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arXiv:0810.1976 · IEEE Transactions on Applied Superconductivity

Vacuum-Gap Capacitors for Low-Loss Superconducting Resonant Circuits

Katarina Cicak, Michael S. Allman, Joshua Strong, Kevin D. Osborn, Raymond W. Simmonds

Published Jun 1, 2009• 20 citations
arXivHTMLPDF

Abstract

Low-loss microwave components are used in many superconducting resonant circuits from multiplexed readouts of low-temperature detector arrays to quantum bits. Two-level system defects in amorphous dielectric materials cause excess energy loss. In an effort to improve capacitor components, we have used optical lithography and micromachining techniques to develop superconducting parallel-plate capacitors in which lossy dielectrics are replaced by vacuum gaps. Resonance measurements at 50 mK on lumped LC circuits that incorporate these vacuum-gap capacitors (VGCs) reveal loss tangents at low powers as low as$4\times 10^{-5}$, significantly lower than with capacitors using amorphous dielectrics. VGCs are structurally robust, small, and easily scaled to capacitance values above 100 pF.

DOI
10.1109/tasc.2009.2019665

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Low-loss microwave components are used in many superconducting resonant circuits from multiplexed readouts of low-temperature detector arrays to quantum bits. Two-level system defects in amorphous dielectric materials cause excess energy loss. In an effort to improve capacitor components, we have used optical lithography and micromachining techniques to develop superconducting parallel-plate capacitors in which lossy dielectrics are replaced by vacuum gaps. Resonance measurements at 50 mK on lumped LC circuits that incorporate these vacuum-gap capacitors (VGCs) reveal loss tangents at low powers as low as4×10−54\times 10^{-5}4×10−5, significantly lower than with capacitors using amorphous dielectrics. VGCs are structurally robust, small, and easily scaled to capacitance values above 100 pF.
We have produced high-quality complex microwave circuits, such as multiplexed resonators and superconducting phase qubits, using a “vacuum-gap” technology that eliminates lossy dielectric materials. We have improved our design and fabrication strategy beyond our earlier work, leading to increased yield, enabling the realization of these complex circuits. We incorporate both novel vacuum-gap wiring crossovers for gradiometric inductors and vacuum-gap capacitors (VGC) on chip to produce resonant circuits that have large internal quality factors (30 000<QI<165 000) at 50 mK, outperforming most dielectric-filled devices. Resonators with VGCs as large as 180 pF confirm single mode behavior of our lumped-element components.
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Complex integrated circuits require multiple wiring layers. In complementary metal-oxide-semiconductor processing, these layers are robustly separated by amorphous dielectrics. These dielectrics would dominate energy loss in superconducting integrated circuits. Here, we describe a procedure that capitalizes on the structural benefits of inter-layer dielectrics during fabrication and mitigates the added loss. We use a deposited inter-layer dielectric throughout fabrication and then etch it away post-fabrication. This technique is compatible with foundry level processing and can be generalized to make many different forms of low-loss wiring. We use this technique to create freestanding aluminum vacuum gap crossovers (airbridges). We characterize the added capacitive loss of these airbridges by connecting ground planes over microwave frequency λ/4 coplanar waveguide resonators and measuring resonator loss. We measure a low power resonator loss of ∼3.9 × 10−8 per bridge, which is 100 times lower than that of dielectric supported bridges. We further characterize these airbridges as crossovers, control line jumpers, and as part of a coupling network in gmon and fluxmon qubits. We measure qubit characteristic lifetimes (T1s) in excess of 30 μs in gmon devices.
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Parallel-plate capacitors (PPC) significantly reduce the size of superconducting microwave resonators, reducing the pixel pitch for arrays of single-photon energy-resolving kinetic inductance detectors (KIDs). The frequency noise of KIDs is typically limited by tunneling two-level systems (TLS), which originate from lattice defects in the dielectric materials required for PPCs. How the frequency noise level depends on the PPC's dimensions has not been experimentally addressed. We measure the frequency noise of 56 resonators with aaa-SiC\mathrm{Si}\mathrm{C}SiC:H\mathrm{H}H PPCs, which cover a factor of 44 in PPC area and a factor of 4 in dielectric thickness. To support the noise analysis, we measure the resonators' TLS-induced power-dependent intrinsic loss and temperature-dependent resonance frequency shift. From the TLS models, we expect a geometry-independent microwave loss and resonance frequency shift, which is set by the TLS properties of the dielectric. However, we observe a thickness-dependent microwave loss and resonance frequency shift; this is explained by surface layers that limit the performance of PPC-based resonators. For a uniform dielectric, the frequency noise level should scale directly inversely with the PPC area and thickness. We observe that an increase in PPC size reduces the frequency noise, but the exact scaling is, in some cases, weaker than expected. Finally, we derive engineering guidelines for the design of KIDs based on PPC-based resonators.