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arXiv:2103.15681 · npj Quantum Information

Two-qubit sweet spots for capacitively coupled exchange-only spin qubits

MengKe Feng, Lin Htoo Zaw, Teck Seng Koh

Published Jul 16, 2021• 4 citations
arXivHTMLPDF

Abstract

Abstract The implementation of high fidelity two-qubit gates is a bottleneck in the progress toward universal quantum computation in semiconductor quantum dot qubits. We study capacitive coupling between two triple quantum dot spin qubits encoded in the S = 1/2, Sz = −1/2 decoherence-free subspace—the exchange-only (EO) spin qubits. We report exact gate sequences for CPHASE and CNOT gates, and demonstrate theoretically, the existence of multiple two-qubit sweet spots (2QSS) in the parameter space of capacitively coupled EO qubits. Gate operations have the advantage of being all-electrical, but charge noise that couple to electrical parameters of the qubits cause decoherence. Assuming noise with a 1/f spectrum, two-qubit gate fidelities and times are calculated, which provide useful information on the noise threshold necessary for fault-tolerance. We study two-qubit gates at single and multiple parameter 2QSS. In particular, for two existing EO implementations—the resonant exchange (RX) and the always-on exchange-only (AEON) qubits—we compare two-qubit gate fidelities and times at positions in parameter space where the 2QSS are simultaneously single-qubit sweet spots (1QSS) for the RX and AEON. These results provide a potential route to the realization of high fidelity quantum computation.

DOI
10.1038/s41534-021-00449-4

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arXiv:1812.03177•npj Quantum Information•Sep 2, 2019•28 citations
Abstract The implementation of high fidelity two-qubit gates is a bottleneck in the progress toward universal quantum computation in semiconductor quantum dot qubits. We study capacitive coupling between two triple quantum dot spin qubits encoded in the S = 1/2, Sz = −1/2 decoherence-free subspace—the exchange-only (EO) spin qubits. We report exact gate sequences for CPHASE and CNOT gates, and demonstrate theoretically, the existence of multiple two-qubit sweet spots (2QSS) in the parameter space of capacitively coupled EO qubits. Gate operations have the advantage of being all-electrical, but charge noise that couple to electrical parameters of the qubits cause decoherence. Assuming noise with a 1/f spectrum, two-qubit gate fidelities and times are calculated, which provide useful information on the noise threshold necessary for fault-tolerance. We study two-qubit gates at single and multiple parameter 2QSS. In particular, for two existing EO implementations—the resonant exchange (RX) and the always-on exchange-only (AEON) qubits—we compare two-qubit gate fidelities and times at positions in parameter space where the 2QSS are simultaneously single-qubit sweet spots (1QSS) for the RX and AEON. These results provide a potential route to the realization of high fidelity quantum computation.
Charge noise is the main hurdle preventing high-fidelity operation, in particular that of two-qubit gates, of semiconductor-quantum-dot-based spin qubits. While certain sweet spots where charge noise is substantially suppressed have been demonstrated in several types of spin qubits, the existence of one for coupled singlet-triplet qubits is unclear. We theoretically demonstrate, using full configuration-interaction calculations, that a range of nearly sweet spots appear in the coupled singlet-triplet qubit system when a strong enough magnetic field is applied externally. We further demonstrate that ramping to and from the judiciously chosen nearly sweet spot using sequences based on the shortcut to adiabaticity offers maximal gate fidelities under charge noise and phonon-induced decoherence. These results should facilitate realization of high-fidelity two-qubit gates in singlet-triplet qubit systems.
The resonant exchange (RX) qubit is a promising variant of the exchange-only spin qubit in a triple quantum dot which responds to a narrow-band resonant frequency. But the advantage of a permanently applied exchange splitting for spin control generally entails an increased susceptibility to charge noise. We have investigated the influence of electrical charge noise on a resonant exchange (RX) qubit by taking into account uncorrelated noise in each quantum dot, giving rise to two independent noisy bias parameters e and ∆ [1]. Calculating the energy splitting of the two qubit states as a function of these two bias detuning parameters, we have identified sweet spots, where the qubit is least susceptible to noise. Our investigation shows that the sweet spots exist within the low-bias regime, in which the bias detuning parameters have the same magnitude as the hopping parameters between the dots. By calculating and comparing the charge dephasing rates at the various operating points of the RX qubit, we identify a new favorable operating regime for the RX qubit in the case of weak noise, based on these double sweet spots. In contrast, spin noise can be mitigated using exchange-based dynamical decoupling sequences that have been optimized using two different strategies, Uhrig dynamical decoupling (UDD) and optimized filter function dynamical decoupling (OFDD) [2]. Finally, we give a brief outlook towards the possibility of long-distance coupling between resonant exchange qubits mediated by a microwave cavity [3]. [1] M. Russ and G. Burkard, Phys. Rev. B 91, 235411 (2015). [2] N. Rohling and G. Burkard, arXiv:1510.04098. [3] M. Russ and G. Burkard, Phys. Rev. B (accepted) [arXiv:1508.07122].
Singlet-triplet qubits in lateral quantum dots in semiconductor heterostructures exhibit high-fidelity single-qubit gates via exchange interactions and magnetic field gradients. High-fidelity two-qubit entangling gates are challenging to generate since weak interqubit interactions result in slow gates that accumulate error in the presence of noise. However, the interqubit electrostatic interaction also produces a shift in the local double well detunings, effectively changing the dependence of exchange on the gate voltages. We consider an operating point where the effective exchange is first-order insensitive to charge fluctuations while maintaining nonzero interactions. This ``sweet spot'' exists only in the presence of interactions. We show that working at the interacting sweet spot can directly produce maximally entangling gates, and we simulate the gate evolution under realistic 1/f1/f1/f noise. We report theoretical two-qubit gate fidelities above 99% in GaAs and Si systems.
The search for a sweet spot, the locus in qubit parameters where quantum control is first-order insensitive to noises, is key to achieve high-fidelity quantum gates. Efforts to search for such a sweet spot in conventional double-quantum-dot singlet-triplet qubits where each dot hosts one electron (``two-electron singlet-triplet qubit''), especially for two-qubit operations, have been unsuccessful. Here we consider singlet-triplet qubits allowing each dot to host more than one electron, with a total of four electrons in the double quantum dots (``four-electron singlet-triplet qubit''). We theoretically demonstrate, using configuration interaction calculations, that sweet spots appear in this coupled qubit system. We further demonstrate that, under realistic charge noise and hyperfine noise, a two-qubit operation at the proposed sweet spot could offer gate fidelities ($\ensuremath{\sim}99%$) that are higher than the conventional two-electron singlet-triplet qubit system ($\ensuremath{\sim}90%$). Our results should facilitate realization of high-fidelity two-qubit gates in singlet-triplet qubit systems.
Charge noise is the main hurdle preventing high-fidelity operation, in particular that of two-qubit gates, of semiconductor-quantum-dot-based spin qubits. While certain sweet spots where charge noise is substantially suppressed have been demonstrated in several types of spin qubits, the existence of one for coupled singlet-triplet qubits is unclear. We theoretically demonstrate, using full configuration-interaction calculations, that a range of nearly sweet spots appears in the coupled singlet-triplet qubit system when a strong enough magnetic field is applied externally. We further demonstrate that ramping to and from the judiciously chosen nearly sweet spot using sequences based on the shortcut to adiabaticity offers maximal gate fidelities under charge noise and phonon-induced decoherence. These results should facilitate realization of high-fidelity two-qubit gates in singlet-triplet qubit systems.
Abstract The ability to tune qubits to flat points in their energy dispersions (“sweet spots”) is an important tool for mitigating the effects of charge noise and dephasing in solid-state devices. However, the number of derivatives that must be simultaneously set to zero grows exponentially with the number of coupled qubits, making the task untenable for as few as two qubits. This is a particular problem for adiabatic gates, due to their slower speeds. Here, we propose an adiabatic two-qubit gate for quantum dot hybrid qubits, based on the tunable, electrostatic coupling between distinct charge configurations. We confirm the absence of a conventional sweet spot, but show that controlled-Z (CZ) gates can nonetheless be optimized to have fidelities of ~99% for a typical level of quasistatic charge noise (σε ≃ 1 μeV). We then develop the concept of a dynamical sweet spot (DSS), for which the time-averaged energy derivatives are set to zero, and identify a simple pulse sequence that achieves an approximate DSS for a CZ gate, with a 5× improvement in the fidelity. We observe that the results depend on the number of tunable parameters in the pulse sequence, and speculate that a more elaborate sequence could potentially attain a true DSS.