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arXiv:1102.2917 · Applied Physics Letters

Single crystal silicon capacitors with low microwave loss in the single photon regime

Steven J. Weber, Kater W. Murch, D. H. Slichter, Rajamani Vijay, Irfan A. Siddiqi

Published Apr 25, 2011• 54 citations
arXivHTMLPDF

Abstract

We have fabricated superconducting microwave resonators in a lumped element geometry using single crystal silicon dielectric parallel plate capacitors with C>2 pF. Aluminum devices with resonant frequencies between 4.0 and 6.5 GHz exhibited an average internal quality factor Qi of 2×105 in the single photon excitation regime at T=20 mK. Attributing the observed loss solely to the capacitive element, our measurements place an upper bound on the loss tangent of the silicon dielectric layer of tan δi=5×10−6. This level of loss is an order of magnitude lower than is currently observed in structures incorporating amorphous dielectric materials, thus making single crystal silicon capacitors an attractive, robust route for realizing long-lived quantum circuits.

DOI
10.1063/1.3583449

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We have fabricated superconducting microwave resonators in a lumped element geometry using single crystal silicon dielectric parallel plate capacitors with C>2 pF. Aluminum devices with resonant frequencies between 4.0 and 6.5 GHz exhibited an average internal quality factor Qi of 2×105 in the single photon excitation regime at T=20 mK. Attributing the observed loss solely to the capacitive element, our measurements place an upper bound on the loss tangent of the silicon dielectric layer of tan δi=5×10−6. This level of loss is an order of magnitude lower than is currently observed in structures incorporating amorphous dielectric materials, thus making single crystal silicon capacitors an attractive, robust route for realizing long-lived quantum circuits.
Abstract Increasing the density of superconducting circuits requires compact components, however, superconductor-based capacitors typically perform worse as dimensions are reduced due to loss at surfaces and interfaces. Here, parallel plate capacitors composed of aluminum-contacted, crystalline silicon fins are shown to be a promising technology for use in superconducting circuits by evaluating the performance of lumped element resonators and transmon qubits. High aspect ratio Si-fin capacitors having widths below 300 nm with an approximate total height of 3 μm are fabricated using anisotropic wet etching of Si(110) substrates followed by aluminum metallization. The single-crystal Si capacitors are incorporated in lumped element resonators and transmons by shunting them with lithographically patterned aluminum inductors and conventional A l/A l O x /A l Josephson junctions respectively. Microwave characterization of these devices suggests state-of-the-art performance for superconducting parallel plate capacitors with low power internal quality factor of lumped element resonators greater than 500 k and qubit T 1 times greater than 25 μs. These results suggest that Si-Fins are a promising technology for applications that require low-loss, compact, superconductor-based capacitors with minimal stray capacitance.
Amorphous hydrogenated silicon (a-Si:H) based lumped elements are one of the promising ways for large-scale integration of superconducting quantum devices. We present a detailed study devoted to the plasma-enhanced chemical vapor deposition process parameters' influence on the structure and morphology of a-Si:H dielectric thin films. We experimentally demonstrate a microcrystalline-to-amorphous growth transition by changing the H2/SiH4 ratio and establish a relationship between the film's structure, thickness, and dielectric loss tangent (tan δ). It is shown that the best dielectric loss tangents of tan δLP = 4.5 × 10−5 (average 9.2 × 10−5) and tan δHP = 1.0 × 10−6 (average 1.2 × 10−6) for superconducting lumped elements with 350 nm-thick amorphous films can be achieved in single- and multi-photon regimes at sub-20 mK, correspondingly. These values are extracted by characterizing superconducting resonators with integrated parallel-plate capacitors (C = 0.2…6.0 pF) for a frequency range from 4.0 to 7.0 GHz. The presented low-loss a-Si:H films can be useful for various superconducting quantum applications, which is illustrated by the fabrication of lumped-element bandpass filters with a well-predicted amplitude–frequency response characteristic.
Low-loss microwave components are used in many superconducting resonant circuits from multiplexed readouts of low-temperature detector arrays to quantum bits. Two-level system defects in amorphous dielectric materials cause excess energy loss. In an effort to improve capacitor components, we have used optical lithography and micromachining techniques to develop superconducting parallel-plate capacitors in which lossy dielectrics are replaced by vacuum gaps. Resonance measurements at 50 mK on lumped LC circuits that incorporate these vacuum-gap capacitors (VGCs) reveal loss tangents at low powers as low as4×10−54\times 10^{-5}4×10−5, significantly lower than with capacitors using amorphous dielectrics. VGCs are structurally robust, small, and easily scaled to capacitance values above 100 pF.
The loss in superconducting microwave resonators at low-photon numbers and low temperatures is not well understood but has implications for achievable coherence times in superconducting qubits. We have fabricated single-layer resonators with a high quality factor by patterning a superconducting aluminum film on a sapphire substrate. Four resonator geometries were studied with resonant frequencies ranging from 5 to 7 GHz: a quasi-lumped element resonator, a coplanar strip waveguide resonator, and two hybrid designs that contain both a coplanar strip and a quasi-lumped element. Transmitted power measurements were taken at 30 mK as a function of frequency and probe power. We find that the resonator loss, expressed as the inverse of the internal quality factor, decreases slowly over four decades of photon number in a manner not merely explained by loss from a conventional uniform spatial distribution of two-level systems in an oxide layer on the superconducting surfaces of the resonator.
We have produced high-quality complex microwave circuits, such as multiplexed resonators and superconducting phase qubits, using a “vacuum-gap” technology that eliminates lossy dielectric materials. We have improved our design and fabrication strategy beyond our earlier work, leading to increased yield, enabling the realization of these complex circuits. We incorporate both novel vacuum-gap wiring crossovers for gradiometric inductors and vacuum-gap capacitors (VGC) on chip to produce resonant circuits that have large internal quality factors (30 000<QI<165 000) at 50 mK, outperforming most dielectric-filled devices. Resonators with VGCs as large as 180 pF confirm single mode behavior of our lumped-element components.
We address the scaling-up problem for superconducting quantum circuits by using lumped-element resonators based on an alternative fabrication method of aluminum-aluminum oxide-aluminum (Al-AlOx{\mathrm{AlO}}_{x}AlOx​-Al) parallel-plate capacitors. The size of the resonators is only 0.04mm20.04\phantom{\rule{0.2em}{0ex}}{\mathrm{mm}}^{2}0.04mm2, which is more than one order smaller than the typical size of coplanar resonators (1mm21\phantom{\rule{0.2em}{0ex}}{\mathrm{mm}}^{2}1mm2). The fabrication method we develop easily fits into the standard superconducting qubit fabrication process. We obtain capacitance per area $14\phantom{\rule{0.2em}{0ex}}\mathrm{fF}/\text{\ensuremath{\mu}}{\mathrm{m}}^{2}$ and the internal quality factor $1\ifmmode\times\else\texttimes\fi{}{10}^{3}$--$8\ifmmode\times\else\texttimes\fi{}{10}^{3}$ at the single-photon level. Our results show that such devices based on Al-AlOx{\mathrm{AlO}}_{x}AlOx​-Al capacitors could be further applied to the qubit readout scheme, including resonators, filters, amplifiers, as well as microwave metamaterials and innovative types of qubits, such as $0\ensuremath{-}\ensuremath{\pi}$ qubit.