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arXiv:2509.14133 · Physica B Condensed Matter

Room temperature reactive sputtering deposition of titanium nitride with high sheet kinetic inductance

Juliang Li, Peter S. Barry, Thomas Cecil, M. Lisovenko, Volodymyr G. Yefremenko, Gensheng Wang, Serhii Kruhlov, Goran Tripun Karapetrov, C. L. Chang

Published Jun 23, 2026• 0 citations
arXivHTMLPDF
DOI
10.1016/j.physb.2026.418921

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We report on the investigation of titanium nitride (TiN) thin films deposited via atomic layer deposition (ALD) for microwave kinetic inductance detectors (MKID). Using our in-house ALD process, we have grown a sequence of TiN thin films (thickness 15, 30, 60 nm). The films have been characterised in terms of superconducting transition temperature $$T_\mathrm{c}$$ , sheet resistance $$R_\mathrm{s}$$ and microstructure. We have fabricated test resonator structures and characterised them at a temperature of 300 mK. At 350 GHz, we report an optical noise equivalent power $$\hbox {NEP}_\mathrm{opt} \approx 2.3\times 10^{-15}~\hbox {W}/\sqrt{\hbox {Hz}}$$ , which is promising for passive terahertz imaging applications.

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Abstract We investigate thin films of conducting aluminium-oxide, also known as granular aluminium, as a material for superconducting high quality, high kinetic inductance circuits. The films are deposited by an optimised reactive DC magnetron sputter process and characterised using microwave measurement techniques at milli-Kelvin temperatures. We show that, by precise control of the reactive sputter conditions, a high room temperature sheet resistance and therefore high kinetic inductance at low temperatures can be obtained. For a coplanar waveguide resonator with 1.5 kΩ sheet resistance and a kinetic inductance fraction close to unity, we measure a quality factor in the order of 700 000 at 20 mK. Furthermore, we observe a sheet resistance reduction by gentle heat treatment in air. This behaviour is exploited to study the kinetic inductance change using the microwave response of a coplanar wave guide resonator. We find the correlation between the kinetic inductance and the sheet resistance to be in good agreement with theoretical expectations.
We report a novel method of growing strongly disordered superconducting titanium nitride (TiN) thin films by reactive electron-beam deposition. The normal state sheet resistance and superconducting critical temperature (Tc) can be tuned by controlling the deposition pressure in the range of 1.1×10−6–3.1×10−5mbar. For 10nm thick films, the sheet resistance (R□) reaches 1361Ω/□ and Tc=0.77K, which translates into an estimate for the sheet inductance as large as L□=2.4nH/□. Benefiting from the directionality of reactive evaporation, we fabricated RF test devices with micrometer-sized dimensions using a resist mask and a lift-off process, which would be difficult with sputtering or atomic layer deposition methods. The spectroscopic measurements result in consistent sheet inductance values in two different device geometries, and the quality factors ranged from Q = 300 to 2200. The loss is possibly due to the presence of titanium oxynitride (TiNxOy) in the morphological composition of our films. The flexibility of the lift-off process suggests applications of reactively evaporated TiN for making supporting structures around quantum circuits, such as readout resonators or compact on-chip filters.
We report on the investigation of titanium nitride (TiN) thin films deposited via atomic layer deposition (ALD) for microwave kinetic inductance detectors (MKID). Using our in-house ALD process, we have grown a sequence of TiN thin films (thickness 15, 30, 60 nm). The films have been characterised in terms of superconducting transition temperature TcT_\mathrm{c}Tc​ , sheet resistance RsR_\mathrm{s}Rs​ and microstructure. We have fabricated test resonator structures and characterised them at a temperature of 300 mK. At 350 GHz, we report an optical noise equivalent power NEPopt≈2.3×10−15 W/Hz\hbox {NEP}_\mathrm{opt} \approx 2.3\times 10^{-15}~\hbox {W}/\sqrt{\hbox {Hz}}NEPopt​≈2.3×10−15 W/Hz​ , which is promising for passive terahertz imaging applications.