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arXiv:1712.01671 · Applied Physics Letters

A method for building low loss multi-layer wiring for superconducting microwave devices

A. Dunsworth, R. Barends, Yu Chen, Zijun Chen, B. Chiaro, Austin G. Fowler, B. Foxen, E. Jeffrey, J. Kelly, P. V. Klimov, E. Lucero, J. Y. Mutus, M. Neeley, C. Neill, C. Quintana, P. Roushan, D. Sank, A. Vainsencher, J. Wenner, T. C. White, H. Neven, John M. Martinis, A. Megrant

Published Feb 5, 2018• 57 citations

Abstract

Complex integrated circuits require multiple wiring layers. In complementary metal-oxide-semiconductor processing, these layers are robustly separated by amorphous dielectrics. These dielectrics would dominate energy loss in superconducting integrated circuits. Here, we describe a procedure that capitalizes on the structural benefits of inter-layer dielectrics during fabrication and mitigates the added loss. We use a deposited inter-layer dielectric throughout fabrication and then etch it away post-fabrication. This technique is compatible with foundry level processing and can be generalized to make many different forms of low-loss wiring. We use this technique to create freestanding aluminum vacuum gap crossovers (airbridges). We characterize the added capacitive loss of these airbridges by connecting ground planes over microwave frequency λ/4 coplanar waveguide resonators and measuring resonator loss. We measure a low power resonator loss of ∼3.9 × 10−8 per bridge, which is 100 times lower than that of dielectric supported bridges. We further characterize these airbridges as crossovers, control line jumpers, and as part of a coupling network in gmon and fluxmon qubits. We measure qubit characteristic lifetimes (T1s) in excess of 30 μs in gmon devices.

DOI: 10.1063/1.5014033

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Complex integrated circuits require multiple wiring layers. In complementary metal-oxide-semiconductor processing, these layers are robustly separated by amorphous dielectrics. These dielectrics would dominate energy loss in superconducting integrated circuits. Here, we describe a procedure that capitalizes on the structural benefits of inter-layer dielectrics during fabrication and mitigates the added loss. We use a deposited inter-layer dielectric throughout fabrication and then etch it away post-fabrication. This technique is compatible with foundry level processing and can be generalized to make many different forms of low-loss wiring. We use this technique to create freestanding aluminum vacuum gap crossovers (airbridges). We characterize the added capacitive loss of these airbridges by connecting ground planes over microwave frequency λ/4 coplanar waveguide resonators and measuring resonator loss. We measure a low power resonator loss of ∼3.9 × 10−8 per bridge, which is 100 times lower than that of dielectric supported bridges. We further characterize these airbridges as crossovers, control line jumpers, and as part of a coupling network in gmon and fluxmon qubits. We measure qubit characteristic lifetimes (T1s) in excess of 30 μs in gmon devices.

Airbridges are extensively employed in superconducting quantum circuits to suppress parasitic slotline modes in coplanar waveguide and minimize crosstalk between control lines. Here, we introduce a fabrication technique for airbridges, leveraging niobium as the bridge layer and aluminum as the sacrificial layer to preclude the introduction of lossy dielectrics or residues upon release. Additionally, we utilize a triangular evaporation method to significantly bolster the structural integrity of the airbridges. Our experimental evaluation, focused on resonators equipped with these airbridges, reveals that the resultant additional loss per bridge is minimal, quantified at (5.0±2.8)×10−9 in the single-photon regime and (6.3±0.9)×10−9 at high drive powers. This advancement underscores the potential of niobium airbridges in facilitating the development of large-scale and high-performance superconducting quantum circuits.

Superconducting circuit devices require electrical interconnects between different circuit elements on the chip, for which conventional device architectures use a combination of two structural elements: \textit{airbridges} to connect non-adjacent elements in the base layer, and \textit{bandages} to connect the electrodes forming the Josephson junctions to the base layer. Bandages introduce unwanted parasitic material interfaces and increase the manufacturing complexity. Here, we overcome the limitations imposed by \emph{bandages} by establishing \textit{all} electrical interconnects with airbridges of varying size fabricated in a single step. The airbridges show a high yield and mechanical stability over a wide range of sizes from

0.5\,μ\mathrm{m}

to

4\,μ\mathrm{m}

in width and from

5\,μ\mathrm{m}

to

40\,μ\mathrm{m}

in length, and show low loss when integrated in coplanar waveguide resonators and transmon qubits. Measured relaxation times up to more than

250\,μ\mathrm{s}

in standard transmon geometries show that the process achieves high coherence while substantially easing and accelerating device fabrication.

Superconducting microwave circuits based on coplanar waveguides (CPW) are susceptible to parasitic slotline modes which can lead to loss and decoherence. We motivate the use of superconducting airbridges as a reliable method for preventing the propagation of these modes. We describe the fabrication of these airbridges on superconducting resonators, which we use to measure the loss due to placing airbridges over CPW lines. We find that the additional loss at single photon levels is small, and decreases at higher drive powers.

In superconducting quantum devices, air bridges enable increased circuit complexity and density, and mitigate the risk of microwave loss arising from mode mixing. We implement aluminum air bridges using a simple process based on single-step electron-beam gradient exposure. The resulting bridges have sizes ranging from 20 µm to 100 µm, with a yield exceeding 99% for lengths up to 36 µm. When used to connect ground planes in coplanar waveguide resonators, the induced loss contributed to the system is negligible, corresponding to a loss per bridge less than 1.0×10−8. The bridge process is compatible with Josephson junctions and allows for the simultaneous creation of low loss bandages between superconducting layers.

In planar superconducting circuits, decoherence due to materials imperfections, especially two-level-system (TLS) defects at different interfaces, is a primary hurdle for advancing quantum computing and sensing applications. Traditional methods for mitigating TLS loss, such as etching oxide layers at metal and substrate interfaces, have proven to be inadequate due to the persistent challenge of oxide regrowth. In this work, we introduce a novel approach that employs molecular self-assembled monolayers (SAMs) to chemically bind at different interfaces of superconducting circuits. This technique is specifically tested here on coplanar waveguide (CPW) resonators, in which this method not only impedes oxide regrowth after surface etching but can also tailors the dielectric properties at different resonators interfaces. The deployment of SAMs results in a consistent improvement in the measured quality factors across multiple resonators, surpassing those with only oxide-etched resonators. The efficiency of our approach i3s supported by microwave measurements of multiple devices conducted at millikelvin temperatures and correlated with detailed X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) characterizations of SAM-passivated resonators. The compatibility of SAMs materials with the established fabrication techniques offers a promising route to improve the performance of superconducting quantum devices.

Low-loss microwave components are used in many superconducting resonant circuits from multiplexed readouts of low-temperature detector arrays to quantum bits. Two-level system defects in amorphous dielectric materials cause excess energy loss. In an effort to improve capacitor components, we have used optical lithography and micromachining techniques to develop superconducting parallel-plate capacitors in which lossy dielectrics are replaced by vacuum gaps. Resonance measurements at 50 mK on lumped LC circuits that incorporate these vacuum-gap capacitors (VGCs) reveal loss tangents at low powers as low as

4\times 10^{-5}

, significantly lower than with capacitors using amorphous dielectrics. VGCs are structurally robust, small, and easily scaled to capacitance values above 100 pF.