We investigate a quarter-filled two-band Hubbard model involving a crystal-field splitting, which lifts the orbital degeneracy as well as an interorbital hopping (interband hybridization). Both terms are relevant to the realistic description of correlated materials such as transition-metal oxides. The nature of the Mott metal-insulator transition is clarified and is found to depend on the magnitude of the crystal-field splitting. At large values of the splitting, a transition from a two-band to a one-band metal is first found as the on-site repulsion is increased and is followed by a Mott transition for the remaining band, which follows the single-band (Brinkman-Rice) scenario well documented previously within dynamical mean-field theory. At small values of the crystal-field splitting, a direct transition from a two-band metal to a Mott insulator with partial orbital polarization is found, which takes place simultaneously for both orbitals. This transition is characterized by a vanishing of the quasiparticle weight for the majority orbital but has a first-order character for the minority orbital. It is pointed out that finite-temperature effects may easily turn the metallic regime into a bad metal close to the orbital polarization transition in the metallic phase.
We study the Hubbard model at half band-filling on a Bethe lattice with infinite coordination number in the paramagnetic insulating phase at zero temperature. We use the dynamical mean-field theory (DMFT) mapping to a single-impurity Anderson model with a bath whose properties have to be determined self-consistently. For a controlled and systematic implementation of the self-consistency scheme we use the fixed-energy (FE) approach to the DMFT. In FE-DMFT the onset and the width of the Hubbard bands are adjusted self-consistently but the energies of the bath levels are kept fixed relatively to both band edges during the calculation of self-consistent hybridization strengths between impurity and bath sites. Using the dynamical density-matrix renormalization group method (DDMRG) we calculate the density of states with a resolution ranging from 3% of the bare bandwidth
W=4t at high energies to 0.5% in the vicinity of the gap. The DDMRG resolution and accuracy for the density of states and the gap is superior to those obtained with other numerical methods in previous DMFT investigations. We find that the Mott gap closes at a critical coupling
Uc/t=4.45±0.05. At
U=4.5t, we observe prominent shoulders near the onset of the Hubbard bands. They are the remainders of the quasi-particle resonance in the metallic phase which appears to split when the gap opens at
Uc.
The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping is calculated analytically as a function of the on-site Coulomb interaction
U at the
d-orbital and the charge-transfer energy
Δ between the
d- and
p-orbitals. Critical behaviour of the quasiparticle weight is also obtained analytically as a function of
U and
Δ. The analytic results are in good agreement with the numerical results of the exact diagonalization method.
We develop a precise and reliable numerical method for the calculation of electronic properties of the two orbital Hubbard model in a square lattice at half filling, based on the Dynamical Mean Field Theory (DMFT). We use the Density Matrix Renormalization Group (DMRG) as the impurity solver for the DMFT's selfconsistent equations to obtain accurate values for the Green's functions on the real axis. This way, reliable densities of states are obtained that do not need to resort to analytical continuation methods as those using quantum Monte Carlo techniques. Large system sizes can be achieved with increasing accuracy.
We show numerically that the nature of the doping-induced metal-insulator transition in the two-dimensional Hubbard model with hopping matrix element
t and Coulomb repulsion
U is radically altered by the inclusion of a term
W that depends upon a square of a single-particle nearest-neighbor hopping. This result is reached by computing the localization length ${\ensuremath{\xi}}_{l}$ in the insulating state. At
W/t=0.05 and
U/t=4, we find results consistent with ${\ensuremath{\xi}}_{l}\ensuremath{\sim}|\ensuremath{\mu}\ensuremath{-}{\ensuremath{\mu}}_{c}{|}^{\ensuremath{-}1/2}$ where ${\ensuremath{\mu}}_{c}$ is the critical chemical potential. In contrast, ${\ensuremath{\xi}}_{l}\ensuremath{\sim}|\ensuremath{\mu}\ensuremath{-}{\ensuremath{\mu}}_{c}{|}^{\ensuremath{-}1/4}$ for the Hubbard model at
U/t=4. At half-filling, we calculate the density of states $N(\ensuremath{\omega})$. The large value of $N(\ensuremath{\omega})$ in the vicinity of $\ensuremath{\omega}={\ensuremath{\mu}}_{c}$ present at
W=0 is suppressed with growing values of
W. At finite doping, the
d-wave pair-field correlations are enhanced with growing values of
W. The numerical results imply that at finite values of
W doping the antiferromagnetic Mott insulator leads to a ${d}_{{x}^{2}\ensuremath{-}{y}^{2}}$ superconductor.
A repulsive Coulomb interaction between electrons in different orbitals in correlated materials can give rise to bound quasiparticle states. We study the nonhybridized two-orbital Hubbard model with intra- (inter)orbital interaction
U(U12) and different bandwidths using an improved dynamical mean-field theory numerical technique which leads to reliable spectra on the real energy axis directly at zero temperature. We find that a finite density of states at the Fermi energy in one band is correlated with the emergence of well-defined quasiparticle states at excited energies $\mathrm{\ensuremath{\Delta}}=U\ensuremath{-}{U}_{12}$ in the other band. These excitations are interband holon-doublon bound states. At the symmetric point
U=U12, the quasiparticle peaks are located at the Fermi energy, leading to a simultaneous and continuous Mott transition settling a long-standing controversy.