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arXiv:cond-mat/0504420 · Physical Review B

Effects of interorbital hopping on orbital fluctuations and metal-insulator transitions: Extended linearized dynamical mean-field theory

Yun Song, Liang‐Jian Zou

Published Aug 9, 2005• 23 citations
arXivHTMLPDF

Abstract

We study the effects of interorbital hopping on orbital fluctuations and Mott-Hubbard metal-insulator transition (MIT) in the two-orbital Hubbard model within the extended linearized dynamical mean-field theory. By mapping the model onto an effective model with different bandwidths through the canonical transformation, we find that at half-filling, the increases of the interorbital Coulomb interaction ${U}^{\ensuremath{'}}$ and the Hund's coupling $J$ drive the MIT, and the critical ${J}_{c}$ for MIT increases with the lift of the interorbital hopping integral ${t}_{ab}$. Meanwhile at quarter filling and in the strong correlation regime, the system without ${t}_{ab}$ exhibits MIT with the decreasing of $J$, and favors the orbital liquid ground state. However, the system transits from metal to insulator with the increasing of ${t}_{ab}$, accompanied with the rising of the orbital order parameter. These results show the important role of the interorbital hopping in the orbital fluctuation and orbital ordering.

DOI
10.1103/physrevb.72.085114

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We study the effects of interorbital hopping on orbital fluctuations and Mott-Hubbard metal-insulator transition (MIT) in the two-orbital Hubbard model within the extended linearized dynamical mean-field theory. By mapping the model onto an effective model with different bandwidths through the canonical transformation, we find that at half-filling, the increases of the interorbital Coulomb interaction U\ensuremath′{U}^{\ensuremath{'}}U\ensuremath′ and the Hund's coupling JJJ drive the MIT, and the critical Jc{J}_{c}Jc​ for MIT increases with the lift of the interorbital hopping integral tab{t}_{ab}tab​. Meanwhile at quarter filling and in the strong correlation regime, the system without tab{t}_{ab}tab​ exhibits MIT with the decreasing of JJJ, and favors the orbital liquid ground state. However, the system transits from metal to insulator with the increasing of tab{t}_{ab}tab​, accompanied with the rising of the orbital order parameter. These results show the important role of the interorbital hopping in the orbital fluctuation and orbital ordering.
The effect of interorbital hopping on the orbital selective Mottness in a two-band correlation system is investigated by using the dynamical mean-field theory with the Lanczos method as impurity solver. We construct the phase diagram of the two-orbital Hubbard model with interorbital hopping (t12)t_{12})t12​), where the orbital selective Mott phases (OSMP) show different evolution trends. We find that the negative interorbital hopping (t12<0t_{12}<0t12​<0) can enhance the OSMP regime upon tuning the effective bandwidth ratio. On the contrary, for the cases with positive interorbital hopping (t12>0t_{12}>0t12​>0), the OSMP region becomes narrow with the increase of orbital hybridization until it disappears. It is also shown that a new OSMP emerges for a large enough positive interorbital hopping, owing to the role exchange of wide and narrow effective orbitals caused by the large t12t_{12}t12​. Our results are also applicable to the hole-overdoped Ba2_22​CuO4−δ_{4-δ}4−δ​ superconductor, which is an orbital-selective Mott compound at half-filling.
Electron correlations in the two-orbital Hubbard model at half-filling are investigated by combining dynamical mean field theory with the exact diagonalization method. We systematically study how the interplay of the intra- and interband Coulomb interactions, together with the Hund coupling, effects the metal--insulator transition. It is found that if the intra- and interband Coulomb interactions are nearly equal, the Fermi-liquid state is stabilized due to orbital fluctuations up to fairly large interactions, while the system is immediately driven to the Mott insulating phase away from this condition. The effects of the isotropic and anisotropic Hund coupling are also addressed.
We investigate a quarter-filled two-band Hubbard model involving a crystal-field splitting, which lifts the orbital degeneracy as well as an interorbital hopping (interband hybridization). Both terms are relevant to the realistic description of correlated materials such as transition-metal oxides. The nature of the Mott metal-insulator transition is clarified and is found to depend on the magnitude of the crystal-field splitting. At large values of the splitting, a transition from a two-band to a one-band metal is first found as the on-site repulsion is increased and is followed by a Mott transition for the remaining band, which follows the single-band (Brinkman-Rice) scenario well documented previously within dynamical mean-field theory. At small values of the crystal-field splitting, a direct transition from a two-band metal to a Mott insulator with partial orbital polarization is found, which takes place simultaneously for both orbitals. This transition is characterized by a vanishing of the quasiparticle weight for the majority orbital but has a first-order character for the minority orbital. It is pointed out that finite-temperature effects may easily turn the metallic regime into a bad metal close to the orbital polarization transition in the metallic phase.
The effect of interorbital hopping on orbital selective Mottness in a two-band correlation system is investigated by using the dynamical mean-field theory with the Lanczos method as impurity solver. The phase diagrams of the two-orbital Hubbard model with non-local interorbital hopping (t12) , where the orbital selective Mott phases (OSMP) region is expanded by the increasing of the interorbital hopping. We compare the results obtained by self-consistent relations of Bethe lattice and squate lattice based on DMFT procedure, and the general OSMP physics of Bethe lattice is consistent with that of the square lattice while the critical points of two kinds of lattices are different. We extend the method to the study of half-filled Ba2CuO4–δ materials. By comparing with the band structure obtained from the density functional theory (DFT), it is found that the isotropic inter-orbital hopping has a great influence on the bandstructure. The DFT bandstructure in DMFT is considered, and the phase diagram of the material is obtained. The half-filled Ba2CuO4–δ should be orbital-selective Mott compound according to our results.
We study by dynamical mean-field theory the ground state of a quarter-filled Hubbard model of two bands with different bandwidths. At half-filling, this model is known to display an orbital selective Mott transition, with the narrower band undergoing Mott localization while the wider one being still itinerant. At quarter-filling, the physical behavior is different and to some extent reversed. The interaction generates an effective crystal field splitting, absent in the Hamiltonian, that tends to empty the narrower band in favor of the wider one, which also become more correlated than the former at odds with the orbital selective paradigm. Upon increasing the interaction, the depletion of the narrower band can continue till it empties completely and the system undergoes a topological Lifshitz transition into a half-filled single-band metal that eventually turns insulating. Alternatively, when the two bandwidths are not too different, a first order Mott transition intervenes before the Lifshitz's one. The properties of the Mott insulator are significantly affected by the interplay between spin and orbital degrees of freedom.
We reformulate the time-dependent Gutzwiller approximation by M. Schir\'o and M. Fabrizio, [Phys. Rev. Lett. 105, 076401 (2010)] in the framework of slave-boson mean-field theory, which is used to investigate the dynamical Mott transition of the generic two-band Hubbard model at half filling upon an interaction quench. Interorbital fluctuations lead to notable changes with respect to the single-band case. The singular dynamical transition is replaced by a broad regime of long-lived fluctuations between metallic and insulating states, accompanied by intriguing precursor behavior. A mapping to a spin model proves helpful to analyze the different regions in terms of the evolution of an Ising-like order parameter. Contrary to the static case, singlet occupations remain vital in the Mott-insulating regime with finite Hund's exchange.