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arXiv:1802.05659 · Physical review. B./Physical review. B

Photoexcited states in correlated band insulators

Nagamalleswararao Dasari, Martin Eckstein

Published Jul 11, 2018• 4 citations
arXivHTMLPDF

Abstract

We study the photoexcitation dynamics of correlated band insulators, using nonequilibrium dynamical mean-field theory for the ionic Hubbard model. We find two distinct behaviors, depending on the ratio of the on-site interaction $U$ and the bare band gap $\mathrm{\ensuremath{\Delta}}$. For small interactions, the relaxation is characterized by intraband carrier scattering in relatively rigid bands, leading to a nonthermal intermediate state with separate thermal distributions of electrons and holes. This behavior can be viewed as typical for a band insulator with weak interactions. For larger interaction, on the other hand, we observe a strong modification of the electronic spectrum and a filling-in of the gap after photoexcitation, along with a rapid thermalization of the system. The two behaviors therefore provide a dynamical distinction of a correlated band insulator and a band insulator, which can differ even when the spectra of the two systems are similar in equilibrium. The crossover happens when the interaction $U$ is comparable to $\mathrm{\ensuremath{\Delta}}$.

DOI
10.1103/physrevb.98.035113

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We study the photoexcitation dynamics of correlated band insulators, using nonequilibrium dynamical mean-field theory for the ionic Hubbard model. We find two distinct behaviors, depending on the ratio of the on-site interaction UUU and the bare band gap \ensuremathΔ\mathrm{\ensuremath{\Delta}}\ensuremathΔ. For small interactions, the relaxation is characterized by intraband carrier scattering in relatively rigid bands, leading to a nonthermal intermediate state with separate thermal distributions of electrons and holes. This behavior can be viewed as typical for a band insulator with weak interactions. For larger interaction, on the other hand, we observe a strong modification of the electronic spectrum and a filling-in of the gap after photoexcitation, along with a rapid thermalization of the system. The two behaviors therefore provide a dynamical distinction of a correlated band insulator and a band insulator, which can differ even when the spectra of the two systems are similar in equilibrium. The crossover happens when the interaction UUU is comparable to \ensuremathΔ\mathrm{\ensuremath{\Delta}}\ensuremathΔ.
We use nonequilibrium dynamical mean-field theory in combination with a recently implemented strong-coupling impurity solver to investigate the relaxation of a Mott insulator after a laser excitation with frequency comparable to the Hubbard gap. The time evolution of the double occupancy exhibits a crossover from a strongly damped transient at short times toward an exponential thermalization at long times. In the limit of strong interactions, the thermalization time is consistent with the exponentially small decay rate for artificially created doublons, which was measured in ultracold atomic gases. When the interaction is comparable to the bandwidth, however, the double occupancy thermalizes within a few times the inverse bandwidth along a rapid thermalization path in which the exponential tail is absent. Similar behavior can be observed in time-resolved photoemission spectroscopy. Our results show that a simple quasi-equilibrium description of the electronic state breaks down for pump-excited Mott insulators characterized by strong interactions.
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We study the relaxation dynamics of photocarriers in the paramagnetic Mott insulating phase of the half-filled two-band Hubbard model. Using nonequilibrium dynamical mean-field theory, we excite charge carriers across the Mott gap by a short hopping modulation, and simulate the evolution of the photodoped population within the Hubbard bands. We observe an ultrafast charge-carrier relaxation driven by the emission of local spin excitations with an inverse relaxation time proportional to the Hund's coupling. The photodoping generates additional side-bands in the spectral function, and for strong Hund's coupling, the photodoped population also splits into several resonances. The dynamics of the local many-body states reveals two effects, thermal blocking and kinetic freezing, which manifest themselves when the Hund's coupling becomes of the order of the temperature or the bandwidth, respectively. These effects, which are absent in the single-band Hubbard model, should be relevant for the interpretation of experiments on correlated materials with multiple active orbitals. In particular, the features revealed in the nonequilibrium energy distribution of the photocarriers are experimentally accessible, and provide information on the role of the Hund's coupling in these materials.
We study the optical properties of an electron–hole two-band Hubbard model with interactions of electron–electron (hole–hole) repulsion U and electron–hole attraction U '. In the case of two types of correlated insulators at half filling, viz. , the Mott–Hubbard type and the biexciton type, interband linear absorption/gain spectra including excitonic effects are calculated analytically using two-site dynamical mean-field theory and ladder approximation. We show that an exciton-like peak structure emerges because of an “exciton” in the sea of correlated fermions when U ' is larger than a certain critical value. The binding energy of the photoinduced excitonic bound state and the spectral intensity are evaluated as a function of U '. The emergence and absence of the exciton-like peak suggests that there are two different insulating mechanisms in the Mott–Hubbard insulating state of the electron–hole system: one is attributable to only U and the other is attributable to both U and U '; the latter is called the excitonic Mott–Hubbard insulating state. The intrinsic difference of the mechanisms cannot be captured from only single-particle properties such as the density of states, but it appears clearly in optical properties reflecting two-particle correlations.
In this thesis, several aspects of correlation effects in band insulators that were hitherto not addressed, both in equilibrium and non-equilibrium, are studied using the Ionic Hubbard model (IHM) at half-filling and Dynamical mean-field theory (DMFT). The IHM is an extension of the Hubbard model on a bipartite lattice with a staggered on-site “ionic potential Δ added in. The Hubbard model by itself is a tight-binding model of electrons hopping between (orbitals localized on) lattice sites, with amplitudes t and t’ for first neighbor and second neighbor hopping respectively, together with a coulomb repulsion energy cost of U for double occupancy (i.e., with both up and down spin electrons) at any lattice site. The studies in this thesis address strong correlation effects in this model using DMFT techniques which map the lattice problem to a self consistently embedded quantum impurity problem. The impurity problem itself is solved using state of the art continuous time quantum monte-carlo (CTQMC) techniques (Ch.s 3 and 4) as well as the somewhat simpler Iterated Perturbation Theory (IPT) (Ch.s 3, 5 and 6). Chapter 3 of the thesis is devoted to a detailed analysis of the properties of the half-filled t-U-Δ IHM (i.e., with t’=0) on a Bethe lattice of infinite connectivity. It is shown conclusively here that for a finite Δ and at zero temperature (T=0), the IHM has a first order transition from the Band Insulator (BI) phase to an antiferromagnetic insulating (AFI) phase at a threshold U = UAF (which increases with Δ) such that the BI to AFI transition preempts the transition from the BI to the correlation induced paramagnetic metallic (PM) phase. Evidence is also presented for a quantum transition to a sliver of half-metal (HM) phase just after the AF order turns on, followed by a return to the AFI phase on further increasing U. With increasing T, the AF order is lost via a first-order transition for weak to intermediate U/t. In the strongly correlated regime, where the effective low-energy Hamiltonian is the Heisenberg model, the transition from the AFI to the paramagnetic Mott insulating phase (adiabatically connected to the BI phase) is of second order. As T increases, the range of U over which the AF order is stable shrinks, collapsing eventually to a line of tricritical points that separates the surfaces of first- and second-order phase transitions in the T-U-Δ space. In Chapter 4 of the thesis the t-t’-U-Δ IHM on a square lattice is studied using DMFT+CTQMC. It is shown here that the presence of t’ frustrates the AF order for weak to intermediate correlations, resulting in the stabilization of the correlation induced PM phase over a broad region of the parameter space, although the AFI is always the stable phase for large enough U. In the intermediate coupling regimes, two other interesting phases show up as a result of the competition among U, Δ and t’ : a Ferrimagnetic metallic (FM) phase which has non-zero values of the uniform as well as staggered magnetization; and even more interesting, an…
We study a model of a covalent band insulator with on-site Coulomb repulsion at half filling using dynamical mean-field theory. Upon increasing the interaction strength the system undergoes a discontinuous transition from a correlated band insulator to a Mott insulator with hysteretic behavior at low temperatures. Increasing the temperature in the band insulator close to the insulator-insulator transition we find a crossover to a Mott insulator at elevated temperatures. Remarkably, correlations decrease the energy gap in the correlated band insulator. The gap renormalization can be traced to the low-frequency behavior of the self-energy, analogously to the quasiparticle renormalization in a Fermi liquid. While the uncorrelated band insulator is characterized by a single gap for both charge and spin excitations, the spin gap is smaller than the charge gap in the correlated system.