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Bulletin of the American Physical Society

Applications of Thin Film Atomic Layer Deposition Superconducting Titanium Nitride to Astronomical Measurements

Calder D. Sheagren, Peter S. Barry, R. Basu Thakur, Rong Nie, Erik D. Shirokoff, Qing Tang

Published Mar 8, 2019• 0 citations
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We report on the investigation of titanium nitride (TiN) thin films deposited via atomic layer deposition (ALD) for microwave kinetic inductance detectors (MKID). Using our in-house ALD process, we have grown a sequence of TiN thin films (thickness 15, 30, 60 nm). The films have been characterised in terms of superconducting transition temperature $$T_\mathrm{c}$$ , sheet resistance $$R_\mathrm{s}$$ and microstructure. We have fabricated test resonator structures and characterised them at a temperature of 300 mK. At 350 GHz, we report an optical noise equivalent power $$\hbox {NEP}_\mathrm{opt} \approx 2.3\times 10^{-15}~\hbox {W}/\sqrt{\hbox {Hz}}$$ , which is promising for passive terahertz imaging applications.

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Bulletin of the American Physical Society•Mar 5, 2014•0 citations
We report on the investigation of titanium nitride (TiN) thin films deposited via atomic layer deposition (ALD) for microwave kinetic inductance detectors (MKID). Using our in-house ALD process, we have grown a sequence of TiN thin films (thickness 15, 30, 60 nm). The films have been characterised in terms of superconducting transition temperature TcT_\mathrm{c}Tc​ , sheet resistance RsR_\mathrm{s}Rs​ and microstructure. We have fabricated test resonator structures and characterised them at a temperature of 300 mK. At 350 GHz, we report an optical noise equivalent power NEPopt≈2.3×10−15 W/Hz\hbox {NEP}_\mathrm{opt} \approx 2.3\times 10^{-15}~\hbox {W}/\sqrt{\hbox {Hz}}NEPopt​≈2.3×10−15 W/Hz​ , which is promising for passive terahertz imaging applications.
Superconducting qubits are a promising platform for large-scale quantum computing. Besides the Josephson junction, most parts of a superconducting qubit are made of a planar, patterned superconducting thin films. In the past, most qubit architectures have relied on niobium (Nb) as the material of choice for the superconducting layer. However, there is also a variety of alternative materials with potentially less losses, which may thereby result in increased qubit performance. One such material is tantalum (Ta), for which high-performance qubit components have already been demonstrated. In this study, we report the sputter-deposition of Ta thin films directly on heated and unheated silicon (Si) substrates as well as onto different, nanometer-thin seed layers from tantalum nitride (TaN), titanium nitride (TiN) or aluminum nitride (AIN) that were deposited first. The thin films are characterized in terms of surface morphology, crystal structure, phase composition, critical temperature, residual resistance ratio (RRR) and RF-performance. We obtain thin films indicative of pure alpha-Ta for high temperature (600°C) sputtering directly on silicon and for Ta deposited on TaN or TiN seed layers. Coplanar waveguide (CPW) resonator measurements show that the Ta deposited directly on the heated silicon substrate performs best with internal quality factors Qi reaching 1xl06in the single-photon regime, measured at T=100 mK.
We report a novel method of growing strongly disordered superconducting titanium nitride (TiN) thin films by reactive electron-beam deposition. The normal state sheet resistance and superconducting critical temperature (Tc) can be tuned by controlling the deposition pressure in the range of 1.1×10−6–3.1×10−5mbar. For 10nm thick films, the sheet resistance (R□) reaches 1361Ω/□ and Tc=0.77K, which translates into an estimate for the sheet inductance as large as L□=2.4nH/□. Benefiting from the directionality of reactive evaporation, we fabricated RF test devices with micrometer-sized dimensions using a resist mask and a lift-off process, which would be difficult with sputtering or atomic layer deposition methods. The spectroscopic measurements result in consistent sheet inductance values in two different device geometries, and the quality factors ranged from Q = 300 to 2200. The loss is possibly due to the presence of titanium oxynitride (TiNxOy) in the morphological composition of our films. The flexibility of the lift-off process suggests applications of reactively evaporated TiN for making supporting structures around quantum circuits, such as readout resonators or compact on-chip filters.