We demonstrate a two-qubit logic gate driven by near-field microwaves in a room-temperature microfabricated surface ion trap. We introduce a dynamically decoupled gate method, which stabilizes the qubits against fluctuating energy shifts and avoids the need to null the microwave field. We use the gate to produce a Bell state with fidelity 99.7(1)%, after accounting for state preparation and measurement errors. The gate is applied directly to ^{43}Ca^{+} hyperfine "atomic clock" qubits (coherence time T_{2}^{*}≈50 s) using the oscillating magnetic field gradient produced by an integrated microwave electrode.
We demonstrate a two-qubit logic gate driven by near-field microwaves in a room-temperature microfabricated surface ion trap. We introduce a dynamically decoupled gate method, which stabilizes the qubits against fluctuating energy shifts and avoids the need to null the microwave field. We use the gate to produce a Bell state with fidelity 99.7(1)%, after accounting for state preparation and measurement errors. The gate is applied directly to ^{43}Ca^{+} hyperfine "atomic clock" qubits (coherence time T_{2}^{*}≈50 s) using the oscillating magnetic field gradient produced by an integrated microwave electrode.
Quantum computers offer great potential for significant speedup in executing certain algorithms compared to their classical counterparts. One of the most promising physical systems in which implementing such a device seems viable are trapped atomic ions. All of the fundamental operations needed for quantum information processing have already been experimentally demonstrated in trapped ion systems. Today, the remaining two obstacles are to improve the fidelities of these operations up to the point where quantum error correction techniques can be successfully applied, as well as to scale up the present systems to a higher number of quantum bits (qubits). This thesis addresses both issues. On the one hand, it decribes the experimental implementation of a high-fidelity two-qubit quantum logic gate, which is the most technically demanding fundamental operation to realise in practice. On the other hand, the presented work is carried out in a microfabricated surface ion trap – an architecture that holds the promise of scalability. The gate is applied directly to hyperfine "atomic clock" qubits in 43Ca+ ions using the near-field microwave magnetic field gradient produced by an integrated trap electrode. To protect the gate against fluctuating energy shifts of the qubit states, as well as to avoid the need to null the microwave field at the position of the ions, a dynamically decoupled Mølmer-Sørensen scheme is employed. After accounting for state preparation and measurement errors, the achieved gate fidelity is 99.7(1)%. In previous work, the same apparatus has been used to demonstrate coherence times of T*2 ≈ 50 s and all single-qubit operations with fidelity > 99.95%. To gain access to the "atomic clock" qubit transition in 43Ca+, a static magnetic field of 146G is applied. The resulting energy level Zeeman-structure is spread over many times the linewidth of the atomic transition used for Doppler cooling. This thesis presents a simple and robust method for Doppler cooling and obtaining high fluorescence from this qubit in spite of the complicated level structure. A temperature of 0.3mK, slightly below the Doppler limit, is reached.
Microwave-driven logic is a promising alternative to laser control in scaling trapped-ion based quantum processors. We implement Mølmer-Sørensen two-qubit gates on 43 Ca + hyperfine clock qubits in a cryogenic ( ≈ 25 K ) surface trap, driven by near-field microwaves. We achieve gate durations of 154 µs [with 1.0(2)% error] and 331 µs [0.5(1)% error], which approaches the performance of typical laser-driven gates. In the 331 µs gate, we demonstrate a Walsh-modulated dynamical decoupling scheme which suppresses errors due to fluctuations in the qubit frequency as well as imperfections in the decoupling drive itself. Published by the American Physical Society 2024
Trapped ions, together with superconducting qubits, are one of the two leading hardware platforms for scalable quantum information processing. The development of quantum computers represents a major technological breakthrough comparable to the introduction of classical computing. The benefits of this technology are currently limited by the technical capability to perform high fidelity entangling operations on the qubits. When gate fidelities surpass the fault-tolerance threshold it becomes possible, through error correction, to increase the system size to an arbitrary number of qubits. In this cumulative thesis we address some of the issues in the scalability of the trapped-ion quantum computer based on microwave near-fields. In this approach, gate operations on one or multiple ions are driven by an oscillating magnetic field generated by a current flowing through a conductor. In the first part of this work we discuss the design of traps toward the implementation of large scale systems. We introduce the basic design of a surface-electrode ion trap with embedded microwave conductors. The oscillating magnetic field required to perform the operations is generated by a single optimized conductor. We discuss the simulation and characterization of the magnetic field pattern, which is fixed by the microwave conductor design. In addition, we demonstrate the capability to simulate, fabricate and characterize a multilayer surface ion trap. Multilayer traps are a key aspect for scalability since they are necessary to achieve large system sizes, with many `ion registers', where the registers are interconnected by physically transporting ions between them. In the second part of this thesis we demonstrate the implementation of a two-qubit entangling gate and we explore the possibilities offered by quantum control methods to improve its fidelity. We perform an entangling gate on two 9Be+ ions and measure a Bell state fidelity of 98.2(1.2)%. Error characterization shows that the gate result is limited by technical issues connected to the ions' motional states. To reduce these errors we apply amplitude modulation of the gate microwave drive. After stabilization of the ions' radial modes, we obtain an amplitude modulated gate with infidelity in the 10^-3 range. The result is confirmed by analyzing the data using three different methods. Using additional dynamic decoupling techniques, these results could bring microwave near-field gates past the fault-tolerance threshold.
This thesis is concerned with the development of an intermediate magnetic field "clock-qubit" in 43Ca+ at 146G and techniques to manipulate this qubit using microwaves and lasers. While 43Ca+ has previously been used as a qubit, its relatively complicated level structure - with a nuclear spin of 7/2 and low-lying D-states -- makes cooling it in the intermediate field an intimidating prospect. As a result, previous experiments have used small magnetic fields of a few gauss where coherence times are limited and off-resonant excitation is a significant source of experimental error. We demonstrate a simple scheme that allows 43Ca+ to be cooled in the intermediate field without any additional experimental complexity compared with low fields. Using the clock-qubit, we achieve a coherence time of T*2 = 50 (10)s - the longest demonstrated in any single qubit. We also demonstrate a combined state preparation and measurement error of 6.8(6)x 10-4 - the lowest achieved for a hyperfine trapped ion qubit [NVG+13] - and single-qubit logic gates with average errors of 1.0(3) x 10-6 - more than an order of magnitude better than the previous record [BWC+11]. These results represent the state-of-the-art in the field of single-qubit control. Moreover, we achieve them all in a single scalable room-temperature ion trap using experimentally robust techniques and without relying on the use of narrow-linewidth lasers, magnetic field screening or dynamical decoupling techniques. We also present work on a recent scheme [OWC+11] to drive two-qubit gates using microwaves. We have constructed an ion trap with integrated microwave circuitry to perform these gates. Using this trap, we have driven motional sideband transitions, demonstrating the spin-motion coupling that underlies the two-qubit gate. We present an analysis of likely sources of experimental error during a future two-qubit gate and the design and preliminary characterisation of apparatus to minimise the main error contributions. Using this apparatus, we hope to perform a two-qubit gate in the near future.
Towards the goal of a large-scale quantum computer based on trapped ions, near-field microwaves represent a promising approach to perform the techni- cally challenging key operation of a two-qubit entangling gate. In this thesis we present the first microwave-driven two-qubit gate in 9Be+ ions employing a first-order field-independent qubit transition and a scalable surface-electrode ion trap at room temperature. We test the quality of the gate operation by producing a maximally entangled state and measuring the resulting state preparation fidelity in a reduced tomography procedure. For the best two- qubit gate achieved in the system we find this fidelity to be F = 98.2 ± 1.2 %. Following a comprehensive error analysis based on numerical simulations and experimentally determined input parameters, we identify current infidelity con- tributions of the apparatus. Here, the natural error source of the microwave near-field approach, namely fluctuating AC Zeeman shifts, could be reduced to the 10^−4 level due to the optimized design of the employed microwave con- ductor. As we find that the three largest errors can all be reduced upon purely technical improvements, higher fidelities are feasible in the future. Besides the gate realization, the thesis also comprises the initial characterization of the employed ion trap as well as the design and construction of a Raman laser at ∼ 313 nm which is utilized to perform near ground state cooling of radial modes of a single- and two-ion crystal. Here, ensuing heating rate measure- ments on a single-ion’s radial modes show good agreement with the electric- field noise spectral density expected from literature given the chosen mode frequency and nearest ion-to-electrode distance of 70 µm. Finally, we present the operation of a first multi-layer ion trap whose electrode layout features a 3-dimensional microwave conductor intended for performing microwave-driven two-qubit gates. Following a characterization of the resulting near-field pat- tern using a single ion as a local field probe, we find the multi-layer conductor to have significantly better field properties when compared to an equivalent single-layer design. Given these promising results, future work will focus on the integration of similar microwave circuitry in a multi-zone trap array as envisioned by the QCCD architecture.
Abstract We report the design, fabrication, and characterization of a cryogenic ion trap system for the implementation of quantum logic driven by near-field microwaves. The trap incorporates an on-chip microwave resonator with an electrode geometry designed to null the microwave field component that couples directly to the qubit, while giving a large field gradient for driving entangling logic gates. We map the microwave field using a single 43Ca+ ion, and measure the ion trapping lifetime and motional mode heating rates for one and two ions.