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arXiv:1708.03530 · Science

Resonantly driven CNOT gate for electron spins

D. M. Zajac, Anthony J. Sigillito, Maximilian Rimbach-Russ, Felix Borjans, Jacob M. Taylor, Guido Burkard, J. R. Petta

Published Dec 7, 2017• 561 citations
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Abstract

Single-qubit rotations and two-qubit CNOT operations are crucial ingredients for universal quantum computing. Although high-fidelity single-qubit operations have been achieved using the electron spin degree of freedom, realizing a robust CNOT gate has been challenging because of rapid nuclear spin dephasing and charge noise. We demonstrate an efficient resonantly driven CNOT gate for electron spins in silicon. Our platform achieves single-qubit rotations with fidelities greater than 99%, as verified by randomized benchmarking. Gate control of the exchange coupling allows a quantum CNOT gate to be implemented with resonant driving in ~200 nanoseconds. We used the CNOT gate to generate a Bell state with 78% fidelity (corrected for errors in state preparation and measurement). Our quantum dot device architecture enables multi-qubit algorithms in silicon.

DOI
10.1126/science.aao5965

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Single-qubit rotations and two-qubit CNOT operations are crucial ingredients for universal quantum computing. Although high-fidelity single-qubit operations have been achieved using the electron spin degree of freedom, realizing a robust CNOT gate has been challenging because of rapid nuclear spin dephasing and charge noise. We demonstrate an efficient resonantly driven CNOT gate for electron spins in silicon. Our platform achieves single-qubit rotations with fidelities greater than 99%, as verified by randomized benchmarking. Gate control of the exchange coupling allows a quantum CNOT gate to be implemented with resonant driving in ~200 nanoseconds. We used the CNOT gate to generate a Bell state with 78% fidelity (corrected for errors in state preparation and measurement). Our quantum dot device architecture enables multi-qubit algorithms in silicon.
The three-qubit Toffoli gate plays an important role in quantum error correction and complex quantum algorithms such as Shor's factoring algorithm, motivating the search for efficient implementations of this gate. Here we introduce a Toffoli gate suitable for exchange-coupled electron spin qubits in silicon quantum dot arrays. Our protocol is a natural extension of a previously demonstrated resonantly driven cnot gate for silicon spin qubits. It is based on a single exchange pulse combined with a resonant microwave drive, with an operation time on the order of 100 ns and fidelity exceeding 99%. We analyze the impact of calibration errors and 1/f1/f1/f noise on the gate fidelity and compare the gate performance to Toffoli gates synthesized from two-qubit gates. Our approach is readily generalized to other controlled three-qubit gates such as the Deutsch and Fredkin gates.
A two-qubit controlled-not (cnot) gate, realized by a controlled-phase (C-phase) gate combined with single-qubit gates, has been experimentally implemented recently for quantum-dot spin qubits in isotopically enriched silicon, a promising solid-state system for practical quantum computation. In the experiments, the single-qubit gates have been demonstrated with fault-tolerant control fidelity, but the infidelity of the two-qubit C-phase gate is, primarily due to the electrical noise, still higher than the required error threshold for fault-tolerant quantum computation (FTQC). Here, by taking the realistic system parameters and the experimental constraints on the control pulses into account, we construct experimentally realizable high-fidelity cnot gates robust against electrical noise with the experimentally measured 1/f1.011/{f}^{1.01}1/f1.01 noise spectrum and also against the uncertainty in the interdot tunnel coupling amplitude. Our fine-tuned optimal cnot gate has about two orders of magnitude improvement in gate infidelity over the ideal C-phase gate constructed without considering any noise effect. Furthermore, within the same control framework, high-fidelity and robust single-qubit gates can also be constructed, paving the way for large-scale FTQC.
Electron spins in silicon quantum dots are a promising platform for fault-tolerant quantum computing. Low-frequency noise, including nuclear spin fluctuations and charge noise, is a primary factor limiting gate fidelities. Suppressing this noise is crucial for high-fidelity qubit operations. Here, we report on a two-qubit quantum device in natural silicon with universal qubit control, designed to investigate the upper limits of gate fidelities in a non-purified Si/SiGe quantum dot device. By employing advanced device structures, qubit manipulation techniques, and optimization methods, we have achieved single-qubit gate fidelities exceeding 99% and a two-qubit controlled-Z (CZ) gate fidelity of 91%. Decoupled CZ gates are used to prepare Bell states with an average fidelity of 91%, typically exceeding previously reported values in natural silicon devices. These results underscore that even natural silicon has the potential to achieve high-fidelity gate operations, particularly with further optimization methods to suppress low-frequency noise.
Abstract Because of their long coherence time and compatibility with industrial foundry processes, electron spin qubits are a promising platform for scalable quantum processors. A full-fledged quantum computer will need quantum error correction, which requires high-fidelity quantum gates. Analyzing and mitigating gate errors are useful to improve gate fidelity. Here, we demonstrate a simple yet reliable calibration procedure for a high-fidelity controlled-rotation gate in an exchange-always-on Silicon quantum processor, allowing operation above the fault-tolerance threshold of quantum error correction. We find that the fidelity of our uncalibrated controlled-rotation gate is limited by coherent errors in the form of controlled phases and present a method to measure and correct these phase errors. We then verify the improvement in our gate fidelities by randomized benchmark and gate-set tomography protocols. Finally, we use our phase correction protocol to implement a virtual, high-fidelity, controlled-phase gate.
Universal quantum computation requires single-qubit control together with at least one entangling two-qubit gate. CNOT and CROT gates are two famous examples of such gates, wherein the state of one qubit (control) dictates the transformation applied to the other (target). By using a simple derivation motivated by symmetry, we show that current device architectures of semiconductor-based quantum dot devices prevent efficient implementation of a CNOT and other asymmetric control-target gates via Heisenberg exchange, Coulomb repulsion, or other interaction that is invariant under spin exchange. Guided by this general principle, we propose a heterogeneous blueprint of double quantum dot devices that enables efficient implementation of the CNOT by breaking the spin exchange symmetry. Crucially, our numerical simulations predict that this novel device blueprint can enable a single-pulse fault-tolerant 100-ns CNOT gate in isotopically purified silicon.
A logical qubit based on electron-spin singlet-triplet states in a semiconductor double dot has emerged as one of the promising candidates for quantum information processing. Here we propose a systematic method to implement rapid quantum gates in the nanosecond time scale for both a single qubit and multiqubits, by applying adiabatic driving pulses with tunable velocity. This yields considerable high-fidelity gate operations reaching 99.999.9%99.9 which are crucial to scalable quantum computation in a semiconductor-based architecture, even considering the demanding experimental constraints and realistic spin and charge noises.