloaded quality factor of superconducting microstrip resonators at 77 K and 3.86 GHz. The resonators were made of 0.3 μm thick YBa 2 Cu 3 O 7 films with a transition temperature of 90 K on both sides of ceria-buffered 3 inch sapphire wafers. In particular, we investigated the effect of a 0.3 μm thick gold contact layer on the resonator performance. It was found that the gold layer decreases the quality factor by a factor of almost 5. This result is due to an additional microwave loss in the gold film which can be quantitatively described by the impedance transformation rules for transmission lines. On the basis of the quantitative analysis, we suggest a selective removal of the contact layer by appropriate patterning in order to eliminate the extra loss without deterioration of the low-ohmic galvanic contact to the microwave housing. The experimental results demonstrate the usefulness of the proposed method. Their comparison with the calculated surface current density in the ground plane shows that the contact layer has to be in an area where the current is zero. Furthermore, the results reveal that the surface current density distribution in the ground plane and microstrip depends on the microwave power.
Superconducting coplanar waveguide resonators are essential components in quantum processors, where their internal quality factor (Qi) constrains qubit coherence and readout fidelity. In niobium devices, microwave losses at millikelvin temperatures are strongly influenced by two-level systems (TLS) associated with the complex NbOx surface oxide. To mitigate these losses, we investigate a surface-engineering approach in which Nb films are capped in situ with a thin tantalum layer to suppress Nb2O5 formation and replace the native NbOx interface with a Ta-based oxide. We fabricate Nb/Ta bilayer and reference Nb resonators on high-resistivity silicon using identical DC sputtering and wet etching conditions, and characterize their performance at millikelvin temperatures. Fresh Ta-encapsulated devices exhibit internal quality factors up to 2.4 x 10^6 in the near-single-photon regime, with power dependence consistent with reduced TLS-related loss at the metal-air interface. A control Nb device fabricated under the same process shows comparatively lower Q_TLS, consistent with the beneficial effect of the Ta capping layer. Furthermore, ageing tests performed on Nb/Ta resonators after six months reveal a moderate reduction in Q_TLS relative to their initial values, yet the performance remains superior to newly fabricated Nb-only devices. These results suggest that thin Ta encapsulation enhances interface quality and contributes to improved temporal stability while remaining compatible with Nb-based fabrication workflows.
The simplest model of nonlinear response of a superconducting thin film is used for modeling the nonlinear phenomena in a superconducting transmission line and a microstrip resonator. The specified characteristic power of the transmission line is suggested to use as a fitting parameter for numerical description of the microstrip line nonlinearity at microwaves. Quantitative agreement of simulated and experimental data has been obtained for the incident power dependent transmission coefficient of a microstrip line section and a high quality microstrip resonator. Numerical results have also been obtained for the power of the third harmonic radiated from the nonlinear resonator.