arXiv:1408.4347 · Superconductor Science and Technology
Aluminium-oxide wires for superconducting high kinetic inductance circuits
Hannes Rotzinger, Sebastian T. Skacel, Marco Pfirrmann, Jan Nicolas Voss, Julian Münzberg, S Probst, Pavel A. Bushev, Martin P. Weides, Alexey Vladimirovich Ustinov, Johan E. Mooij
Abstract We investigate thin films of conducting aluminium-oxide, also known as granular aluminium, as a material for superconducting high quality, high kinetic inductance circuits. The films are deposited by an optimised reactive DC magnetron sputter process and characterised using microwave measurement techniques at milli-Kelvin temperatures. We show that, by precise control of the reactive sputter conditions, a high room temperature sheet resistance and therefore high kinetic inductance at low temperatures can be obtained. For a coplanar waveguide resonator with 1.5 kΩ sheet resistance and a kinetic inductance fraction close to unity, we measure a quality factor in the order of 700 000 at 20 mK. Furthermore, we observe a sheet resistance reduction by gentle heat treatment in air. This behaviour is exploited to study the kinetic inductance change using the microwave response of a coplanar wave guide resonator. We find the correlation between the kinetic inductance and the sheet resistance to be in good agreement with theoretical expectations.
Abstract We investigate thin films of conducting aluminium-oxide, also known as granular aluminium, as a material for superconducting high quality, high kinetic inductance circuits. The films are deposited by an optimised reactive DC magnetron sputter process and characterised using microwave measurement techniques at milli-Kelvin temperatures. We show that, by precise control of the reactive sputter conditions, a high room temperature sheet resistance and therefore high kinetic inductance at low temperatures can be obtained. For a coplanar waveguide resonator with 1.5 kΩ sheet resistance and a kinetic inductance fraction close to unity, we measure a quality factor in the order of 700 000 at 20 mK. Furthermore, we observe a sheet resistance reduction by gentle heat treatment in air. This behaviour is exploited to study the kinetic inductance change using the microwave response of a coplanar wave guide resonator. We find the correlation between the kinetic inductance and the sheet resistance to be in good agreement with theoretical expectations.
Superconducting planar resonators of thin molybdenum carbide (MoC) films were fabricated by optical lithography. The films were deposited via reactive magnetron sputtering and by changing the deposition parameters, the sheet resistance of the films was varied. The microwave properties of the resonators were studied by broadband coplanar waveguide spectroscopy in flip-chip configuration. The kinetic inductance of MoC films governs the high frequency response of the resonators and is determined by the complex conductivity of the superconducting film. Well below the critical temperature of transition, kinetic inductance is proportional to film sheet resistance in normal state. The temperature-dependent resonances in the broadband spectra below critical temperature are described by a lumped LC model, where the inductance consists of geometric and kinetic inductance of the resonator. The temperature and frequency dependent complex conductivity of the superconducting film is calculated by the Dynes model for dirty superconductors. Furthermore, a numerical model of the kinetic planar resonator in Sonnet software is presented, which can be utilized to design resonators with desired properties, based on highly disordered superconductors. An on-chip design of a kinetic planar resonator filter is presented. The high kinetic inductance of the superconducting films allows us to minimize microwave filter dimensions.
Superconducting high kinetic inductance elements constitute a valuable resource for quantum circuit design and millimeter-wave detection. Granular aluminum (grAl) in the superconducting regime is a particularly interesting material since it has already shown a kinetic inductance in the range of nH/□ and its deposition is compatible with conventional Al/AlOx/Al Josephson junction fabrication. We characterize microwave resonators fabricated from grAl with a room temperature resistivity of 4×10^{3} μΩ cm, which is a factor of 3 below the superconductor to insulator transition, showing a kinetic inductance fraction close to unity. The measured internal quality factors are on the order of Q_{i}=10^{5} in the single photon regime, and we demonstrate that nonequilibrium quasiparticles (QPs) constitute the dominant loss mechanism. We extract QP relaxation times in the range of 1 s and we observe QP bursts every ∼20 s. The current level of coherence of grAl resonators makes them attractive for integration in quantum devices, while it also evidences the need to reduce the density of nonequilibrium QPs.
Tantalum (Ta) has recently received considerable attention in manufacturing robust superconducting quantum circuits. Ta offers low microwave loss, high kinetic inductance compared to aluminium (Al) and niobium (Nb), and good compatibility with complementary metal-oxide-semiconductor (CMOS) technology, which is essential for quantum computing applications. Here, we demonstrate the fabrication engineering of thickness-dependent high quality factor (high-Q_i) Ta superconducting microwave coplanar waveguide resonators. All films are deposited on high-resistivity silicon substrates at room temperature without additional substrate heating. Before Ta deposition, a niobium (Nb) seed layer is used to ensure a body-centred cubic lattice (α-Ta) formation. We further engineer the kinetic inductance (L_K) resonators by varying Ta film thicknesses. High L_K is a key advantage for applications because it facilitates the realisation of high-impedance, compact quantum circuits with enhanced coupling to qubits. The maximum internal quality factor Q_i of ~ 3.6 * 10^6 is achieved at the high power regime for 100 nm Ta, while the highest kinetic inductance is obtained to be 0.6 pH/sq for the thinnest film, which is 40 nm. This combination of high Q_i and high L_K highlights the potential of Ta microwave circuits for high-fidelity operations of compact quantum circuits.
Abstract Tantalum (Ta) has recently received considerable attention in manufacturing robust superconducting quantum circuits. Ta offers low microwave loss, high kinetic inductance compared to aluminium (Al) and niobium (Nb), and good compatibility with complementary metal-oxide-semiconductor (CMOS) technology, which is essential for quantum computing applications. Here we demonstrate the fabrication engineering of thickness-dependent high-quality-factor (high- Qi ) Ta superconducting microwave coplanar waveguide resonators. All films are deposited on high-resistivity silicon substrates at room temperature without additional substrate heating. Before Ta deposition, a niobium (Nb) seed layer is used to promote a body-centred cubic lattice ( α -Ta) formation. We further engineer the kinetic inductance ( LK ) of the resonators by varying Ta film thicknesses. High LK is a key advantage for applications because it facilitates the realisation of high-impedance, compact quantum circuits with enhanced coupling to qubits. The maximum internal quality factor Qi of ∼ 3.6 × 10 6 in the high power regime and Qi of ∼ 4.5 × 10 5 in the single-photon regime is achieved for 100 nm Ta which represents an improvement over previous room-temperature deposited Ta resonators on silicon substrates in the single photon regime, while the highest kinetic inductance of 0.6 pH/sq is obtained for the thinnest film, which is 40 nm. This combination of high Qi and high LK highlights the potential of Ta microwave circuits for high-fidelity operation of compact quantum circuits.
Recently, a new kind of distributed element superconducting resonators with granular aluminum (grAl) has been developed for circuit quantum electrodynamics. Given that lumped element resonators possess certain advantages over the distributed element ones, in this paper, we use a relatively simple micro-nanotechnology, without the etching process, to fabricate the designed lumped element superconducting grAl resonators. They are deposited on silicon substrates by DC magnetron sputtering of pure Al in an atmosphere of Ar and O2. By cryogenic microwave transmission measurements, at a temperature of 50 mK, we find that, compared with a usual Al resonator of the same size, such a device shows significantly strong nonlinearity and thus higher kinetic inductance. The noise features, quality factors, and temperature-dependence of the resonant frequencies have been investigated experimentally. It is believed that the lumped element superconducting resonators with high kinetic inductance demonstrated here could also be applied to superconducting quantum computation and photon counting in the future.
We describe measurements of the properties, at dc, gigahertz, and terahertz frequencies, of thin (10 nm) aluminum films with 10 Omega/square normal state sheet resistance. Such films can be applied to construct microwave kinetic inductance detector arrays for submillimeter and far-infrared astronomical applications in which incident power excites quasiparticles directly in a superconducting resonator that is configured to present a matched-impedance to the high frequency radiation being detected. For films 10 nm thick, we report normal state sheet resistance, resistance-temperature curves for the superconducting transition, quality factor and kinetic inductance fraction for microwave resonators made from patterned films, and terahertz measurements of sheet impedance measured with a Fourier Transform Spectrometer. We compare properties with similar resonators made from niobium 600 nm thick.