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arXiv:1609.06116 · Applied Physics Letters

Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers

Michael Shcherbatenko, I. Tretyakov, Yu. Lobanov, S. N. Maslennikov, N. Kaurova, Matvey I. Finkel, B. Voronov, G. Goltsman, T. M. Klapwijk

Published Sep 26, 2016• 14 citations
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Abstract

We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device.

DOI
10.1063/1.4963691

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We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device.
Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling.
We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both low and high bias and for small as well as large devices. It is assumed that the current dependence is due to vortex-antivortex unbinding as described in the Berezinskii–Kosterlitz–Thouless theory. The presented approach will be useful in guiding device optimization for noise and bandwidth.
Response time of a Superconducting Hot Electron Bolometer (HEB) mixers is a critical parameter, and significantly affects the intermediate frequency (IF) gain bandwidth. In this study, we investigated the effects of temperature and bias voltage on the response time. Response time of superconducting niobium nitride (NbN) HEB mixers were measured by using the pumpprobe technique at temperatures of 5 K, 7 K, and 9 K with different bias voltages. The measured response time ranged from 50 to 80 ps and decreased with increasing temperature and bias voltage. This approach provides a more comprehensive understanding of the thermal transport mechanisms in superconducting HEB mixers, which can ultimately lead to improved performance and properties of the HEB mixers.
An experimental study is presented of the output noise in hot-electron superconducting NbN bolometer mixers. Fluctuations of the electron temperature have been shown to be the main source of electrical noise. The rolloff frequency of the spectral noise density corresponds well to the inverse electron temperature relaxation time (≊230 ps). Equivalent noise data have been obtained for the device at a physical temperature within superconducting transition region, and at a somewhat lower physical temperature with the device pumped by 350 GHz radiation to reach the same operating point. The single sideband (SSB) mixer noise temperature due to intrinsic noise mechanisms for the NbN device is estimated to 360 K independent of radiation frequency. A larger critical current density may promote a further reduction of the intrinsic conversion loss of the mixer device.
We present theoretical analysis of the performance of a superconducting hot-electron bolometer mixer with electron cooling due to electron phonon interaction. The analysis is based on a complete set of thermal balance equations for phonons and electrons. A non-thermal action of a dc current has been considered phenomenologically using an analytical fit of isothermal current-voltage characteristics of the mixer. The operation point of the mixer has been determined as a result of the heating by both the power of a local oscillator and the power dissipated by the current. Electron temperature fluctuations, Nyquist noise, and shot noise have been supposed to only contribute to the mixer noise. The conversion gain and the noise temperature of the mixer have been evaluated taking into account an electro-thermal feedback between the mixer and an intermediate frequency circuit with an arbitrary impedance. We have obtained general expressions for the conversion gain, noise temperature and impedance which enabled us to estimate ultimate performance of a superconducting hot-electron bolometer mixer. Theoretical predictions are in good agreement with experimental results obtained for a NbN hot-electron bolometer mixer at a radiation frequency of 2.5 THz.