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arXiv:2207.11364 · Quantum Science and Technology

Cryogenic ion trap system for high-fidelity near-field microwave-driven quantum logic

Marius Weber, Clemens Löschnauer, J Wolf, Mario F. Gely, R Hanley, Joseph F. Goodwin, Christopher J. Ballance, T. P. Harty, D M Lucas

Published Sep 20, 2023• 18 citations
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Abstract

Abstract We report the design, fabrication, and characterization of a cryogenic ion trap system for the implementation of quantum logic driven by near-field microwaves. The trap incorporates an on-chip microwave resonator with an electrode geometry designed to null the microwave field component that couples directly to the qubit, while giving a large field gradient for driving entangling logic gates. We map the microwave field using a single 43Ca+ ion, and measure the ion trapping lifetime and motional mode heating rates for one and two ions.

DOI
10.1088/2058-9565/acfba8

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Abstract We report the design, fabrication, and characterization of a cryogenic ion trap system for the implementation of quantum logic driven by near-field microwaves. The trap incorporates an on-chip microwave resonator with an electrode geometry designed to null the microwave field component that couples directly to the qubit, while giving a large field gradient for driving entangling logic gates. We map the microwave field using a single 43Ca+ ion, and measure the ion trapping lifetime and motional mode heating rates for one and two ions.
This work describes the design and implementation of a new apparatus to achieve quantum information processing in trapped ions using microwave methods. The apparatus involves many design improvements over a previous quantum processing experiment which achieved the highest single-qubit gate fidelity, longest coherence time, and highest microwave based two-qubit fidelity. The goal of this new experiment is a two-qubit gate speed and a fidelity improvement of a factor of 10, making microwave based gates much more feasible as quantum processors. To this end, a novel clock qubit within 43Ca+ is chosen, and the ion height is nearly halved. An anticipated heating rate increase is counteracted by the use of cryogenics. A novel ion chip design is implemented via wafer-scale fabrication and subsequently attached using a novel eutectic bonding technique. The implementation required many design and fabrication problems to be solved; these are described. The vacuum system reaches < 10−11 mbar even at room temperature, lowering experimental difficulty and allowing for performance comparisons at a wide temperature range. A new experiment control system, ARTIQ, and corresponding Sinara hardware is used for control. Experimental results achieved so far include a study of contributing factors to the ion loading rate, and a comparison between the designed and measured microwave fields. All results achieved to date are compatible with the main speed and fidelity goal, which should be achieved in the near future.
We describe the design, fabrication, and testing of a surface-electrode ion trap, which incorporates microwave waveguides, resonators, and coupling elements for the manipulation of trapped ion qubits using near-field microwaves. The trap is optimised to give a large microwave field gradient to allow state-dependent manipulation of the ions' motional degrees of freedom, the key to multi-qubit entanglement. The microwave field near the centre of the trap is characterised by driving hyperfine transitions in a single laser-cooled 43Ca+ ion.
We demonstrate a two-qubit logic gate driven by near-field microwaves in a room-temperature microfabricated surface ion trap. We introduce a dynamically decoupled gate method, which stabilizes the qubits against fluctuating energy shifts and avoids the need to null the microwave field. We use the gate to produce a Bell state with fidelity 99.7(1)%, after accounting for state preparation and measurement errors. The gate is applied directly to ^{43}Ca^{+} hyperfine "atomic clock" qubits (coherence time T_{2}^{*}≈50 s) using the oscillating magnetic field gradient produced by an integrated microwave electrode.
Trapped ions, together with superconducting qubits, are one of the two leading hardware platforms for scalable quantum information processing. The development of quantum computers represents a major technological breakthrough comparable to the introduction of classical computing. The benefits of this technology are currently limited by the technical capability to perform high fidelity entangling operations on the qubits. When gate fidelities surpass the fault-tolerance threshold it becomes possible, through error correction, to increase the system size to an arbitrary number of qubits. In this cumulative thesis we address some of the issues in the scalability of the trapped-ion quantum computer based on microwave near-fields. In this approach, gate operations on one or multiple ions are driven by an oscillating magnetic field generated by a current flowing through a conductor. In the first part of this work we discuss the design of traps toward the implementation of large scale systems. We introduce the basic design of a surface-electrode ion trap with embedded microwave conductors. The oscillating magnetic field required to perform the operations is generated by a single optimized conductor. We discuss the simulation and characterization of the magnetic field pattern, which is fixed by the microwave conductor design. In addition, we demonstrate the capability to simulate, fabricate and characterize a multilayer surface ion trap. Multilayer traps are a key aspect for scalability since they are necessary to achieve large system sizes, with many `ion registers', where the registers are interconnected by physically transporting ions between them. In the second part of this thesis we demonstrate the implementation of a two-qubit entangling gate and we explore the possibilities offered by quantum control methods to improve its fidelity. We perform an entangling gate on two 9Be+ ions and measure a Bell state fidelity of 98.2(1.2)%. Error characterization shows that the gate result is limited by technical issues connected to the ions' motional states. To reduce these errors we apply amplitude modulation of the gate microwave drive. After stabilization of the ions' radial modes, we obtain an amplitude modulated gate with infidelity in the 10^-3 range. The result is confirmed by analyzing the data using three different methods. Using additional dynamic decoupling techniques, these results could bring microwave near-field gates past the fault-tolerance threshold.
Microwave-driven quantum logic gates in trapped-ion systems offer a scalable and laser-free alternative to optical control, with the potential for robust integration into surface-electrode trap architectures. In this work, we present a systematic design guideline for planar ion traps optimized for fast two-qubit microwave gates using chip-integrated conductors. We investigate two electrode configurations, one employing a single microwave line for driving σ transitions, and another with two symmetric lines for π transitions. Through finite-element simulations, we analyze ion height, magnetic field gradients, heating effects, and gate durations under realistic cryogenic conditions. Our results show that both configurations can achieve two-qubit gate times in the order of 10 μs for Be+9 and Ca+40 ions.