The quality factor of microstrip line resonators made of 20/50/20 nm Nb/NbN/Nb trilayer films has been calculated as microwave transmission through the cascade of three single layers, and in agreement with experimental data. Each layer is evaluated with an explicit extended Zimmermann expression. The formula is generalized from the standard expression by including electron mean free path and the imaginary part of the gap energy of the material [1]. The quality factor of the microresonator consisting of a 50 nm thick single layer Nb film is also calculated by this compact expression and quantitatively agrees with the measured results as well. The quality factor of the microresonator made of trilayer films is shown to be larger than that of the microresonator with only a single Nb film.
Elemental good metals, including noble metals (Cu, Ag, Au) and several
s-block elements, do not exhibit superconductivity in bulk at ambient pressure, mainly due to weak electron-phonon coupling that cannot overcome Coulomb repulsion. Quantum confinement in ultra-thin films reshapes the electronic spectrum and the density of states near the Fermi level, producing strong, often non-monotonic, thickness dependencies of the critical temperature in established superconductors. Here, we examine whether confinement alone, or combined with proximity effects, can induce superconductivity in metals that are non-superconducting in bulk form. We review recent theoretical progress and introduce a unified framework based on a confinement-generalized, isotropic one-band Eliashberg theory, where the normal density of states becomes energy dependent and key parameters (
EF,
λ, $μ^$) acquire explicit thickness dependence. By numerically solving the Eliashberg equations using ab initio or experimentally determined electron-phonon spectral functions
α2F(Ω) and Coulomb pseudopotentials $μ^$, and without adjustable parameters, we compute the critical temperature
Tc as a function of film thickness for representative noble, alkali, and alkaline-earth metals. The results predict that superconductivity emerges only in selected cases and within extremely narrow thickness windows, typically at sub-nanometer scales (
L∼0.4−0.6 nm), indicating strong fine-tuning requirements for confinement-induced superconductivity in good metals. We also consider layered superconductor/normal-metal systems where confinement and proximity effects coexist. In these heterostructures, a substantial enhancement of the critical temperature is predicted, even when the constituent materials are non-superconducting or weak superconductors in bulk form.
In this work, we find that Al cladding on Nb microstrip resonators is an efficient way to suppress nonlinear responses induced by local Joule heating, resulting in improved microwave power handling capability. This improvement is likely due to the proximity effect between the Al and the Nb layers. The proximity effect is found to be controllable by tuning the thickness of the Al layer. We show that improving the film quality is also helpful as it enhances the microwave critical current density, but it cannot eliminate the local heating.
Utilizing tantalum (Ta) in superconducting circuits has led to significant improvements, such as high qubit lifetimes and quality factors in both qubits and resonators, underscoring the importance of material optimization in quantum device performance. In this work, we explore superconducting gap engineering in Ta-based devices as a strategy to expand the range of viable host materials. By alloying 20 atomic percent hafnium (Hf) into Ta thin films, we achieve a superconducting transition temperature (
Tc) of 6.09~K, as measured by DC transport, reflecting an increased superconducting gap. We systematically vary deposition conditions to control film orientation and transport properties of the Ta-Hf alloy films. The enhancement in
Tc is further confirmed by microwave measurements at millikelvin temperatures. Despite the 40\% increase in
Tc relative to pure Ta, the loss contributions from two-level systems (TLS) and quasiparticles (QPs) remain unchanged in the low-temperature regime. These findings highlight the potential of material engineering to improve superconducting circuit performance and motivate further exploration of engineered alloys for quantum technologies.
The performance and coherence of superconducting quantum systems are fundamentally tied to the quality of the materials from which they are built. In superconducting transmon qubits, many loss mechanisms and sources of decoherence originate from material imperfections or unwanted oxide formation. Likewise, semiconductor–superconductor hybrid systems depend on high-quality interfaces to ensure strong coupling between electronic states in the two materials. In such hybrid devices, the accessible operating regime is often dictated by the intrinsic material properties of either the semiconductor or the superconductor. Advancing quantum device performance therefore requires exploring new material systems and optimizing their physical characteristics. In this thesis, we present the development of several superconducting material platforms for quantum technologies, including superconducting qubits, single-photon detectors, and semiconductor superconductor hybrid devices. We focus on the growth and characterization of superconducting films and heterostructures, and we establish clear connections between their material properties and the resulting device performance. First, we will present a novel semiconductor-superconductor hybrid material based on in-situ deposited epitaxial layers of Nb and Al on a shallow InAs quantum well. In this structure, the Al interlayer provides an epitaxial connection between an in-situ magnetron sputtered Nb or NbTi thin film and a shallow InAs two dimensional electron gas. This metal-to-metal epitaxy is achieved by optimization of the material stack and results in an induced superconducting gap of approximately 1 meV, determined from transport measurements of superconductor semiconductor Josephson junctions. This induced gap is approximately five times larger than the values reported for Al-based hybrid materials and indicates the formation of highly-transparent interfaces that are required in high-quality hybrid material platforms. Then, we discuss a different approach in the next chapter where we develop a hybrid material based on a molecular beam epitaxy grown InAsSb surface quantum well with an in-situ deposited Nb layer directly on top of the quantum well. Relative to conventional Al-InAs based systems, the InAsSb surface quantum well offers a lower effective mass and stronger spin-orbit interaction, while the Nb layer has a higher critical temperature and a larger critical magnetic field. The in-situ deposition of the Nb layer directly on top of the quantum well results in a high-quality interface that enables strong coupling to the InAsSb quantum well. Transport measurements on Josephson junctions reveal an induced superconducting gap of 1.3 meV and a critical current density of 3.75 × 10³A/cm². Furthermore, a planar asymmetric SQUID is realized, exhibiting gate-tunable superimposed oscillations originating from both the individual Josephson junction and the full SQUID loop. The large induced superconducting gap combined with strong spin-orbit interaction position this material as an attractive platform for experiments exploring gate-tunable superconductivity and topological superconducting devices. In the next chapter, we will focus on establishing a link between Nb film crystal properties and their performance in superconducting circuits. In this study, we investigate the microwave properties of niobium resonators with different crystalline properties and related surface topographies. We analyze a series of magnetron sputtered films in which the Nb crystal orientation and surface topography are changed by varying the substrate temperatures between room temperature and 975 K. The lowest-loss resonators that we measure have quality factors of over 10⁶ at single-photon powers, among the best ever recorded using the Nb on sapphire platform. We observe the highest quality factors in films grown at an intermediate temperature regime of the growth series (550 K) where the films display both preferential ordering of the crystal domains and low surface roughness. Furthermore, we analyze the temperature-dependent behavior of our resonators to learn about how the quasi-particle density in the Nb film is affected by the niobium crystal structure and the presence of grain boundaries. Then, we explore yet a different material platform by attempting to realize onchip NbTiN single photon detectors on LiNbO₃, an emerging photonic platform with high potential for scalable quantum information processing. We use DC reactive magnetron sputtering to grow high-quality NbTiN thin films and investigate the impact of substrate temperature during NbTiN growth. We achieve four nm thick superconducting films with a critical temperature (𝑇𝑐) of 12.3 K grown at a substrate temperature of 825 K. We demonstrate that the increased substrate temperature reduces the oxygen concentration in our films and improves the overall stoichiometry. In addition, we integrate these films with the LiNbO3 platform and investigate the obtained interface quality. Finally, we fabricate superconducting nanowire single photon detectors from the NbTiN film on LiNbO₃ and characterize the detector performance. Lastly, we report a gate-tunable Josephson diode effect in hybrid nanowire junctions consisting of a spin-orbit-coupled semiconductor core coated with epitaxial ferromagnetic insulator and superconductor shells. The wires display a hysteretic superconducting window as a function of axial magnetic field. In the superconducting regime, the devices exhibit nonreciprocal current transport, with the diode efficiency showing a strong dependence on back-gate voltage. The effect persists in a remanent magnetization state following a controlled demagnetization procedure, establishing zero-field operation. The combination of results presented in this thesis stress the importance of a material-focused approach in advancing the performance of quantum hardware. The novel hybrid material platforms developed in this thesis expand the operating regime of devices, which could enable future experiments involving gate-tunable superconductivity or topological properties. Similarly, we demonstrate that optimizing superconductor crystal structure benefits quantum devices, such as single-photon detectors and superconducting resonators.
The integration of low-loss dielectrics into superconducting circuits is of importance to the functionality of quantum computers and sensors. In this work, we fabricate and measure niobium resonators atop few-layer, epitaxial hexagonal boron nitride (hBN) grown by Molecular Beam Epitaxy on a sapphire substrate and compare against a control counterpart without hBN. We conduct radiofrequency measurements which probe the responses to power, temperature, and temporal fluctuations of two-level systems. The resonators integrating hBN maintain low dielectric loss with a low-power internal loss tangent on the order of
10−6, and demonstrate hBN can be added to the conventional superconducting qubit stack with minimal degradation of the quality factor. This research represents a first step towards a materials-driven strategy to eliminate phonon-mediated correlated errors in solid-state quantum systems, which leverages the thermal properties of 2D materials to prevent athermal phonons excited in the device substrate from transmitting across the superconductor-substrate interface. The same technique applied to quantum sensors would maximize phonon collection by blocking phonons from entering passive metal films.