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arXiv:1505.07847 · Physical Review B

Exact CNOT gates with a single nonlocal rotation for quantum-dot qubits

Arijeet Pal, Emmanuel I. RASHBA, Bertrand I. Halperin

Published Sep 9, 2015• 17 citations
arXivHTMLPDF

Abstract

This theoretical study provides an exact implementation of the CNOT two-qubit gate operation between capacitively coupled exchange-only qubits defined by three electrons in triple quantum dots. The authors show that the CNOT gate can be implemented by tuning three parameters: the two single-qubit exchange splittings, and the duration of the pulse.

DOI
10.1103/physrevb.92.125409

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This theoretical study provides an exact implementation of the CNOT two-qubit gate operation between capacitively coupled exchange-only qubits defined by three electrons in triple quantum dots. The authors show that the CNOT gate can be implemented by tuning three parameters: the two single-qubit exchange splittings, and the duration of the pulse.
Single-qubit rotations and two-qubit CNOT operations are crucial ingredients for universal quantum computing. Although high-fidelity single-qubit operations have been achieved using the electron spin degree of freedom, realizing a robust CNOT gate has been challenging because of rapid nuclear spin dephasing and charge noise. We demonstrate an efficient resonantly driven CNOT gate for electron spins in silicon. Our platform achieves single-qubit rotations with fidelities greater than 99%, as verified by randomized benchmarking. Gate control of the exchange coupling allows a quantum CNOT gate to be implemented with resonant driving in ~200 nanoseconds. We used the CNOT gate to generate a Bell state with 78% fidelity (corrected for errors in state preparation and measurement). Our quantum dot device architecture enables multi-qubit algorithms in silicon.
We consider a model of two interacting always-on, exchange-only qubits for which controlled phase (CPHASE), controlled NOT (CNOT), quantum Fourier transform (QFT) and SWAP operations can be implemented only in a few electrical pulses in a nanosecond time scale. Each qubit is built of three quantum dots (TQD) in a triangular geometry with three electron spins which are always kept coupled by exchange interactions only. The qubit states are encoded in a doublet subspace and are fully electrically controlled by a voltage applied to gate electrodes. The two qubit quantum gates are realized by short electrical pulses which change the triangular symmetry of TQD and switch on exchange interaction between the qubits. We found an optimal configuration to implement the CPHASE gate by a single pulse of the order 2.3 ns. Using this gate, in combination with single qubit operations, we searched for optimal conditions to perform the other gates: CNOT, QFT and SWAP. Our studies take into account environment effects and leakage processes as well. The results suggest that the system can be implemented for fault tolerant quantum computations.
We design efficient controlled-rotation gates with arbitrary angle acting on three-spin encoded qubits for exchange-only quantum computation. Two pulse sequence constructions are given. The first is motivated by an analytic derivation of the efficient Fong-Wandzura sequence for an exact cnot gate. This derivation, briefly reviewed here, is based on elevating short sequences of swap pulses to an entangling two-qubit gate. To go beyond cnot, we apply a similar elevation to a modified short sequence consisting of swaps and one pulse of arbitrary duration. This results in two-qubit sequences that carry out controlled-rotation gates of arbitrary angle. The second construction streamlines a class of arbitrary cphase gates established earlier. Both constructions are based on building two-qubit sequences out of subsequences with special properties that render each step of the construction analytically tractable.
Abstract The implementation of high fidelity two-qubit gates is a bottleneck in the progress toward universal quantum computation in semiconductor quantum dot qubits. We study capacitive coupling between two triple quantum dot spin qubits encoded in the S = 1/2, Sz = −1/2 decoherence-free subspace—the exchange-only (EO) spin qubits. We report exact gate sequences for CPHASE and CNOT gates, and demonstrate theoretically, the existence of multiple two-qubit sweet spots (2QSS) in the parameter space of capacitively coupled EO qubits. Gate operations have the advantage of being all-electrical, but charge noise that couple to electrical parameters of the qubits cause decoherence. Assuming noise with a 1/f spectrum, two-qubit gate fidelities and times are calculated, which provide useful information on the noise threshold necessary for fault-tolerance. We study two-qubit gates at single and multiple parameter 2QSS. In particular, for two existing EO implementations—the resonant exchange (RX) and the always-on exchange-only (AEON) qubits—we compare two-qubit gate fidelities and times at positions in parameter space where the 2QSS are simultaneously single-qubit sweet spots (1QSS) for the RX and AEON. These results provide a potential route to the realization of high fidelity quantum computation.
Universal quantum computation requires single-qubit control together with at least one entangling two-qubit gate. CNOT and CROT gates are two famous examples of such gates, wherein the state of one qubit (control) dictates the transformation applied to the other (target). By using a simple derivation motivated by symmetry, we show that current device architectures of semiconductor-based quantum dot devices prevent efficient implementation of a CNOT and other asymmetric control-target gates via Heisenberg exchange, Coulomb repulsion, or other interaction that is invariant under spin exchange. Guided by this general principle, we propose a heterogeneous blueprint of double quantum dot devices that enables efficient implementation of the CNOT by breaking the spin exchange symmetry. Crucially, our numerical simulations predict that this novel device blueprint can enable a single-pulse fault-tolerant 100-ns CNOT gate in isotopically purified silicon.