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Chinese Physics B

Robust two-qubit gates in silicon double quantum dots with composite pulses and optimized exchange control

Rui Yu, Haoxuan Chen, Chenyi He, Fang Gao, Chengxian Zhang

Published Aug 28, 2026• 0 citations
Publisher

Abstract

Abstract Robust two-qubit gates are essential for scalable silicon spin qubits, but their fidelities are limited by microwave-control imperfections and charge-noise-induced exchange fluctuations. We propose a practical scheme for robust controlled-Z (CZ) and controlled-NOT (CNOT) gates in a silicon double quantum dot. By applying a transverse microwave drive, the effective Hamiltonian can be decomposed into two driven subspaces. In the subspace mainly controlled by the microwave field, a Broadband 1 (BB1) composite pulse is used to suppress errors in the microwave amplitude. In the exchange-assisted subspace, the microwave phases and durations are kept fixed, while a few piecewise-constant exchange amplitudes are optimized by a GRAPE-like procedure. This design reduces the sensitivity to both microwave-amplitude and exchange-amplitude errors while keeping the control waveform simple and experimentally friendly. Numerical simulations show that the optimized CNOT gate reaches a fidelity above 99.99% under experimentally relevant noise strengths, and the CZ gate also maintains a fidelity above 99.9%. These results indicate that combining composite pulses with optimized exchange control provides an experimentally feasible route to robust two-qubit gates in silicon spin qubits.

DOI
10.1088/1674-1056/ae9fc3

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Abstract Robust two-qubit gates are essential for scalable silicon spin qubits, but their fidelities are limited by microwave-control imperfections and charge-noise-induced exchange fluctuations. We propose a practical scheme for robust controlled-Z (CZ) and controlled-NOT (CNOT) gates in a silicon double quantum dot. By applying a transverse microwave drive, the effective Hamiltonian can be decomposed into two driven subspaces. In the subspace mainly controlled by the microwave field, a Broadband 1 (BB1) composite pulse is used to suppress errors in the microwave amplitude. In the exchange-assisted subspace, the microwave phases and durations are kept fixed, while a few piecewise-constant exchange amplitudes are optimized by a GRAPE-like procedure. This design reduces the sensitivity to both microwave-amplitude and exchange-amplitude errors while keeping the control waveform simple and experimentally friendly. Numerical simulations show that the optimized CNOT gate reaches a fidelity above 99.99% under experimentally relevant noise strengths, and the CZ gate also maintains a fidelity above 99.9%. These results indicate that combining composite pulses with optimized exchange control provides an experimentally feasible route to robust two-qubit gates in silicon spin qubits.
A two-qubit controlled-not (cnot) gate, realized by a controlled-phase (C-phase) gate combined with single-qubit gates, has been experimentally implemented recently for quantum-dot spin qubits in isotopically enriched silicon, a promising solid-state system for practical quantum computation. In the experiments, the single-qubit gates have been demonstrated with fault-tolerant control fidelity, but the infidelity of the two-qubit C-phase gate is, primarily due to the electrical noise, still higher than the required error threshold for fault-tolerant quantum computation (FTQC). Here, by taking the realistic system parameters and the experimental constraints on the control pulses into account, we construct experimentally realizable high-fidelity cnot gates robust against electrical noise with the experimentally measured 1/f1.011/{f}^{1.01}1/f1.01 noise spectrum and also against the uncertainty in the interdot tunnel coupling amplitude. Our fine-tuned optimal cnot gate has about two orders of magnitude improvement in gate infidelity over the ideal C-phase gate constructed without considering any noise effect. Furthermore, within the same control framework, high-fidelity and robust single-qubit gates can also be constructed, paving the way for large-scale FTQC.
The fidelity of two-qubit gates using silicon spin qubits is limited by charge noise. When attempting to dynamically compensate for charge noise using single-qubit echo pulses, crosstalk can cause complications. We present a method of using a deep neural network to optimize the components of an analytically designed composite pulse sequence, resulting in a two-qubit gate robust against charge noise errors while also taking crosstalk into account. We analyze two experimentally motivated scenarios. For a scenario with strong electron dipole spin resonance driving and negligible crosstalk, the composite pulse sequence yields up to an order of magnitude improvement over a simple cosine pulse. In a scenario with moderate electron spin resonance driving and appreciable crosstalk such that simple analytical control fields are not effective, optimization using the neural network approach allows one to maintain order-of-magnitude improvement despite the crosstalk.
We propose a universal approach based on Hamiltonian inverse engineering to realize a set of parameterized two-qubit gates. This method possesses unique advantages to simultaneous control of transitions among four energy levels, providing a simpler and effective way to construct composite two-qubit gates with fewer operations than traditional methods. Applied to silicon double quantum dots (DQDs), one can realize a one-step fSim gate and a B gate with only one pulse switch. Of note, the method can be further integrated with various optimization theories to enhance gate performance. Based on quantum optimal control theory, we develop a high-fidelity fSim gate scheme with experimentally feasible pulse shapes, featuring an average gate time of 50 ns and a theoretical fidelity of 99.95% in the presence of decoherence and approximation error. By incorporating geometric quantum gate principles, we propose a combined geometric and dynamic fSim gate scheme. Numerical simulations demonstrate that this hybrid scheme exhibits stronger robustness against systematic errors compared to the purely dynamic approach. Our method is generalizable to arbitrary two-qubit physical systems, offering a feasible pathway for rapidly and robustly constructing composite two-qubit gates.
Achieving high-fidelity two-qubit gates is crucial for spin qubits in silicon-based double quantum dots. However, these gates are sensitive to charge noise in experimental settings, which remains a significant challenge. Geometric gates, which utilize pure geometric phases for gate operations, are a promising approach to achieving robust control. In this work, we theoretically propose a feasible strategy to implement geometric two-qubit gates for silicon-based spin qubits considering experimental control environments. By operating in the suitable region where the local magnetic field gradient is significantly larger than the exchange interaction, we can implement both entangling and nonentangling geometric gates through analytical and numerical methods. It is found that the geometric gates obtained are highly compatible with existing experimental techniques using electric dipole spin resonance in silicon. Moreover, the implemented geometric controlled-ZZZ (CZ) gates can achieve fidelities exceeding 99% under experimental noise levels and the gate times are as short as 20 ns. Our work paves the way for the realization of high-fidelity geometric two-qubit gates for spin qubits in silicon.
Implementing high-fidelity two-qubit gates in single-electron spin qubits in silicon double quantum dots is still a major challenge. In this work we employ analytical methods to design control pulses that generate high-fidelity entangling gates for quantum computers based on this platform. Using realistic parameters and initially assuming a noise-free environment, we present simple control pulses that generate cnot, cphase, and cz gates with average fidelities greater than 99.99% and gate times as short as 45 ns. Moreover, using the local invariants of the system's evolution operator, we show that a simple square pulse generates a cnot gate in less than 27 ns and with a fidelity greater than 99.99%. Last, we use the same analytical methods to generate two-qubit gates locally equivalent to CNOT\sqrt{\mathrm{CNOT}}CNOT​ and CZ\sqrt{\mathrm{CZ}}CZ​ that are used to implement simple two-piece pulse sequences that produce high-fidelity cnot and cz gates in the presence of low-frequency noise.
Scalable quantum computation demands high-fidelity two-qubit gates. However, decoherence and control errors are inevitable, which can decrease the quality of implemented quantum operations. We propose a robust iswap gate protocol for semiconductor spin qubits, which is a promising platform for scalable quantum computing. Our scheme uses only local microwave drives on conventional exchange-coupled spin qubits. This approach simultaneously addresses two critical challenges to semiconductor quantum computing: It suppresses low-frequency noise via continuous dynamical decoupling, and it circumvents the control difficulties associated with the ac modulation of the exchange interaction. We further develop a composite pulse sequence to remove drive-strength constraints and a dynamically corrected method to provide first-order immunity to microwave amplitude errors. Numerical simulations confirm that our scheme can achieve fidelity above the fault-tolerance threshold under current experimental conditions, offering a building block for practical quantum processors.