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arXiv:1803.10484 · Optics Letters

Complementary metal-oxide semiconductor compatible source of single photons at near-visible wavelengths

Robert Cernansky, Francesco Martini, Alberto Politi

Published Feb 12, 2018• 9 citations
arXivHTMLPDF

Abstract

We demonstrate on-chip generation of correlated pairs of photons in the near-visible spectrum using a CMOS compatible plasma-enhanced chemical vapor deposition silicon nitride photonic device. Photons are generated via spontaneous four wave mixing enhanced by a ring resonator with high intrinsic quality Q-factor of 3,20,000, resulting in a generation rate of 950,000 pairsmW. The high brightness of this source offers the opportunity to expand photonic quantum technologies over a broad wavelength range and provides a path to develop fully integrated quantum chips working at room temperature.

DOI
10.1364/ol.43.000855

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We demonstrate on-chip generation of correlated pairs of photons in the near-visible spectrum using a CMOS compatible plasma-enhanced chemical vapor deposition silicon nitride photonic device. Photons are generated via spontaneous four wave mixing enhanced by a ring resonator with high intrinsic quality Q-factor of 3,20,000, resulting in a generation rate of 950,000 pairsmW. The high brightness of this source offers the opportunity to expand photonic quantum technologies over a broad wavelength range and provides a path to develop fully integrated quantum chips working at room temperature.
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Correlated photon pairs are a fundamental building block of quantum photonic systems. While pair sources have previously been integrated on silicon chips built using customized photonics manufacturing processes, these often take advantage of only a small fraction of the established techniques for microelectronics fabrication and have yet to be integrated in a process that also supports electronics. Here we report the first demonstration of quantum-correlated photon pair generation in a device fabricated in an unmodified advanced (sub-100-nm) complementary metal-oxide semiconductor (CMOS) process, alongside millions of working transistors. The microring resonator photon pair source is formed in the transistor layer structure, with the resonator core formed by the silicon layer typically used for the transistor body. With ultralow CW on-chip pump powers ranging from 4.8 to 400 μW, we demonstrate pair generation rates between 165 Hz and 332 kHz using >80% efficient WSi superconducting nanowire single-photon detectors. Coincidences-to-accidentals ratios consistently exceeding 40 were measured, with a maximum of 55. In the process of characterizing this source, we also accurately predict pair generation rates from the results of classical stimulated four-wave mixing measurements. This proof-of-principle device demonstrates the potential of commercial CMOS microelectronics as an advanced quantum photonics platform with the capability of large volumes and pristine process control, where state-of-the-art high-speed digital circuits could interact with quantum photonic circuits.
Multi-wavelength quantum light sources, especially at telecom band, are extremely desired in quantum information technology. Despite recent impressive advances, such a quantum light source with high quality remains challenging. Here we demonstrate a multi-wavelength quantum light source using a silicon nitride micro-ring with a free spectral range of 200 GHz. The generation of eight pairs of correlated photons is ensured in a wavelength range of 25.6 nm. With device optimization and noise-rejecting filters, our source enables the generation of heralded single-photons - at a rate of 62 kHz with gh(2)(0)=0.014±0.001g^{(2)}_{h}(0)=0.014\pm0.001gh(2)​(0)=0.014±0.001, and the generation of energy-time entangled photons - with a visibility of 99.39±0.45%99.39\pm 0.45\%99.39±0.45% in the Franson interferometer. These results, at room temperature and telecom wavelength, in a CMOS compatible platform, represent an important step towards integrated quantum light devices for the quantum networks.
Integrated quantum photonics relies critically on the purity, scalability, integrability, and flexibility of a photon source to support diverse quantum functionalities on a single chip. Here we report a chip-scale photon-pair source on the silicon-on-insulator platform that utilizes dramatic cavity-enhanced four-wave mixing in a high-Q silicon microdisk resonator. The device is able to produce high-quality photon pairs at different wavelengths with a high spectral brightness of 6.24×10(7) pairs/s/mW(2)/GHz and photon-pair correlation with a coincidence-to-accidental ratio of 1386 ± 278 while pumped with a continuous-wave laser. The superior performance, together with the structural compactness and CMOS compatibility, opens up a great avenue towards quantum silicon photonics with capability of multi-channel parallel information processing for both integrated quantum computing and long-haul quantum communication.
Correlated single photons provide a means to drive applications such as quantum computing and quantum communications. Correlated single photons can be generated via parametric down conversion in second–order nonlinear media or spontaneous four–wave mixing in third–order nonlinear media. In particular, complementary metal–oxide–semiconductor (CMOS) technology allows for seamless integration with electronics, providing the potential for a completely on-chip solution for quantum information processing. Ultra–silicon–rich nitride platform is a backend CMOS compatible platform, that has already been used to obtain high gain optical parametric amplification, wideband supercontinuum and enhanced nonlinearity in photonic crystal waveguides due to its large nonlinearity. In this work, we demonstrate correlated photon pair generation based on spontaneous four–wave mixing using ultra-silicon-rich nitride waveguides for the application in CMOS–based optical quantum technologies. A CW pump at a wavelength of 1555.747nm amplified using an EDFA is filtered through five wavelength division multiplexers (WDM) with a bandwidth of 1.2nm, providing 175dB suppression of EDFA induced pump sideband noise. The filtered quasi–TE pump, adjusted using a fiber polarization controller, is coupled into an ultra–silicon–rich nitride waveguide using a lensed fiber. A SiO2 cladded waveguide with a width of 550nm and height of 300nm possesses a high nonlinear parameter of 530W^-1/m with anomalous dispersion necessary for spontaneous four-wave mixing. The waveguide output is coupled into a lensed fiber and 7 cascaded WDMs are used to provide 245dB of residual pump filtration. The pump–suppressed output is spectrally separated into signal/idler part using WDMs. We refer to lower (higher) frequency photon as the signal (idler). The spontaneously generated signal and idler photons are filtered using cascaded tunable band pass filters (OTF) centered at 1571.24nm and cascaded WDMs centered at 1540.56nm, respectively. The bandwidth of the tunable OTF and WDM is 0.5nm and 1.2nm, therefore the correlated signal/idler photons are observed within the bandwidth window of 0.5nm induced by the OTF. The signal and idler photons are measured using InGaAs/InP avalanche photodetectors. The time correlation between signal and idler photons is obtained using a time interval analyzer with a detection efficiency of 20% and dead time of 15μs.The time bin is set to 81ps and the photon collection time is 240s. The coincidence peak is located ~11ns in the time–bin histogram due to the optical-path difference between the tunable OTF and WDM at respective signal and idler sides. The experimental raw coincidence counts (Hz), calculated by subtracting the accidental rate from the coincidence peak, show a quadratic increase with respect to coupled pump power. At the maximum coupled power of 5mW, the raw coincidence count is ~1Hz. We achieve a raw coincidence–to–accidental ratio (CAR) of up to 3. Therefore, we succeeded to observe correlated photon pair generation based on spontaneous four–wave mixing using the ultra–silicon–rich-nitride waveguide as a CMOS compatible platform, for future applications in quantum technologies.