Two level systems that can be reliably controlled and measured hold promise as qubits both for metrology and for quantum information science. Since a fluctuating environment limits the performance of qubits in both capacities, understanding environmental coupling and dynamics is key to improving qubit performance. We show measurements of the level splitting and dephasing due to the voltage noise of a GaAs singlet-triplet qubit during exchange oscillations. Unexpectedly, the voltage fluctuations are non-Markovian even at high frequencies and exhibit a strong temperature dependence. This finding has impacts beyond singlet-triplet qubits since nearly all solid state qubits suffer from some kind of charge noise. The magnitude of the fluctuations allows the qubit to be used as a charge sensor with a sensitivity of 2 × 10(-8)e/sqrt[Hz], 2 orders of magnitude better than a quantum-limited rf single electron transistor. Based on these measurements, we provide recommendations for improving qubit coherence, allowing for higher fidelity operations and improved charge sensitivity.
Two level systems that can be reliably controlled and measured hold promise as qubits both for metrology and for quantum information science. Since a fluctuating environment limits the performance of qubits in both capacities, understanding environmental coupling and dynamics is key to improving qubit performance. We show measurements of the level splitting and dephasing due to the voltage noise of a GaAs singlet-triplet qubit during exchange oscillations. Unexpectedly, the voltage fluctuations are non-Markovian even at high frequencies and exhibit a strong temperature dependence. This finding has impacts beyond singlet-triplet qubits since nearly all solid state qubits suffer from some kind of charge noise. The magnitude of the fluctuations allows the qubit to be used as a charge sensor with a sensitivity of 2 × 10(-8)e/sqrt[Hz], 2 orders of magnitude better than a quantum-limited rf single electron transistor. Based on these measurements, we provide recommendations for improving qubit coherence, allowing for higher fidelity operations and improved charge sensitivity.
Electron spins confined in semiconductor quantum dots are emerging as a promising system to study quantum information science and to perform sensitive metrology. Their weak interaction with the environment leads to long coherence times and robust storage for quantum information, and the intrinsic tunability of semiconductors allows for controllable operations, initialization, and readout of their quantum state. These spin qubits are also promising candidates for the building block for a scalable quantum information processor due to their prospects for scalability and miniaturization. owever, several obstacles limit the performance of quantum information experiments in these systems. For example, the weak coupling to the environment makes inter-qubit operations challenging, and a fluctuating nuclear magnetic field limits the performance of single-qubit operations.\n\n\n\nThe focus of this thesis will be several experiments which address some of the outstanding problems in semiconductor spin qubits, in particular, singlet-triplet (S-T0) qubits. We use these qubits to probe both the electric field and magnetic field noise that limit the performance of these qubits. The magnetic noise bath is probed with high bandwidth and precision using novel techniques borrowed from the field of Hamiltonian learning, which are effective due to the rapid control and readout available in S-T0 qubits. These findings allow us to effectively undo the undesired effects of the fluctuating nuclear magnetic field by tracking them in real-time, and we demonstrate a 30-fold improvement in the coherence time T2*.\n\n\n\nWe probe the voltage noise environment of the qubit using coherent qubit oscillations, which is partially enabled by control of the nuclear magnetic field. We find that the voltage noise bath is frequency- dependent, even at frequencies as high as 1MHz, and it shows surprising and, as of yet, unexplained temperature dependence. We leverage this knowledge of the voltage noise environment, the nuclear magnetic field control, as well as new techniques for calibrated measurement of the density matrix in a singlet-triplet qubit to entangle two adjacent single-triplet qubits. We fully characterize the generated entangled states and prove that they are, indeed, entangled.\n\n\n\nThis work opens new opportunities to use qubits as sensors for improved metrological capabilities, as well as for improved quantum information processing. The singlet-triplet qubit is unique in that it can be used to probe two fundamentally different noise baths, which are important for a large variety of solid state qubits. More specifically, this work establishes the singlet-triplet qubit as a viable candidate for the building block of a scalable quantum information processor.
Semiconductor spin qubits are a promising platform for quantum computing but remain vulnerable to charge noise. Accurate, in situ measurement of charge noise could enable closed-loop control and improve qubit performance. Here, we propose a method for real-time detection of charge noise using a silicon singlet-triplet qubit with one electron initialized in an excited valley state. This valley excitation acts as a spectator degree of freedom, coupled to a high-quality resonator via the exchange interaction, which is sensitive to charge-noise-induced voltage fluctuations. Dispersive readout of the resonator enables a continuous, classical measurement of exchange fluctuations during qubit operation. Signal-to-noise analysis shows that, under realistic device parameters, sub-millisecond measurement times are possible using a quantum-limited amplifier. Even without such an amplifier, similar performance is achievable with appropriately engineered resonator parameters. This approach allows the probe to monitor slow drift in exchange in real time, opening the door to feedback and feedforward strategies for maintaining high-fidelity quantum operations. Importantly, the protocol preserves spin coherence and can be run concurrently with qubit logic gates.
Abstract Semiconductor spin qubits are a promising platform for quantum computing but remain vulnerable tocharge noise. Accurate, in situ measurement of charge noise could enable closed-loop control andimprove qubit performance. Here, we propose a method for real-time detection of charge noise usinga silicon singlet-triplet qubit in which one electron is initialized in an excited valley state. This valleyexcitation acts as a spectator degree of freedom coupled to a high-quality resonator via the exchangeinteraction, which is sensitive to charge-noise-induced voltage fluctuations. Dispersive readout of theresonator enables a continuous, classical measurement of exchange fluctuations during qubitoperation. Signal-to-noise analysis shows that, under realistic device parameters, sub-millisecondmeasurement times are achievable using a quantum-limited amplifier. Even without such an amplifier,similar performance is achievable with appropriately engineered resonator parameters. This approachenables real-time monitoring of slow drifts in exchange, opening the door to feedback and feedforwardstrategies for maintaining high-fidelity quantum operations. Importantly, the protocol preserves spincoherence and can be executed concurrently with qubit logic gates.
Decoherence due to charge noise is one of the central challenges in using spin qubits in semiconductor quantum dots as a platform for quantum information processing. Recently, it has been experimentally demonstrated in both Si and GaAs singlet-triplet qubits that the effects of charge noise can be suppressed if qubit operations are implemented using symmetric barrier control instead of the standard tilt control. Here, we investigate the key issue of whether the benefits of barrier control persist over the entire set of single-qubit gates by performing randomized benchmarking simulations. We find the surprising result that the improvement afforded by barrier control depends sensitively on the amount of spin noise: for the minimal nuclear spin noise levels present in Si, the coherence time improves by more than 2 orders of magnitude whereas in GaAs, by contrast the coherence time is essentially the same for barrier and tilt control. However, we establish that barrier control becomes beneficial if qubit operations are performed using a new family of composite pulses that reduce gate times by up to 90%. With these optimized pulses, barrier control is the best way to achieve high-fidelity quantum gates in singlet-triplet qubits.
We study the dynamics of a pulse-gated semiconductor double-quantum-dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from charge noise are largest near the singlet-triplet avoided level crossing, the visibility of the oscillations is low when the singlet-triplet avoided level crossing occurs in the vicinity of the charge degeneracy point crossed during the manipulation, but there is only modest dephasing at the large detuning value at which the quantum phase accumulates. This theory agrees well with experimental data and predicts that the visibility can be increased greatly by appropriate tuning of the interdot tunneling rate.
Several experiments have shown qubit coherence decay of the form $exp[\ensuremath{-}{(t/{T}_{2})}^{\ensuremath{\alpha}}]$ due to environmental charge-noise fluctuations. We present a microscopic description for temperature dependencies of the parameters T2 and $\ensuremath{\alpha}$. Our description is appropriate to qubits in semiconductors interacting with spurious two-level charge fluctuators coupled to a thermal bath. We find distinct power-law dependencies of T2 and $\ensuremath{\alpha}$ on temperature depending on the nature of the interaction of the fluctuators with the associated bath. We consider fluctuator dynamics induced by first- and second-order tunneling with a continuum of delocalized electron states. We also study one- and two-phonon processes for fluctuators in either GaAs or Si. These results can be used to identify dominant charge-dephasing mechanisms and suppress them.