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arXiv:1508.01223 · Physical Review Letters

Reduced Sensitivity to Charge Noise in Semiconductor Spin Qubits via Symmetric Operation

M. D. Reed, Brett Maune, Reed W. Andrews, Matthew Borselli, Kevin Eng, Michael P. Jura, Andrey A. Kiselev, Thaddeus D. Ladd, Seth Merkel, I. Milosavljevic, Emily Pritchett, Matthew T. Rakher, Richard S. Ross, A. E. Schmitz, Aaron C.T. Smith, J. A. Wright, Mark F. Gyure, A. T. Hunter

Published Mar 16, 2016• 301 citations
arXivHTMLPDF

Abstract

We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge noise. The method involves biasing a double dot symmetrically between the charge-state anticrossings, where the derivative of the exchange energy with respect to gate voltages is minimized. Exchange remains highly tunable by adjusting the tunnel coupling. We find that this method reduces the dephasing effect of charge noise by more than a factor of 5 in comparison to operation near a charge-state anticrossing, increasing the number of observable exchange oscillations in our qubit by a similar factor. Performance also improves with exchange rate, favoring fast quantum operations.

DOI
10.1103/physrevlett.116.110402

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We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge noise. The method involves biasing a double dot symmetrically between the charge-state anticrossings, where the derivative of the exchange energy with respect to gate voltages is minimized. Exchange remains highly tunable by adjusting the tunnel coupling. We find that this method reduces the dephasing effect of charge noise by more than a factor of 5 in comparison to operation near a charge-state anticrossing, increasing the number of observable exchange oscillations in our qubit by a similar factor. Performance also improves with exchange rate, favoring fast quantum operations.
Quantum dot-based quantum computation employs extensively the exchange interaction between nearby electronic spins in order to manipulate and couple different qubits. The exchange interaction, however, couples the qubit states to charge noise, which reduces the fidelity of the quantum gates that employ it. The effect of charge noise can be mitigated by working at noise sweetspots in which the sensitivity to charge variations is reduced. In this work we study the response to charge noise of a double quantum dot based qubit in the presence of ac gates, with arbitrary driving amplitudes, applied either to the dot levels or to the tunneling barrier. Tuning with an ac driving allows to manipulate the sign and strength of the exchange interaction as well as its coupling to environmental electric noise. Moreover, we show the possibility of inducing a second-order sweetspot in the resonant spin-triplet qubit in which the dephasing time is significantly increased.
It has been recently demonstrated that a singlet-triplet spin qubit in semiconductor double quantum dots can be controlled by changing the height of the potential barrier between the two dots (barrier control), which has led to a considerable reduction of charge noises as compared to the traditional tilt control method. In this paper we show, through a molecular-orbital-theoretic calculation of double quantum dots influenced by a charged impurity, that the relative charge noise for a system under the barrier control not only is smaller than that for the tilt control, but actually decreases as a function of an increasing exchange interaction. This is understood as a combined consequence of the greatly suppressed detuning noise when the two dots are symmetrically operated, as well as an enhancement of the inter-dot hopping energy of an electron when the barrier is lowered which in turn reduces the relative charge noise at large exchange interaction values. We have also studied the response of the qubit to charged impurities at different locations, and found that the improvement of barrier control is least for impurities equidistant from the two dots due to the small detuning noise they cause, but is otherwise significant along other directions.
It has been recently demonstrated that a singlet-triplet spin qubit in semiconductor double quantum dots can be controlled by changing the height of the potential barrier between the two dots (``barrier control''), which has led to a considerable reduction of charge noises as compared with the traditional tilt control method. In this paper we show, through a molecular-orbital-theoretic calculation of double quantum dots influenced by a charged impurity, that the relative charge noise for a system under the barrier control not only is smaller than that for the tilt control but actually decreases as a function of an increasing exchange interaction. This is understood as a combined consequence of the greatly suppressed detuning noise when the two dots are symmetrically operated, as well as an enhancement of the interdot hopping energy of an electron when the barrier is lowered which in turn reduces the relative charge noise at large exchange interaction values. We have also studied the response of the qubit to charged impurities at different locations and found that the improvement of barrier control is least for impurities equidistant from the two dots due to the small detuning noise they cause but is otherwise significant along other directions.
We demonstrate a substantial improvement in the spin-exchange gate using symmetric control instead of conventional detuning in GaAs spin qubits, up to a factor of six increase in the quality factor of the gate. For symmetric operation, nanosecond voltage pulses are applied to the barrier that controls the interdot potential between quantum dots, modulating the exchange interaction while maintaining symmetry between the dots. Excellent agreement is found with a model that separately includes electrical and nuclear noise sources for both detuning and symmetric gating schemes. Unlike exchange control via detuning, the decoherence of symmetric exchange rotations is dominated by rotation-axis fluctuations due to nuclear field noise rather than direct exchange noise.
The resonant exchange (RX) qubit is a promising variant of the exchange-only spin qubit in a triple quantum dot which responds to a narrow-band resonant frequency. But the advantage of a permanently applied exchange splitting for spin control generally entails an increased susceptibility to charge noise. We have investigated the influence of electrical charge noise on a resonant exchange (RX) qubit by taking into account uncorrelated noise in each quantum dot, giving rise to two independent noisy bias parameters e and ∆ [1]. Calculating the energy splitting of the two qubit states as a function of these two bias detuning parameters, we have identified sweet spots, where the qubit is least susceptible to noise. Our investigation shows that the sweet spots exist within the low-bias regime, in which the bias detuning parameters have the same magnitude as the hopping parameters between the dots. By calculating and comparing the charge dephasing rates at the various operating points of the RX qubit, we identify a new favorable operating regime for the RX qubit in the case of weak noise, based on these double sweet spots. In contrast, spin noise can be mitigated using exchange-based dynamical decoupling sequences that have been optimized using two different strategies, Uhrig dynamical decoupling (UDD) and optimized filter function dynamical decoupling (OFDD) [2]. Finally, we give a brief outlook towards the possibility of long-distance coupling between resonant exchange qubits mediated by a microwave cavity [3]. [1] M. Russ and G. Burkard, Phys. Rev. B 91, 235411 (2015). [2] N. Rohling and G. Burkard, arXiv:1510.04098. [3] M. Russ and G. Burkard, Phys. Rev. B (accepted) [arXiv:1508.07122].
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of the existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit's energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced spin-orbit interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a comodeling framework for double quantum dot (DQD) devices and their charge noise environments. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods, and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two-qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97>97%>97 in the simulated Si-MOS devices at a typical TLF density of ${10}^{11}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 9191%91 in the presence of the same density of TLFs. We further investigate the one- and two-qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities, which can compromise the device yields in scaled qubit technologies.