The ground-state properties of a paramagnetic Mott insulator at half-filling are investigated in the presence of an external electric field using the inhomogeneous Gutzwiller approximation for a single-band Hubbard model in a slab geometry. We find that the metal-insulator transition is shifted toward higher Hubbard repulsions by applying an electric field perpendicular to the slab. The main reason is the accumulation of charges near the surface. The spatial distribution of site-dependent quasiparticle weight shows that it is maximal in a few layers beneath the surface, while the central sites where the field is screened have a very low quasiparticle weight. Our results show that above a critical-field value, states near the surface will be metallic, while the bulk quasiparticle weight is extremely suppressed but never vanishing, even for large Hubbard repulsions above the bulk zero-field critical value. Below the critical-field value, our results hint toward an insulating state in which the electric field is totally screened and the slab is again at half-filling.
The correlation-driven transition from a paramagnetic metal to a paramagnetic Mott-Hubbard insulator is studied within the half-filled Hubbard model for a thin-film geometry. We consider simple-cubic films with different low-index surfaces and film thickness d ranging from d = 1 (twodimensional) up to d = 8. Using the dynamical mean-field theory, the lattice (film) problem is selfconsistently mapped onto a set of d single-impurity Anderson models which are indirectly coupled via the respective baths of conduction electrons. The impurity models are solved at zero temperature using the exact-diagonalization algorithm. We investigate the layer and thickness dependence of the electronic structure in the low-energy regime. Effects due to the finite film thickness are found to be the more pronounced the lower is the film-surface coordination number. For the comparatively open sc(111) geometry we find a strong layer dependence of the quasi-particle weight while it is much less pronounced for the sc(110) and the sc(100) film geometries. For a given geometry and thickness d there is a unique critical interaction strength Uc2(d) at which all effective masses diverge and there is a unique strength Uc1(d) where the insulating solution disappears. Uc2(d) and Uc1(d) gradually increase with increasing thickness eventually approaching their bulk values. A simple analytical argument explains the complete geometry and thickness dependence of Uc2. Uc1 is found to scale linearly with Uc2. I.
The dynamical mean-field theory (DMFT) is employed to study the correlation-driven metal-insulator transition in the semi-infinite Hubbard model at half-filling and zero temperature. We consider the low-index surfaces of the three-dimensional simple-cubic lattice, and systematically vary the model parameters at the very surface, the intralayer and interlayer surface hopping, and the surface Coulomb interaction. Within the DMFT the self-energy functional is assumed to be local. Therewith, the problem is self-consistently mapped onto a set of coupled effective impurity models corresponding to the inequivalent layers parallel to the surface. Assuming that the influence of the high-energy Hubbard bands on the low-energy quasiparticle resonance can be neglected at the critical point, a simplified ``linearized DMFT'' becomes possible. The linearized theory, however, is formally equivalent to the Weiss molecular-field theory for the semi-infinite Ising model. This implies that qualitatively the rich phenomenology of the Landau description of second-order phase transitions at surfaces has a direct analog for the surface Mott transition. Motivated by this formal analogy, we work out the predictions of the linearized DMFT in detail. It is found that under certain circumstances the surface of a Mott insulator can be metallic, while a Mott-insulating surface of a normal metal is not possible. We derive the corresponding phase diagrams, the (mean-field) critical exponents and the critical profiles of the quasiparticle weight. The results are confirmed by a fully numerical evaluation of the DMFT equations using the exact-diagonalization (ED) method. By means of the ED approach, we especially investigate the noncritical parts of the phase diagrams and discuss the U and layer dependence of the quasi-particle weight. For strong modifications of the surface model parameters, the surface low-energy electronic structure dynamically decouples from the bulk.
We investigate the local moment formation in the half-filled
SU(N) Hubbard model under a staggered ionic potential. As the Hubbard
U increases, the charge fluctuations are suppressed and eventually frozen when
U is above a critical value
Uc, marking the development of well-defined local moment with integer
m fermions on the A sublattice and $(N\ensuremath{-}m)$ fermions on the B sublattice, respectively. We obtain an analytical solution for
Uc for the paramagnetic ground state within the variational Gutzwiller approximation and renormalized mean field theory. For large
N,
Uc is found to depend on
N linearly with fixed
m/N, but sublinearly with fixed
m. The local moment formation is accompanied by a peculiar phase transition from the band insulator to the Mott insulator, where the ionic potential and quasiparticle weight are renormalized to zero simultaneously. Inside the Mott phase, the low-energy physics is described by the
SU(N) Heisenberg model with conjugate representations, which is widely studied in the literature.
We address the nature of the Mott transition in the Hubbard model at half-filling using cluster dynamical mean field theory (DMFT). We compare cluster-DMFT results with those of single-site DMFT. We show that inclusion of the short-range correlations on top of the on-site correlations does not change the order of the transition between the paramagnetic metal and the paramagnetic Mott insulator, which remains first order. However, the short range correlations reduce substantially the critical U and modify the shape of the transition lines. Moreover, they lead to very different physical properties of the metallic and insulating phases near the transition point. Approaching the transition from the metallic side, we find an anomalous metallic state with very low coherence scale. The insulating state is characterized by the narrow Mott gap with pronounced peaks at the gap edge.
We study the effect of spatial inhomogeneity on the physics of a strongly correlated electron system exhibiting a metallic phase and a Mott insulating phase, represented by the simple Hubbard model. In three dimensions, we consider various geometries, including vacuum-metal-vacuum, a junction between a weakly and a strongly correlated metal, and finally the double junctions metal-Mott insulator-metal and metal-strongly correlated metal-metal. We apply the self-consistent Gutzwiller technique recently developed in our group, whose approximate nature is compensated by an extreme flexibility, ability to treat very large systems, and physical transparency. The main general result is a clear characterization of the position-dependent metallic quasiparticle spectral weight. Its behavior at interfaces reveals the ubiquitous presence of exponential decays and crossovers with decay lengths of clear physical significance. The decay length of the metallic strength in a weakly-strongly correlated metal interface is due to poor screening in the strongly correlated side. That from a metal into a Mott insulator is due to tunneling. In both cases, the decay length is a bulk property and diverges with a critical exponent ($\ensuremath{\sim}1/2$ in the present approximation, mean field in character) as the (continuous, paramagnetic) Mott transition is approached.