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arXiv:1103.0454 · Physical Review B

Thermalization of a pump-excited Mott insulator

Martin Eckstein, Philipp Werner

Published Jul 25, 2011• 132 citations
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Abstract

We use nonequilibrium dynamical mean-field theory in combination with a recently implemented strong-coupling impurity solver to investigate the relaxation of a Mott insulator after a laser excitation with frequency comparable to the Hubbard gap. The time evolution of the double occupancy exhibits a crossover from a strongly damped transient at short times toward an exponential thermalization at long times. In the limit of strong interactions, the thermalization time is consistent with the exponentially small decay rate for artificially created doublons, which was measured in ultracold atomic gases. When the interaction is comparable to the bandwidth, however, the double occupancy thermalizes within a few times the inverse bandwidth along a rapid thermalization path in which the exponential tail is absent. Similar behavior can be observed in time-resolved photoemission spectroscopy. Our results show that a simple quasi-equilibrium description of the electronic state breaks down for pump-excited Mott insulators characterized by strong interactions.

DOI
10.1103/physrevb.84.035122

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We use nonequilibrium dynamical mean-field theory in combination with a recently implemented strong-coupling impurity solver to investigate the relaxation of a Mott insulator after a laser excitation with frequency comparable to the Hubbard gap. The time evolution of the double occupancy exhibits a crossover from a strongly damped transient at short times toward an exponential thermalization at long times. In the limit of strong interactions, the thermalization time is consistent with the exponentially small decay rate for artificially created doublons, which was measured in ultracold atomic gases. When the interaction is comparable to the bandwidth, however, the double occupancy thermalizes within a few times the inverse bandwidth along a rapid thermalization path in which the exponential tail is absent. Similar behavior can be observed in time-resolved photoemission spectroscopy. Our results show that a simple quasi-equilibrium description of the electronic state breaks down for pump-excited Mott insulators characterized by strong interactions.
We study the photoexcitation dynamics of correlated band insulators, using nonequilibrium dynamical mean-field theory for the ionic Hubbard model. We find two distinct behaviors, depending on the ratio of the on-site interaction UUU and the bare band gap $\mathrm{\ensuremath{\Delta}}$. For small interactions, the relaxation is characterized by intraband carrier scattering in relatively rigid bands, leading to a nonthermal intermediate state with separate thermal distributions of electrons and holes. This behavior can be viewed as typical for a band insulator with weak interactions. For larger interaction, on the other hand, we observe a strong modification of the electronic spectrum and a filling-in of the gap after photoexcitation, along with a rapid thermalization of the system. The two behaviors therefore provide a dynamical distinction of a correlated band insulator and a band insulator, which can differ even when the spectra of the two systems are similar in equilibrium. The crossover happens when the interaction UUU is comparable to $\mathrm{\ensuremath{\Delta}}$.
We use a self-consistent strong-coupling expansion for the self-energy (perturbation theory in the hopping) to describe the nonequilibrium dynamics of strongly correlated lattice fermions. We study the three-dimensional homogeneous Fermi-Hubbard model driven by an external electric field showing that the damping of the ensuing Bloch oscillations depends on the direction of the field and that for a broad range of field strengths a long-lived transient prethermalized state emerges. This long-lived transient regime implies that thermal equilibrium may be out of reach of the time scales accessible in present cold atom experiments but shows that an interesting new quasiuniversal transient state exists in nonequilibrium governed by a thermalized kinetic energy but not a thermalized potential energy. In addition, when the field strength is equal in magnitude to the interaction between atoms, the system undergoes a rapid thermalization, characterized by a different quasiuniversal behavior of the current and spectral function for different values of the hopping.
We study the relaxation dynamics of photocarriers in the paramagnetic Mott insulating phase of the half-filled two-band Hubbard model. Using nonequilibrium dynamical mean-field theory, we excite charge carriers across the Mott gap by a short hopping modulation, and simulate the evolution of the photodoped population within the Hubbard bands. We observe an ultrafast charge-carrier relaxation driven by the emission of local spin excitations with an inverse relaxation time proportional to the Hund's coupling. The photodoping generates additional side-bands in the spectral function, and for strong Hund's coupling, the photodoped population also splits into several resonances. The dynamics of the local many-body states reveals two effects, thermal blocking and kinetic freezing, which manifest themselves when the Hund's coupling becomes of the order of the temperature or the bandwidth, respectively. These effects, which are absent in the single-band Hubbard model, should be relevant for the interpretation of experiments on correlated materials with multiple active orbitals. In particular, the features revealed in the nonequilibrium energy distribution of the photocarriers are experimentally accessible, and provide information on the role of the Hund's coupling in these materials.
We use a nonequilibrium implementation of extended dynamical mean-field theory in combination with a noncrossing approximation impurity solver to study the effect of dynamical screening in photoexcited Mott insulators. The insertion of doublons and holes adds low-energy screening modes and leads to a reduction of the Mott gap. The coupling to low-energy bosonic modes furthermore opens new relaxation channels and significantly speeds up the thermalization process. We also investigate the effect of the energy distribution of the photo doped carriers on the screening.
Using the time-dependent Lanczos method, we study the nonequilibrium dynamics of the half-filled one-dimensional ionic Hubbard model, deep within the Mott insulating regime, under the influence of a transient laser pulse. In equilibrium, increasing the staggered potential in the Mott regime reduces the Mott gap and broadens the Hubbard bands, creating favorable conditions for impact ionization. After laser excitation, impact ionization is observed, with its occurrence depending on both the staggered potential and the laser pump frequency. By analyzing the time evolution of the kinetic, ionic, and Coulomb interaction energies, we identify a novel mechanism for impact ionization, in which excess ionic potential energy is converted into additional double occupancy-distinct from the conventional mechanism where excess kinetic energy drives this process. We further reveal that impact ionization arises from interference between excited states driven by photon excitations of the same order. These results present a new pathway for realizing impact ionization in strongly correlated electron systems.
Photodoped states are widely observed in laser-excited Mott insulators, in which charge excitations are quickly created and can exist beyond the duration of the external driving. Despite the fruitful experimental explorations, theoretical studies on the microscopic models face the challenge to simultaneously deal with exponentially separated time scales, especially in multiband systems, where the longtime behaviors are often well beyond the reach of state-of-the-art numerical tools. Here, we address this difficulty by introducing a steady-state description of photodoped Mott insulators using an open-system setup, where the photodoped system is stabilized as a nonequilibrium steady state by a weak external driving. Taking advantage of the stationarity, we implement and discuss the details of an efficient numerical tool using the steady-state dynamical mean-field theory combined with the noncrossing approximation. We demonstrate that these stationary photodoped states exhibit the same properties of their transient counterparts, while being solvable with reasonable computational efforts. Furthermore, they can be parametrized by just a few physical quantities, including the effective temperature and the density of charge excitations, which confirms the universal nature of photodoped states indeed independent of the excitation protocols. As a first application, we consider the stationary photodoped states in a two-band Hubbard model with intertwined spin-and-orbital ordering and find a family of hidden phases unknown from the previous studies, implying an apparently unexplored time regime of the relaxation of the intertwined orders.