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arXiv:1510.01876 · Journal of Low Temperature Physics

Uniform Non-stoichiometric Titanium Nitride Thin Films for Improved Kinetic Inductance Detector Arrays

Grégoire Coiffard, Karl-Friedrich Schuster, E. F. C. Driessen, Stéphane Pignard, Martino Calvo, Andrea Catalano, J. Goupy, A. Monfardini

Published Jan 21, 2016• 13 citations
arXivHTMLPDF
DOI
10.1007/s10909-016-1489-9

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We report on the investigation of titanium nitride (TiN) thin films deposited via atomic layer deposition (ALD) for microwave kinetic inductance detectors (MKID). Using our in-house ALD process, we have grown a sequence of TiN thin films (thickness 15, 30, 60 nm). The films have been characterised in terms of superconducting transition temperature TcT_\mathrm{c}Tc​ , sheet resistance RsR_\mathrm{s}Rs​ and microstructure. We have fabricated test resonator structures and characterised them at a temperature of 300 mK. At 350 GHz, we report an optical noise equivalent power NEPopt≈2.3×10−15 W/Hz\hbox {NEP}_\mathrm{opt} \approx 2.3\times 10^{-15}~\hbox {W}/\sqrt{\hbox {Hz}}NEPopt​≈2.3×10−15 W/Hz​ , which is promising for passive terahertz imaging applications.
Abstract Low microwave loss and regulatable kinetic inductance are two key characteristics of superconducting films to manufacture high-performance quantum devices. Epitaxial titanium nitride (TiN) thin films have been found to exhibit significant advantages in these two aspects. In this paper, we investigated into the dielectric loss and kinetic inductance of epitaxial TiN films, which were prepared on both silicon and sapphire substrates with different temperatures. Crystal structure, surface morphology, and superconducting properties were characterized systematically. The radio-frequency response of microwave resonators made of TiN films was studied at low temperatures to extract the information of kinetic inductance and quality factor. We obtained the highest internal quality factor up to 1.6 × 10 6 at single photon regime and achieved a regulation of kinetic inductance exceeding 16 times by altering the substrate and the sputtering temperature of the TiN films. This work not only provides an essential foundation for the precise design and preparation of low-loss TiN resonators for superconducting quantum bits, but also demonstrates TiN film as an excellent material platform with both low microwave loss and high kinetic inductance that can be applied in other fields such as microwave kinetic inductance detectors.
We have fabricated 2024 pixel microwave kinetic inductance detector (MKID) arrays in the ultraviolet/optical/ near-IR (UVOIR) regime that are currently in use in astronomical instruments. In order to make MKIDs desirable for novel instruments, larger arrays with nearly perfect yield need to be fabricated. As array size increases, however, the percent yield often decreases due to frequency collisions in the readout. The per-pixel performance must also be improved, namely, the energy resolution. We are investigating ways to reduce frequency collisions and to improve the per-pixel performance of our devices through new superconducting material systems and fabrication techniques. There are two main routes that we are currently exploring. First, we are attempting to create more uniform titanium nitride films through the use of atomic layer deposition rather than the more traditional sputtering method. In addition, we are experimenting with completely new material systems for MKIDs, such as platinum silicide.