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arXiv:1207.0402 · Physical Review Letters

Photoinduced States in a Mott Insulator

Martin Eckstein, Philipp Werner

Published Mar 18, 2013• 106 citations
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Abstract

We investigate the properties of the metallic state obtained by photodoping carriers into a Mott insulator. In a strongly interacting system, these carriers have a long lifetime, so that they can dissipate their kinetic energy to a phonon bath. In the relaxed state, the scattering rate saturates at a nonzero temperature-independent value, and the momentum-resolved spectral function features broad bands which differ from the well-defined quasiparticle bands of a chemically doped system. Our results indicate that a photodoped Mott insulator behaves as a bad metal, in which strong scattering between doublons and holes inhibits Fermi-liquid behavior down to low temperature.

DOI
10.1103/physrevlett.110.126401

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We investigate the properties of the metallic state obtained by photodoping carriers into a Mott insulator. In a strongly interacting system, these carriers have a long lifetime, so that they can dissipate their kinetic energy to a phonon bath. In the relaxed state, the scattering rate saturates at a nonzero temperature-independent value, and the momentum-resolved spectral function features broad bands which differ from the well-defined quasiparticle bands of a chemically doped system. Our results indicate that a photodoped Mott insulator behaves as a bad metal, in which strong scattering between doublons and holes inhibits Fermi-liquid behavior down to low temperature.
Photodoping of Mott insulators or correlated metals can create an unusual metallic state which simultaneously hosts holelike and electronlike particles. We study the dynamics of this state up to long times, as it passes its kinetic energy to the environment. When the system cools down, it crosses over from a bad metal into a resilient quasiparticle regime, in which quasiparticle bands are formed with separate Fermi levels for electrons and holes, but quasiparticles do not yet satisfy the Fermi-liquid paradigm. Subsequently, the transfer of energy to the environment slows down significantly, and the system does not reach the Fermi-liquid state even on the timescale of picoseconds. The transient photodoped strange metal exhibits unusual properties of relevance for ultrafast charge and heat transport: In particular, there can be an asymmetry in the properties of electrons and holes, and strong correlations between electrons and holes, as seen in the spectral properties.
We theoretically study photoemission spectra for photodoped one-dimensional Mott insulators that can host excitons, and show that their spectral characteristics differ qualitatively from those of photodoped semiconductors. In conventional semiconductors, photoemission spectra are well understood; free charge carriers generate spectral weight near the bottom of the conduction band, while the formation of excitons leads to replica features of the valence band appearing inside the band gap. In one-dimensional Mott insulators, on the other hand, strong correlations give rise to fractionalized elementary excitations-spinons, holons, and doublons-which fundamentally modify the photoemission response. We find that when photodoped carriers, i.e., doublons and holons, remain unbound, the photoemission spectrum directly reflects the dispersion of spinons, i.e., magnetic elementary excitations. In contrast, when a doublon and a holon form an excitonic bound state, replica structures of the lower Hubbard band emerge inside the Mott gap, carrying contributions from both spinon and holon excitations. Importantly, the distribution of the in-gap signal depends sensitively on the degree of doublon-holon binding. The origin of these spectral features is clarified through a combination of exact diagonalization and the slave-particle approach. These results indicate that photoemission from photoinduced carriers and excitons in strongly correlated electron systems can provide information on magnetic properties and carrier-binding properties.
We study the relaxation dynamics of photocarriers in the paramagnetic Mott insulating phase of the half-filled two-band Hubbard model. Using nonequilibrium dynamical mean-field theory, we excite charge carriers across the Mott gap by a short hopping modulation, and simulate the evolution of the photodoped population within the Hubbard bands. We observe an ultrafast charge-carrier relaxation driven by the emission of local spin excitations with an inverse relaxation time proportional to the Hund's coupling. The photodoping generates additional side-bands in the spectral function, and for strong Hund's coupling, the photodoped population also splits into several resonances. The dynamics of the local many-body states reveals two effects, thermal blocking and kinetic freezing, which manifest themselves when the Hund's coupling becomes of the order of the temperature or the bandwidth, respectively. These effects, which are absent in the single-band Hubbard model, should be relevant for the interpretation of experiments on correlated materials with multiple active orbitals. In particular, the features revealed in the nonequilibrium energy distribution of the photocarriers are experimentally accessible, and provide information on the role of the Hund's coupling in these materials.
A description of long-lived photodoped states in Mott insulators is challenging, as it needs to address exponentially separated timescales. We demonstrate how properties of such states can be computed using numerically exact steady state techniques, in particular, the quantum Monte Carlo algorithm, by using a time-local ansatz for the distribution function with separate Fermi functions for the electron and hole quasiparticles. The simulations show that the Mott gap remains robust to large photodoping, and the photodoped state has hole and electron quasiparticles with strongly renormalized properties.
We study the influence of the pulse energy and fluence on the thermalization of photodoped Mott insulators. If the Mott gap is smaller than the width of the Hubbard bands, the kinetic energy of individual carriers can be large enough to produce additional doublon-hole pairs via a process analogous to impact ionization. The thermalization dynamics, which involves an adjustment of the doublon and hole densities, thus changes as a function of the energy of the photo-doped carriers and exhibits two time scales: a fast relaxation related to the impact ionization of high-energy carriers and a slower time scale associated with higher-order scattering processes. The slow dynamics depends more strongly on the gap size and the photodoping concentration.
We use a nonequilibrium implementation of extended dynamical mean-field theory in combination with a noncrossing approximation impurity solver to study the effect of dynamical screening in photoexcited Mott insulators. The insertion of doublons and holes adds low-energy screening modes and leads to a reduction of the Mott gap. The coupling to low-energy bosonic modes furthermore opens new relaxation channels and significantly speeds up the thermalization process. We also investigate the effect of the energy distribution of the photo doped carriers on the screening.