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arXiv:1905.06756 · Physical review. B./Physical review. B

Protocol for a resonantly driven three-qubit Toffoli gate with silicon spin qubits

Michael J. Gullans, J. R. Petta

Published Aug 13, 2019• 40 citations
arXivHTMLPDF

Abstract

The three-qubit Toffoli gate plays an important role in quantum error correction and complex quantum algorithms such as Shor's factoring algorithm, motivating the search for efficient implementations of this gate. Here we introduce a Toffoli gate suitable for exchange-coupled electron spin qubits in silicon quantum dot arrays. Our protocol is a natural extension of a previously demonstrated resonantly driven cnot gate for silicon spin qubits. It is based on a single exchange pulse combined with a resonant microwave drive, with an operation time on the order of 100 ns and fidelity exceeding 99%. We analyze the impact of calibration errors and $1/f$ noise on the gate fidelity and compare the gate performance to Toffoli gates synthesized from two-qubit gates. Our approach is readily generalized to other controlled three-qubit gates such as the Deutsch and Fredkin gates.

DOI
10.1103/physrevb.100.085419

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The family of nnn-bit Toffoli gates, with the two-bit Toffoli gate as the figurehead, are of great interest in quantum information as they can be used as universal gates and in quantum error correction, among other things. We present a single-step implementation of arbitrary nnn-bit Toffoli gates (up to a local change of basis), based on resonantly driving a single qubit that has a strong Ising coupling to nnn other qubits. The setup in the two-qubit case turns out to be identical to the universal Barenco gate. The gate time and error are, in theory, independent of the number of control qubits, scaling better than conventional circuit decompositions. We note that our assumptions, namely, strongly coupling n+1n+1n+1 qubits and a driving frequency that scales with nnn, may break down for large systems. Still, our protocol could enhance the capabilities of intermediate-scale quantum computers, and we discuss the prospects of implementing our protocol on trapped ions, Rydberg atoms, and superconducting circuits. Simulations of the latter platform show that the Toffoli gate with two control bits attains fidelities of above 0.98 even in the presence of decoherence. We also show how similar ideas can be used to make a series of controlled-not gates in a single step. We show how these can speed up the implementation of quantum error correcting codes and we simulate the encoding steps of the three-qubit bit-flip code and the seven-qubit Steane code.
In semiconductor single-spin qubits, high-fidelity quantum gates have been demonstrated; however, achieving consistent performance remains challenging due to variations in driven qubit coherence, which is less explored than free-evolution coherence such as T2∗T_2^*T2∗​. Here, we report single-qubit gate fidelities above 99.999%, achieved by dramatically extending the driven-spin coherence time and suppressing off-resonant driving effects that are detrimental to accurate fidelity benchmarking. We demonstrate that removing proximal reservoirs significantly enhances the spin-locking coherence time (T1ρT_{1ρ}T1ρ​), a critical metric for qubits under microwave driving. Furthermore, we reveal that in typical spin qubit setups using parity readout and rectangular pulses, off-resonant excitation of neighboring qubits causes substantial benchmarking artifacts. By optimizing device conditions to mitigate microwave-induced degradation and implementing spectrally tailored pulse shaping, we achieve a π/2π/2π/2 gate fidelity of 99.99920(2)%, with remaining errors primarily limited by incoherent noise. These results showcase the mechanisms that bound fidelity benchmarking in state-of-the-art silicon spin qubits and provide practical guidelines for achieving and verifying high fidelities in these systems.