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arXiv:0801.4356 · Physical Review B

Effect of crystal-field splitting and interband hybridization on the metal-insulator transitions of strongly correlated systems

A. I. Poteryaev, Michel Ferrero, Antoine Georges, Olivier Parcollet

Published Jul 23, 2008• 63 citations
arXivHTMLPDF

Abstract

We investigate a quarter-filled two-band Hubbard model involving a crystal-field splitting, which lifts the orbital degeneracy as well as an interorbital hopping (interband hybridization). Both terms are relevant to the realistic description of correlated materials such as transition-metal oxides. The nature of the Mott metal-insulator transition is clarified and is found to depend on the magnitude of the crystal-field splitting. At large values of the splitting, a transition from a two-band to a one-band metal is first found as the on-site repulsion is increased and is followed by a Mott transition for the remaining band, which follows the single-band (Brinkman-Rice) scenario well documented previously within dynamical mean-field theory. At small values of the crystal-field splitting, a direct transition from a two-band metal to a Mott insulator with partial orbital polarization is found, which takes place simultaneously for both orbitals. This transition is characterized by a vanishing of the quasiparticle weight for the majority orbital but has a first-order character for the minority orbital. It is pointed out that finite-temperature effects may easily turn the metallic regime into a bad metal close to the orbital polarization transition in the metallic phase.

DOI
10.1103/physrevb.78.045115

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We investigate a quarter-filled two-band Hubbard model involving a crystal-field splitting, which lifts the orbital degeneracy as well as an interorbital hopping (interband hybridization). Both terms are relevant to the realistic description of correlated materials such as transition-metal oxides. The nature of the Mott metal-insulator transition is clarified and is found to depend on the magnitude of the crystal-field splitting. At large values of the splitting, a transition from a two-band to a one-band metal is first found as the on-site repulsion is increased and is followed by a Mott transition for the remaining band, which follows the single-band (Brinkman-Rice) scenario well documented previously within dynamical mean-field theory. At small values of the crystal-field splitting, a direct transition from a two-band metal to a Mott insulator with partial orbital polarization is found, which takes place simultaneously for both orbitals. This transition is characterized by a vanishing of the quasiparticle weight for the majority orbital but has a first-order character for the minority orbital. It is pointed out that finite-temperature effects may easily turn the metallic regime into a bad metal close to the orbital polarization transition in the metallic phase.
We study by dynamical mean-field theory the ground state of a quarter-filled Hubbard model of two bands with different bandwidths. At half-filling, this model is known to display an orbital selective Mott transition, with the narrower band undergoing Mott localization while the wider one being still itinerant. At quarter-filling, the physical behavior is different and to some extent reversed. The interaction generates an effective crystal field splitting, absent in the Hamiltonian, that tends to empty the narrower band in favor of the wider one, which also become more correlated than the former at odds with the orbital selective paradigm. Upon increasing the interaction, the depletion of the narrower band can continue till it empties completely and the system undergoes a topological Lifshitz transition into a half-filled single-band metal that eventually turns insulating. Alternatively, when the two bandwidths are not too different, a first order Mott transition intervenes before the Lifshitz's one. The properties of the Mott insulator are significantly affected by the interplay between spin and orbital degrees of freedom.
We study the effects of interorbital hopping on orbital fluctuations and Mott-Hubbard metal-insulator transition (MIT) in the two-orbital Hubbard model within the extended linearized dynamical mean-field theory. By mapping the model onto an effective model with different bandwidths through the canonical transformation, we find that at half-filling, the increases of the interorbital Coulomb interaction ${U}^{\ensuremath{'}}$ and the Hund's coupling JJJ drive the MIT, and the critical Jc{J}_{c}Jc​ for MIT increases with the lift of the interorbital hopping integral tab{t}_{ab}tab​. Meanwhile at quarter filling and in the strong correlation regime, the system without tab{t}_{ab}tab​ exhibits MIT with the decreasing of JJJ, and favors the orbital liquid ground state. However, the system transits from metal to insulator with the increasing of tab{t}_{ab}tab​, accompanied with the rising of the orbital order parameter. These results show the important role of the interorbital hopping in the orbital fluctuation and orbital ordering.
We study the Mott transition in the three-orbital Hubbard model. To investigate how the orbital level splitting and the Ising-type Hund's coupling affect the Mott transition in the case of two electrons per site, we use the dynamical mean-field theory combined with continuous-time quantum Monte Carlo simulations. The calculation of the double occupancy reveals that the critical interaction strength separating a metallic phase and two kinds of insulating phases shows a nonmonotonic behavior as a function of the level splitting. We find that this behavior is characteristic for 1/31/31/3 filling, in comparison with the preceding results for different fillings and for two-orbital models. Strong competition between the two insulators results in an intriguing first-order transition to an insulating phase having intermediate characters between Mott and band insulators. It is also found that the two insulators show different behaviors in the phase boundary with the metallic phase in the interaction-temperature plane, which is reflected in a difference in the quasiparticle behavior around the transition. We also discuss the orbital selective Mott transition for larger Hund's coupling, which is compared with previous study at zero temperature.
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We examine whether the Mott transition of a half-filled, two-orbital Hubbard model with unequal bandwidths occurs simultaneously for both bands or whether it is a two-stage process in which the orbital with narrower bandwith localizes first (giving rise to an intermediate ``orbital-selective'' Mott phase). This question is addressed using both dynamical mean-field theory and a representation of fermion operators in terms of slave quantum spins, followed by a mean-field approximation (similar in spirit to a Gutzwiller approximation). In the latter approach, the Mott transition is found to be orbital selective for all values of the Coulomb exchange (Hund) coupling JJJ when the bandwidth ratio is small and only beyond a critical value of JJJ when the bandwidth ratio is larger. Dynamical mean-field theory partially confirms these findings, but the intermediate phase at J=0J=0J=0 is found to differ from a conventional Mott insulator, with spectral weight extending down to arbitrary low energy. Finally, the orbital-selective Mott phase is found, at zero temperature, to be unstable with respect to an interorbital hybridization VVV and replaced at small VVV by a state with a large effective mass (and a low quasiparticle coherence scale) for the narrower band.
We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others degenerate. We use single-site dynamical mean-field theory combined with continuous time quantum Monte Carlo impurity solver to calculate a phase diagram as a function of total electron filling N and crystal field splitting Δ . We find a large region of orbital-selective Mott phase in the phase diagram when the doping is large enough. Further analysis indicates that the large region of orbital-selective Mott phase is driven and stabilized by doping. Such models may account for the orbital-selective Mott transition in some doped realistic strongly correlated materials.