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arXiv:1708.05011 · Physical review. B./Physical review. B

Impact ionization processes in the steady state of a driven Mott-insulating layer coupled to metallic leads

Max Erich Sorantin, Antonius Dorda, Karsten Held, Enrico Arrigoni

Published Mar 8, 2018• 26 citations
arXivHTMLPDF

Abstract

We study a simple model of photovoltaic energy harvesting across a Mott-insulating gap consisting of a correlated layer connected to two metallic leads held at different chemical potentials. We address, in particular, the issue of impact ionization, whereby a particle photoexcited to the high-energy part of the upper Hubbard band uses its extra energy to produce a second particle-hole excitation. We find a drastic increase of the photocurrent upon entering the frequency regime where impact ionization is possible. At large values of the Mott gap, where impact ionization is energetically not allowed, we observe a suppression of the current and a piling up of charge in the high-energy part of the upper Hubbard band. Our study is based on a Floquet dynamical mean-field theory treatment of the steady state with the so-called auxiliary master equation approach as impurity solver. We verify that an additional approximation, taking the self-energy diagonal in the Floquet indices, is appropriate for the parameter range we are considering.

DOI
10.1103/physrevb.97.115113

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We study a simple model of photovoltaic energy harvesting across a Mott-insulating gap consisting of a correlated layer connected to two metallic leads held at different chemical potentials. We address, in particular, the issue of impact ionization, whereby a particle photoexcited to the high-energy part of the upper Hubbard band uses its extra energy to produce a second particle-hole excitation. We find a drastic increase of the photocurrent upon entering the frequency regime where impact ionization is possible. At large values of the Mott gap, where impact ionization is energetically not allowed, we observe a suppression of the current and a piling up of charge in the high-energy part of the upper Hubbard band. Our study is based on a Floquet dynamical mean-field theory treatment of the steady state with the so-called auxiliary master equation approach as impurity solver. We verify that an additional approximation, taking the self-energy diagonal in the Floquet indices, is appropriate for the parameter range we are considering.
We study a model for photovoltaic energy collection consisting of a Mott-insulating layer in presence of acoustic phonons, coupled to two wide-band fermion leads at different chemical potentials and driven into a nonequilibrium steady state by a periodic electric field. We treat electron correlations with nonequilibrium dynamical mean-field theory using the so-called auxiliary master-equation approach as impurity solver and include dissipation by acoustic phonons via the Migdal approximation. For a small hybridization to the leads, we obtain a peak in the photocurrent as a function of the driving frequency which can be associated with impact ionization processes. For larger hybridizations the shallow peak suggests a suppression of impact ionization with respect to direct photovoltaic excitations. Acoustic phonons slightly enhance the photocurrent for small driving frequencies and suppress it at frequencies around the main peak at all considered hybridization strengths.
Using the time-dependent Lanczos method, we study the nonequilibrium dynamics of the half-filled one-dimensional ionic Hubbard model, deep within the Mott insulating regime, under the influence of a transient laser pulse. In equilibrium, increasing the staggered potential in the Mott regime reduces the Mott gap and broadens the Hubbard bands, creating favorable conditions for impact ionization. After laser excitation, impact ionization is observed, with its occurrence depending on both the staggered potential and the laser pump frequency. By analyzing the time evolution of the kinetic, ionic, and Coulomb interaction energies, we identify a novel mechanism for impact ionization, in which excess ionic potential energy is converted into additional double occupancy-distinct from the conventional mechanism where excess kinetic energy drives this process. We further reveal that impact ionization arises from interference between excited states driven by photon excitations of the same order. These results present a new pathway for realizing impact ionization in strongly correlated electron systems.
We study the influence of the pulse energy and fluence on the thermalization of photodoped Mott insulators. If the Mott gap is smaller than the width of the Hubbard bands, the kinetic energy of individual carriers can be large enough to produce additional doublon-hole pairs via a process analogous to impact ionization. The thermalization dynamics, which involves an adjustment of the doublon and hole densities, thus changes as a function of the energy of the photo-doped carriers and exhibits two time scales: a fast relaxation related to the impact ionization of high-energy carriers and a slower time scale associated with higher-order scattering processes. The slow dynamics depends more strongly on the gap size and the photodoping concentration.
We address the steady-state behavior of a system consisting of several correlated monoatomic layers sandwiched between two metallic leads under the influence of a bias voltage. In particular, we investigate the interplay of the local Hubbard and the long-range Coulomb interaction on the charge redistribution at the interface, in the paramagnetic regime of the system. We provide a detailed study of the importance of the various system parameters, like Hubbard UUU, lead-correlated region coupling strength, and the applied voltage on the charge distribution in the correlated region and in the adjacent parts of the leads. In addition, we also present results for the steady-state current density and double occupancies. Our results indicate that, in a certain range of parameters, the charge on the two layers at the interface between the leads and the correlated region display opposite signs, producing a dipolelike layer at the interface. Our results are obtained within nonequilibrium (steady-state) real-space dynamical mean-field theory, with a self-consistent treatment of the long-range part of the Coulomb interaction by means of the Poisson equation. The latter is solved by the Newton-Raphson method and we find that this significantly reduces the computational cost compared to existing treatment. As the impurity solver for real-space dynamical mean-field theory, we use the auxiliary master equation approach, which addresses the impurity problem within a finite auxiliary system coupled to Markovian environments.
We characterize the current-carrying nonequilibrium steady state (NESS) in a single-band Hubbard model confronted with a static electric field in the presence of quenched disorder. Beyond the linear response regime, the electric field amplitude must compensate for at least half of the band gap to have a non-negligible stationary current. As the disorder is not expected to dissipate the extra energy injected by the field, optical phonons assisted by a fermionic heat bath serve as dissipation channels for the current-induced Joule heat generated by the accelerated electrons. The NESS of the system is addressed employing the dynamical mean-field theory using the so-called auxiliary master equation approach as impurity solver. Disorder effects are treated locally via the coherent potential approximation (CPA) and the self-consistent Born (SCB) approach. In the regime in which the two schemes yield similar results, we employ the SCB as it is computationally cheaper than the CPA. We show that, in a purely electronic setup, the disorder-induced dephasing cannot contribute states within the gap but only smear out the edges of the Hubbard bands. When phonons are taken into account, the different nature of disorder-induced dephasing and phonon-related dissipation becomes clear. We show that although both disorder and electron-phonon interaction enhance the current at off-resonant fields, disorder effects play a marginal role since they cannot provide in-gap states which are instead brought about by phonons and represent the privileged relaxation pathway for excited electrons.
Abstract We consider the Hubbard model at half filling, driven by an external, stationary laser field. This stationary, but periodic in time, electromagnetic field couples to the charge current, i.e. it induces an extra contribution to the hopping amplitude in the Hubbard Hamiltonian (photo‐induced hopping). We generalize the dynamical mean‐field theory (DMFT) for nonequilibrium with periodic‐in‐time external fields, using a Floquet mode representation and the Keldysh formalism. We calculate the non‐equilibrium electron distribution function, the density of states and the optical DC conductivity in the presence of the external laser field for laser frequencies above and below the Mott‐Hubbard gap. The results demonstrate that the system exhibits an insulator‐metal transition as the frequency of the external field is increased and exceeds the Mott‐Hubbard gap. This corresponds to photo‐induced excitations into the upper Hubbard band.