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arXiv:1408.3425 · Physical Review B

Role of impact ionization in the thermalization of photoexcited Mott insulators

Philipp Werner, Karsten Held, Martin Eckstein

Published Dec 1, 2014• 57 citations
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Abstract

We study the influence of the pulse energy and fluence on the thermalization of photodoped Mott insulators. If the Mott gap is smaller than the width of the Hubbard bands, the kinetic energy of individual carriers can be large enough to produce additional doublon-hole pairs via a process analogous to impact ionization. The thermalization dynamics, which involves an adjustment of the doublon and hole densities, thus changes as a function of the energy of the photo-doped carriers and exhibits two time scales: a fast relaxation related to the impact ionization of high-energy carriers and a slower time scale associated with higher-order scattering processes. The slow dynamics depends more strongly on the gap size and the photodoping concentration.

DOI
10.1103/physrevb.90.235102

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We study the influence of the pulse energy and fluence on the thermalization of photodoped Mott insulators. If the Mott gap is smaller than the width of the Hubbard bands, the kinetic energy of individual carriers can be large enough to produce additional doublon-hole pairs via a process analogous to impact ionization. The thermalization dynamics, which involves an adjustment of the doublon and hole densities, thus changes as a function of the energy of the photo-doped carriers and exhibits two time scales: a fast relaxation related to the impact ionization of high-energy carriers and a slower time scale associated with higher-order scattering processes. The slow dynamics depends more strongly on the gap size and the photodoping concentration.
We use a nonequilibrium implementation of extended dynamical mean-field theory in combination with a noncrossing approximation impurity solver to study the effect of dynamical screening in photoexcited Mott insulators. The insertion of doublons and holes adds low-energy screening modes and leads to a reduction of the Mott gap. The coupling to low-energy bosonic modes furthermore opens new relaxation channels and significantly speeds up the thermalization process. We also investigate the effect of the energy distribution of the photo doped carriers on the screening.
We investigate the properties of the metallic state obtained by photodoping carriers into a Mott insulator. In a strongly interacting system, these carriers have a long lifetime, so that they can dissipate their kinetic energy to a phonon bath. In the relaxed state, the scattering rate saturates at a nonzero temperature-independent value, and the momentum-resolved spectral function features broad bands which differ from the well-defined quasiparticle bands of a chemically doped system. Our results indicate that a photodoped Mott insulator behaves as a bad metal, in which strong scattering between doublons and holes inhibits Fermi-liquid behavior down to low temperature.
Using the time-dependent Lanczos method, we study the nonequilibrium dynamics of the half-filled one-dimensional ionic Hubbard model, deep within the Mott insulating regime, under the influence of a transient laser pulse. In equilibrium, increasing the staggered potential in the Mott regime reduces the Mott gap and broadens the Hubbard bands, creating favorable conditions for impact ionization. After laser excitation, impact ionization is observed, with its occurrence depending on both the staggered potential and the laser pump frequency. By analyzing the time evolution of the kinetic, ionic, and Coulomb interaction energies, we identify a novel mechanism for impact ionization, in which excess ionic potential energy is converted into additional double occupancy-distinct from the conventional mechanism where excess kinetic energy drives this process. We further reveal that impact ionization arises from interference between excited states driven by photon excitations of the same order. These results present a new pathway for realizing impact ionization in strongly correlated electron systems.
We study a simple model of photovoltaic energy harvesting across a Mott-insulating gap consisting of a correlated layer connected to two metallic leads held at different chemical potentials. We address, in particular, the issue of impact ionization, whereby a particle photoexcited to the high-energy part of the upper Hubbard band uses its extra energy to produce a second particle-hole excitation. We find a drastic increase of the photocurrent upon entering the frequency regime where impact ionization is possible. At large values of the Mott gap, where impact ionization is energetically not allowed, we observe a suppression of the current and a piling up of charge in the high-energy part of the upper Hubbard band. Our study is based on a Floquet dynamical mean-field theory treatment of the steady state with the so-called auxiliary master equation approach as impurity solver. We verify that an additional approximation, taking the self-energy diagonal in the Floquet indices, is appropriate for the parameter range we are considering.
We study the relaxation dynamics of photocarriers in the paramagnetic Mott insulating phase of the half-filled two-band Hubbard model. Using nonequilibrium dynamical mean-field theory, we excite charge carriers across the Mott gap by a short hopping modulation, and simulate the evolution of the photodoped population within the Hubbard bands. We observe an ultrafast charge-carrier relaxation driven by the emission of local spin excitations with an inverse relaxation time proportional to the Hund's coupling. The photodoping generates additional side-bands in the spectral function, and for strong Hund's coupling, the photodoped population also splits into several resonances. The dynamics of the local many-body states reveals two effects, thermal blocking and kinetic freezing, which manifest themselves when the Hund's coupling becomes of the order of the temperature or the bandwidth, respectively. These effects, which are absent in the single-band Hubbard model, should be relevant for the interpretation of experiments on correlated materials with multiple active orbitals. In particular, the features revealed in the nonequilibrium energy distribution of the photocarriers are experimentally accessible, and provide information on the role of the Hund's coupling in these materials.
We study the photoexcitation dynamics of correlated band insulators, using nonequilibrium dynamical mean-field theory for the ionic Hubbard model. We find two distinct behaviors, depending on the ratio of the on-site interaction UUU and the bare band gap $\mathrm{\ensuremath{\Delta}}$. For small interactions, the relaxation is characterized by intraband carrier scattering in relatively rigid bands, leading to a nonthermal intermediate state with separate thermal distributions of electrons and holes. This behavior can be viewed as typical for a band insulator with weak interactions. For larger interaction, on the other hand, we observe a strong modification of the electronic spectrum and a filling-in of the gap after photoexcitation, along with a rapid thermalization of the system. The two behaviors therefore provide a dynamical distinction of a correlated band insulator and a band insulator, which can differ even when the spectra of the two systems are similar in equilibrium. The crossover happens when the interaction UUU is comparable to $\mathrm{\ensuremath{\Delta}}$.