arXiv:cond-mat/0107202 · Journal of the Physical Society of Japan
Critical Behaviour near the Mott Metal–Insulator Transition in a Two-Band Hubbard Model
Yasuo Ohashi, Yoshiaki Ōno
Abstract
The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping is calculated analytically as a function of the on-site Coulomb interaction $U$ at the $d$-orbital and the charge-transfer energy $Δ$ between the $d$- and $p$-orbitals. Critical behaviour of the quasiparticle weight is also obtained analytically as a function of $U$ and $Δ$. The analytic results are in good agreement with the numerical results of the exact diagonalization method.