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arXiv:1210.3272 · Applied Physics Letters

A microfabricated ion trap with integrated microwave circuitry

D. T. C. Allcock, T. P. Harty, Christopher J. Ballance, B. C. Keitch, Norbert M. Linke, Derek N. Stacey, D. M. Lucas

Published Jan 28, 2013• 50 citations
arXivHTMLPDF

Abstract

We describe the design, fabrication, and testing of a surface-electrode ion trap, which incorporates microwave waveguides, resonators, and coupling elements for the manipulation of trapped ion qubits using near-field microwaves. The trap is optimised to give a large microwave field gradient to allow state-dependent manipulation of the ions' motional degrees of freedom, the key to multi-qubit entanglement. The microwave field near the centre of the trap is characterised by driving hyperfine transitions in a single laser-cooled 43Ca+ ion.

DOI
10.1063/1.4774299

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We describe the design, fabrication, and testing of a surface-electrode ion trap, which incorporates microwave waveguides, resonators, and coupling elements for the manipulation of trapped ion qubits using near-field microwaves. The trap is optimised to give a large microwave field gradient to allow state-dependent manipulation of the ions' motional degrees of freedom, the key to multi-qubit entanglement. The microwave field near the centre of the trap is characterised by driving hyperfine transitions in a single laser-cooled 43Ca+ ion.
The major challenges in trapped-ion quantum computation are to scale up few-ion experiments to many qubits and to improve control techniques so that quantum logic gates can be carried out with higher fidelities. This thesis reports experimental progress in both of these areas. In the early part of the thesis we describe the fabrication of a surface-electrode ion trap, the development of the apparatus and techniques required to operate it and the successful trapping of 40Ca+ ions. Notably we developed methods to control the orientation of the principal axes and to minimise ion micromotion. We propose a repumping scheme that simplifies heating rate measurements for ions with low-lying D levels, and use it to characterise the electric field noise in the trap. Surface-electrode traps are important because they offer a route to dense integration of electronic and optical control elements using existing microfabrication technology. We explore this scaling route by testing a series of three traps that were microfabricated at Sandia National Laboratories. Investigations of micromotion and charging of the surface by laser beams were carried out and improvements to future traps are suggested. Using one of these traps we also investigated anomalous electrical noise from the electrode surfaces and discovered that it can be reduced by cleaning with a pulsed laser. A factor of two decrease was observed; this represents the first in situ removal of this noise source, an important step towards higher gate fidelities. In the second half of the thesis we describe the design and construction of an experiment for the purpose of replacing laser-driven multi-qubit quantum logic gates with microwave-driven ones. We investigate magnetic-field-independent hyperfine qubits in 40Ca+ as suitable qubits for this scheme. We make a design study of how best to integrate an ion trap with the microwave conductors required to implement the gate and propose a novel integrated resonant structure. The trap was fabricated and ions were successfully loaded. Single-qubit experiments show that the microwave fields above the trap are in excellent agreement with software simulations. There are good prospects for demonstrating a multi-qubit gate in the near future. We conclude by discussing the possibilities for larger-scale quantum computation by combining microfabricated traps and microwave control.
Abstract We report the design, fabrication, and characterization of a cryogenic ion trap system for the implementation of quantum logic driven by near-field microwaves. The trap incorporates an on-chip microwave resonator with an electrode geometry designed to null the microwave field component that couples directly to the qubit, while giving a large field gradient for driving entangling logic gates. We map the microwave field using a single 43Ca+ ion, and measure the ion trapping lifetime and motional mode heating rates for one and two ions.
This thesis reports high-fidelity near-field spatial microwave addressing of long-lived 43Ca+ "atomic clock" qubits performed in a two-zone single-layer surface-electrode ion trap. Addressing is implemented by using two of the trap's integrated microwave electrodes, one in each zone, to drive single-qubit rotations in the zone we choose to address whilst interferometrically cancelling the microwave field at the neighbour (non-addressed) zone. Using this field-nulling scheme, we measure a Rabi frequency ratio between addressed and non-addressed zones of up to 1400, from which we calculate an addressing error (or a spin-flip probability on the qubit transition) of 1e-6. Off-resonant excitation out of the qubit state is a more significant source of error in this experiment, but we also demonstrate polarisation control of the microwave field at an error level of 2e-5, which, if combined with individual-ion addressing, would be sufficient to suppress off-resonant excitation errors to the 1e-9 level. Further, this thesis presents preliminary results obtained with a micron-scale coupled-microstrip differential antenna probe that can be scanned over an ion-trap chip to map microwave magnetic near fields. The probe is designed to enable the measurement of fields at tens of microns above electrode surfaces and to act as an effective characterisation tool, speeding up design-fabrication-characterisation cycles in the production of new prototype microwave ion-trap chips. Finally, a new multi-layer design for an ion-trap chip which displays, in simulations, a 100-fold improvement in addressing performance, is presented. The chip electrode structure is designed to use the cancelling effect of microwave return currents to produce Rabi frequency ratios of order 1000 between trap zones using a single microwave electrode (i.e. without the need for nulling fields). If realised, this chip could be used to drive individually addressed single-qubit operations on arrays of memory qubits in parallel and with high fidelity.
This thesis describes the experimental work towards the development of a scalable quantum computer based on microfabricated ion trap using long-wavelength radiation and magnetic field gradient. There are three key elements in implementing such a quantum computer: the junction trap to shuttle ions, the structure to generate high gradient magnetic field and the structure to induce strong microwave coupling to the ions. A new dynamic simulation tool was developed addressing the problems faced by static solvers. This tool was used to aid the design and optimisation of an X junction geometry allowing the ions to be shuttled with minimised motional heating gain. The design and fabrication techniques were reported on the structure to generate a high gradient magnetic field. A discussion was given on the design of producing microwave and maximise the coupling to the cold ions. A review was given on the far-field methods and near-field methods. A novel design was reported where the single-qubit gate is predicted to be 45 times faster than a conventional setup. Two essential topics on the microfabrication of a reliable scalable quantum computer unit were discussed: breakdown and RF loss. Investigation using numerical simulations showed that dielectric can breakdown due to high voltage and local heating which are results of impedance mismatch. Microfabrication processes were improved, high-quality films were reported to have twice as much breakdown voltages. The mechanisms of RF loss were reviewed. Novel structures and smooth electroplating technique were developed to minimise the loss. A low loss ion trap was produced and tested. An experimentally observed anomalous glow discharge phenomenon was reported and investigated.
Microwave-driven quantum logic gates in trapped-ion systems offer a scalable and laser-free alternative to optical control, with the potential for robust integration into surface-electrode trap architectures. In this work, we present a systematic design guideline for planar ion traps optimized for fast two-qubit microwave gates using chip-integrated conductors. We investigate two electrode configurations, one employing a single microwave line for driving σ transitions, and another with two symmetric lines for π transitions. Through finite-element simulations, we analyze ion height, magnetic field gradients, heating effects, and gate durations under realistic cryogenic conditions. Our results show that both configurations can achieve two-qubit gate times in the order of 10 μs for Be+9 and Ca+40 ions.
Individual-qubit addressing is a prerequisite for many instances of quantum information processing. We demonstrate this capability on trapped-ion qubits with microwave near fields delivered by electrode structures integrated into a microfabricated surface-electrode trap. We describe four approaches that may be used in quantum information experiments with hyperfine levels as qubits. We implement individual control on two 25Mg+ ions separated by 4.3 μm and find spin-flip crosstalk errors on the order of 10(-3).