Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Near-field microwave addressing of trapped-ion qubits for scalable quantum computation

Diana Prado Lopes Aude Craik

Published Jan 1, 2016• 1 citation
Publisher

Abstract

This thesis reports high-fidelity near-field spatial microwave addressing of long-lived 43Ca+ "atomic clock" qubits performed in a two-zone single-layer surface-electrode ion trap. Addressing is implemented by using two of the trap's integrated microwave electrodes, one in each zone, to drive single-qubit rotations in the zone we choose to address whilst interferometrically cancelling the microwave field at the neighbour (non-addressed) zone. Using this field-nulling scheme, we measure a Rabi frequency ratio between addressed and non-addressed zones of up to 1400, from which we calculate an addressing error (or a spin-flip probability on the qubit transition) of 1e-6. Off-resonant excitation out of the qubit state is a more significant source of error in this experiment, but we also demonstrate polarisation control of the microwave field at an error level of 2e-5, which, if combined with individual-ion addressing, would be sufficient to suppress off-resonant excitation errors to the 1e-9 level. Further, this thesis presents preliminary results obtained with a micron-scale coupled-microstrip differential antenna probe that can be scanned over an ion-trap chip to map microwave magnetic near fields. The probe is designed to enable the measurement of fields at tens of microns above electrode surfaces and to act as an effective characterisation tool, speeding up design-fabrication-characterisation cycles in the production of new prototype microwave ion-trap chips. Finally, a new multi-layer design for an ion-trap chip which displays, in simulations, a 100-fold improvement in addressing performance, is presented. The chip electrode structure is designed to use the cancelling effect of microwave return currents to produce Rabi frequency ratios of order 1000 between trap zones using a single microwave electrode (i.e. without the need for nulling fields). If realised, this chip could be used to drive individually addressed single-qubit operations on arrays of memory qubits in parallel and with high fidelity.

DOI
10.5287/ora-qrrxymroz

Related papers

High-fidelity spatial addressing of Ca-43 qubits using near-field microwave control

Diana Prado Lopes Aude Craik, Norbert M. Linke, M. A. Sepiol +6 more

Individual addressing of qubits is essential for scalable quantum computation. Spatial addressing allows unlimited numbers of qubits to share the same frequency, whilst enabling arbitrary parallel operations. We demonstrate addressing of long-lived $^{43}\text{Ca}^+$ atomic clock qubits held in separate zones of a microfabricated surface trap with integrated microwave electrodes. By coherently cancelling the microwave field in one zone we measure a ratio of Rabi frequencies between addressed and non-addressed qubits of up to 1400, implying an addressing error of $1.3\times 10^{-6}$. Off-resonant excitation prevents this error level being directly demonstrated, but we also show polarization control of the microwave field with error $2\times 10^{-5}$, sufficient to suppress off-resonant excitation out of the qubit states to the $\sim 10^{-9}$ level. Such polarization control could enable fast microwave operations.

ORA review team•Jan 1, 2016•0 citations

High-fidelity spatial and polarization addressing of Ca+43 qubits using near-field microwave control

Diana Prado Lopes Aude Craik, Norbert M. Linke, M. A. Sepiol +7 more

Individual addressing of qubits is essential for scalable quantum computation. Spatial addressing allows unlimited numbers of qubits to share the same frequency, while enabling arbitrary parallel operations. We demonstrate addressing of long-lived $^{43}\mathrm{Ca}^{+}$ ``atomic clock'' qubits held in separate zones ($960\phantom{\rule{0.28em}{0ex}}\ensuremath{\mu}\text{m}$ apart) of a microfabricated surface trap with integrated microwave electrodes. Such zones could form part of a ``quantum charge-coupled device'' architecture for a large-scale quantum information processor. By coherently canceling the microwave field in one zone we measure a ratio of Rabi frequencies between addressed and nonaddressed qubits of up to 1400, from which we calculate a spin-flip probability on the qubit transition of the nonaddressed ion of $1.3\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}6}$. Off-resonant excitation then becomes the dominant error process, at around $5\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}3}$. It can be prevented either by working at higher magnetic field, or by polarization control of the microwave field. We implement polarization control with error $2\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}5}$, which would suffice to suppress off-resonant excitation to the $\ensuremath{\sim}{10}^{\ensuremath{-}9}$ level if combined with spatial addressing. Such polarization control could also enable fast microwave operations.

arXiv:1601.02696•Physical Review A•Feb 27, 2017•30 citations

High-fidelity spatial addressing of $^{43}\text{Ca}^+$ qubits using near-field microwave control

Diana Prado Lopes Aude Craik, Norbert M. Linke, D. T. C. Allcock +6 more

Individual addressing of qubits is essential for scalable quantum computation. Spatial addressing allows unlimited numbers of qubits to share the same frequency, whilst enabling arbitrary parallel operations. We demonstrate addressing of long-lived $^{43}\text{Ca}^+$ atomic clock qubits held in separate zones of a microfabricated surface trap with integrated microwave electrodes. By coherently cancelling the microwave field in one zone we measure a ratio of Rabi frequencies between addressed and non-addressed qubits of up to 1400, implying an addressing error of $1.3\times 10^{-6}$. Off-resonant excitation prevents this error level being directly demonstrated, but we also show polarization control of the microwave field with error $2\times 10^{-5}$, sufficient to suppress off-resonant excitation out of the qubit states to the $\sim 10^{-9}$ level. Such polarization control could enable fast microwave operations.

Bulletin of the American Physical Society•May 24, 2016•0 citations

Two-qubit microwave quantum logic gate with 9Be+ ions in scalable surface-electrode ion traps

H. Hahn

Towards the goal of a large-scale quantum computer based on trapped ions, near-field microwaves represent a promising approach to perform the techni- cally challenging key operation of a two-qubit entangling gate. In this thesis we present the first microwave-driven two-qubit gate in 9Be+ ions employing a first-order field-independent qubit transition and a scalable surface-electrode ion trap at room temperature. We test the quality of the gate operation by producing a maximally entangled state and measuring the resulting state preparation fidelity in a reduced tomography procedure. For the best two- qubit gate achieved in the system we find this fidelity to be F = 98.2 ± 1.2 %. Following a comprehensive error analysis based on numerical simulations and experimentally determined input parameters, we identify current infidelity con- tributions of the apparatus. Here, the natural error source of the microwave near-field approach, namely fluctuating AC Zeeman shifts, could be reduced to the 10^−4 level due to the optimized design of the employed microwave con- ductor. As we find that the three largest errors can all be reduced upon purely technical improvements, higher fidelities are feasible in the future. Besides the gate realization, the thesis also comprises the initial characterization of the employed ion trap as well as the design and construction of a Raman laser at ∼ 313 nm which is utilized to perform near ground state cooling of radial modes of a single- and two-ion crystal. Here, ensuing heating rate measure- ments on a single-ion’s radial modes show good agreement with the electric- field noise spectral density expected from literature given the chosen mode frequency and nearest ion-to-electrode distance of 70 µm. Finally, we present the operation of a first multi-layer ion trap whose electrode layout features a 3-dimensional microwave conductor intended for performing microwave-driven two-qubit gates. Following a characterization of the resulting near-field pat- tern using a single ion as a local field probe, we find the multi-layer conductor to have significantly better field properties when compared to an equivalent single-layer design. Given these promising results, future work will focus on the integration of similar microwave circuitry in a multi-zone trap array as envisioned by the QCCD architecture.

•Jan 1, 2019•8 citations

Surface-electrode ion traps for scalable quantum computing

D. T. C. Allcock

The major challenges in trapped-ion quantum computation are to scale up few-ion experiments to many qubits and to improve control techniques so that quantum logic gates can be carried out with higher fidelities. This thesis reports experimental progress in both of these areas. In the early part of the thesis we describe the fabrication of a surface-electrode ion trap, the development of the apparatus and techniques required to operate it and the successful trapping of 40Ca+ ions. Notably we developed methods to control the orientation of the principal axes and to minimise ion micromotion. We propose a repumping scheme that simplifies heating rate measurements for ions with low-lying D levels, and use it to characterise the electric field noise in the trap. Surface-electrode traps are important because they offer a route to dense integration of electronic and optical control elements using existing microfabrication technology. We explore this scaling route by testing a series of three traps that were microfabricated at Sandia National Laboratories. Investigations of micromotion and charging of the surface by laser beams were carried out and improvements to future traps are suggested. Using one of these traps we also investigated anomalous electrical noise from the electrode surfaces and discovered that it can be reduced by cleaning with a pulsed laser. A factor of two decrease was observed; this represents the first in situ removal of this noise source, an important step towards higher gate fidelities. In the second half of the thesis we describe the design and construction of an experiment for the purpose of replacing laser-driven multi-qubit quantum logic gates with microwave-driven ones. We investigate magnetic-field-independent hyperfine qubits in 40Ca+ as suitable qubits for this scheme. We make a design study of how best to integrate an ion trap with the microwave conductors required to implement the gate and propose a novel integrated resonant structure. The trap was fabricated and ions were successfully loaded. Single-qubit experiments show that the microwave fields above the trap are in excellent agreement with software simulations. There are good prospects for demonstrating a multi-qubit gate in the near future. We conclude by discussing the possibilities for larger-scale quantum computation by combining microfabricated traps and microwave control.

•Jan 1, 2011•5 citations

A high-fidelity microwave driven two-qubit quantum logic gate in 43Ca+

M. A. Sepiol

Quantum computers offer great potential for significant speedup in executing certain algorithms compared to their classical counterparts. One of the most promising physical systems in which implementing such a device seems viable are trapped atomic ions. All of the fundamental operations needed for quantum information processing have already been experimentally demonstrated in trapped ion systems. Today, the remaining two obstacles are to improve the fidelities of these operations up to the point where quantum error correction techniques can be successfully applied, as well as to scale up the present systems to a higher number of quantum bits (qubits). This thesis addresses both issues. On the one hand, it decribes the experimental implementation of a high-fidelity two-qubit quantum logic gate, which is the most technically demanding fundamental operation to realise in practice. On the other hand, the presented work is carried out in a microfabricated surface ion trap – an architecture that holds the promise of scalability. The gate is applied directly to hyperfine "atomic clock" qubits in 43Ca+ ions using the near-field microwave magnetic field gradient produced by an integrated trap electrode. To protect the gate against fluctuating energy shifts of the qubit states, as well as to avoid the need to null the microwave field at the position of the ions, a dynamically decoupled Mølmer-Sørensen scheme is employed. After accounting for state preparation and measurement errors, the achieved gate fidelity is 99.7(1)%. In previous work, the same apparatus has been used to demonstrate coherence times of T*2 ≈ 50 s and all single-qubit operations with fidelity > 99.95%. To gain access to the "atomic clock" qubit transition in 43Ca+, a static magnetic field of 146G is applied. The resulting energy level Zeeman-structure is spread over many times the linewidth of the atomic transition used for Doppler cooling. This thesis presents a simple and robust method for Doppler cooling and obtaining high fluorescence from this qubit in spite of the complicated level structure. A temperature of 0.3mK, slightly below the Doppler limit, is reached.

•Jan 1, 2016•1 citation
This thesis reports high-fidelity near-field spatial microwave addressing of long-lived 43Ca+ "atomic clock" qubits performed in a two-zone single-layer surface-electrode ion trap. Addressing is implemented by using two of the trap's integrated microwave electrodes, one in each zone, to drive single-qubit rotations in the zone we choose to address whilst interferometrically cancelling the microwave field at the neighbour (non-addressed) zone. Using this field-nulling scheme, we measure a Rabi frequency ratio between addressed and non-addressed zones of up to 1400, from which we calculate an addressing error (or a spin-flip probability on the qubit transition) of 1e-6. Off-resonant excitation out of the qubit state is a more significant source of error in this experiment, but we also demonstrate polarisation control of the microwave field at an error level of 2e-5, which, if combined with individual-ion addressing, would be sufficient to suppress off-resonant excitation errors to the 1e-9 level. Further, this thesis presents preliminary results obtained with a micron-scale coupled-microstrip differential antenna probe that can be scanned over an ion-trap chip to map microwave magnetic near fields. The probe is designed to enable the measurement of fields at tens of microns above electrode surfaces and to act as an effective characterisation tool, speeding up design-fabrication-characterisation cycles in the production of new prototype microwave ion-trap chips. Finally, a new multi-layer design for an ion-trap chip which displays, in simulations, a 100-fold improvement in addressing performance, is presented. The chip electrode structure is designed to use the cancelling effect of microwave return currents to produce Rabi frequency ratios of order 1000 between trap zones using a single microwave electrode (i.e. without the need for nulling fields). If realised, this chip could be used to drive individually addressed single-qubit operations on arrays of memory qubits in parallel and with high fidelity.
Individual addressing of qubits is essential for scalable quantum computation. Spatial addressing allows unlimited numbers of qubits to share the same frequency, whilst enabling arbitrary parallel operations. We demonstrate addressing of long-lived 43Ca+^{43}\text{Ca}^+43Ca+ atomic clock qubits held in separate zones of a microfabricated surface trap with integrated microwave electrodes. By coherently cancelling the microwave field in one zone we measure a ratio of Rabi frequencies between addressed and non-addressed qubits of up to 1400, implying an addressing error of 1.3×10−61.3\times 10^{-6}1.3×10−6. Off-resonant excitation prevents this error level being directly demonstrated, but we also show polarization control of the microwave field with error 2×10−52\times 10^{-5}2×10−5, sufficient to suppress off-resonant excitation out of the qubit states to the ∼10−9\sim 10^{-9}∼10−9 level. Such polarization control could enable fast microwave operations.
Individual addressing of qubits is essential for scalable quantum computation. Spatial addressing allows unlimited numbers of qubits to share the same frequency, while enabling arbitrary parallel operations. We demonstrate addressing of long-lived 43Ca+^{43}\mathrm{Ca}^{+}43Ca+ ``atomic clock'' qubits held in separate zones ($960\phantom{\rule{0.28em}{0ex}}\ensuremath{\mu}\text{m}$ apart) of a microfabricated surface trap with integrated microwave electrodes. Such zones could form part of a ``quantum charge-coupled device'' architecture for a large-scale quantum information processor. By coherently canceling the microwave field in one zone we measure a ratio of Rabi frequencies between addressed and nonaddressed qubits of up to 1400, from which we calculate a spin-flip probability on the qubit transition of the nonaddressed ion of $1.3\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}6}$. Off-resonant excitation then becomes the dominant error process, at around $5\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}3}$. It can be prevented either by working at higher magnetic field, or by polarization control of the microwave field. We implement polarization control with error $2\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}5}$, which would suffice to suppress off-resonant excitation to the $\ensuremath{\sim}{10}^{\ensuremath{-}9}$ level if combined with spatial addressing. Such polarization control could also enable fast microwave operations.
High-fidelity spatial addressing of 43Ca+^{43}\text{Ca}^+43Ca+ qubits using near-field microwave control
Individual addressing of qubits is essential for scalable quantum computation. Spatial addressing allows unlimited numbers of qubits to share the same frequency, whilst enabling arbitrary parallel operations. We demonstrate addressing of long-lived 43Ca+^{43}\text{Ca}^+43Ca+ atomic clock qubits held in separate zones of a microfabricated surface trap with integrated microwave electrodes. By coherently cancelling the microwave field in one zone we measure a ratio of Rabi frequencies between addressed and non-addressed qubits of up to 1400, implying an addressing error of 1.3×10−61.3\times 10^{-6}1.3×10−6. Off-resonant excitation prevents this error level being directly demonstrated, but we also show polarization control of the microwave field with error 2×10−52\times 10^{-5}2×10−5, sufficient to suppress off-resonant excitation out of the qubit states to the ∼10−9\sim 10^{-9}∼10−9 level. Such polarization control could enable fast microwave operations.
Towards the goal of a large-scale quantum computer based on trapped ions, near-field microwaves represent a promising approach to perform the techni- cally challenging key operation of a two-qubit entangling gate. In this thesis we present the first microwave-driven two-qubit gate in 9Be+ ions employing a first-order field-independent qubit transition and a scalable surface-electrode ion trap at room temperature. We test the quality of the gate operation by producing a maximally entangled state and measuring the resulting state preparation fidelity in a reduced tomography procedure. For the best two- qubit gate achieved in the system we find this fidelity to be F = 98.2 ± 1.2 %. Following a comprehensive error analysis based on numerical simulations and experimentally determined input parameters, we identify current infidelity con- tributions of the apparatus. Here, the natural error source of the microwave near-field approach, namely fluctuating AC Zeeman shifts, could be reduced to the 10^−4 level due to the optimized design of the employed microwave con- ductor. As we find that the three largest errors can all be reduced upon purely technical improvements, higher fidelities are feasible in the future. Besides the gate realization, the thesis also comprises the initial characterization of the employed ion trap as well as the design and construction of a Raman laser at ∼ 313 nm which is utilized to perform near ground state cooling of radial modes of a single- and two-ion crystal. Here, ensuing heating rate measure- ments on a single-ion’s radial modes show good agreement with the electric- field noise spectral density expected from literature given the chosen mode frequency and nearest ion-to-electrode distance of 70 µm. Finally, we present the operation of a first multi-layer ion trap whose electrode layout features a 3-dimensional microwave conductor intended for performing microwave-driven two-qubit gates. Following a characterization of the resulting near-field pat- tern using a single ion as a local field probe, we find the multi-layer conductor to have significantly better field properties when compared to an equivalent single-layer design. Given these promising results, future work will focus on the integration of similar microwave circuitry in a multi-zone trap array as envisioned by the QCCD architecture.
The major challenges in trapped-ion quantum computation are to scale up few-ion experiments to many qubits and to improve control techniques so that quantum logic gates can be carried out with higher fidelities. This thesis reports experimental progress in both of these areas. In the early part of the thesis we describe the fabrication of a surface-electrode ion trap, the development of the apparatus and techniques required to operate it and the successful trapping of 40Ca+ ions. Notably we developed methods to control the orientation of the principal axes and to minimise ion micromotion. We propose a repumping scheme that simplifies heating rate measurements for ions with low-lying D levels, and use it to characterise the electric field noise in the trap. Surface-electrode traps are important because they offer a route to dense integration of electronic and optical control elements using existing microfabrication technology. We explore this scaling route by testing a series of three traps that were microfabricated at Sandia National Laboratories. Investigations of micromotion and charging of the surface by laser beams were carried out and improvements to future traps are suggested. Using one of these traps we also investigated anomalous electrical noise from the electrode surfaces and discovered that it can be reduced by cleaning with a pulsed laser. A factor of two decrease was observed; this represents the first in situ removal of this noise source, an important step towards higher gate fidelities. In the second half of the thesis we describe the design and construction of an experiment for the purpose of replacing laser-driven multi-qubit quantum logic gates with microwave-driven ones. We investigate magnetic-field-independent hyperfine qubits in 40Ca+ as suitable qubits for this scheme. We make a design study of how best to integrate an ion trap with the microwave conductors required to implement the gate and propose a novel integrated resonant structure. The trap was fabricated and ions were successfully loaded. Single-qubit experiments show that the microwave fields above the trap are in excellent agreement with software simulations. There are good prospects for demonstrating a multi-qubit gate in the near future. We conclude by discussing the possibilities for larger-scale quantum computation by combining microfabricated traps and microwave control.
Quantum computers offer great potential for significant speedup in executing certain algorithms compared to their classical counterparts. One of the most promising physical systems in which implementing such a device seems viable are trapped atomic ions. All of the fundamental operations needed for quantum information processing have already been experimentally demonstrated in trapped ion systems. Today, the remaining two obstacles are to improve the fidelities of these operations up to the point where quantum error correction techniques can be successfully applied, as well as to scale up the present systems to a higher number of quantum bits (qubits). This thesis addresses both issues. On the one hand, it decribes the experimental implementation of a high-fidelity two-qubit quantum logic gate, which is the most technically demanding fundamental operation to realise in practice. On the other hand, the presented work is carried out in a microfabricated surface ion trap – an architecture that holds the promise of scalability. The gate is applied directly to hyperfine "atomic clock" qubits in 43Ca+ ions using the near-field microwave magnetic field gradient produced by an integrated trap electrode. To protect the gate against fluctuating energy shifts of the qubit states, as well as to avoid the need to null the microwave field at the position of the ions, a dynamically decoupled Mølmer-Sørensen scheme is employed. After accounting for state preparation and measurement errors, the achieved gate fidelity is 99.7(1)%. In previous work, the same apparatus has been used to demonstrate coherence times of T*2 ≈ 50 s and all single-qubit operations with fidelity > 99.95%. To gain access to the "atomic clock" qubit transition in 43Ca+, a static magnetic field of 146G is applied. The resulting energy level Zeeman-structure is spread over many times the linewidth of the atomic transition used for Doppler cooling. This thesis presents a simple and robust method for Doppler cooling and obtaining high fluorescence from this qubit in spite of the complicated level structure. A temperature of 0.3mK, slightly below the Doppler limit, is reached.