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Dynamical mean-field study of the Mott transition in thin films

Michael Potthoff, Wolfgang Nolting

Published Jan 1, 1998• 13 citations
OpenAlex

Abstract

The correlation-driven transition from a paramagnetic metal to a paramagnetic Mott-Hubbard insulator is studied within the half-filled Hubbard model for a thin-film geometry. We consider simple-cubic films with different low-index surfaces and film thickness d ranging from d = 1 (twodimensional) up to d = 8. Using the dynamical mean-field theory, the lattice (film) problem is selfconsistently mapped onto a set of d single-impurity Anderson models which are indirectly coupled via the respective baths of conduction electrons. The impurity models are solved at zero temperature using the exact-diagonalization algorithm. We investigate the layer and thickness dependence of the electronic structure in the low-energy regime. Effects due to the finite film thickness are found to be the more pronounced the lower is the film-surface coordination number. For the comparatively open sc(111) geometry we find a strong layer dependence of the quasi-particle weight while it is much less pronounced for the sc(110) and the sc(100) film geometries. For a given geometry and thickness d there is a unique critical interaction strength Uc2(d) at which all effective masses diverge and there is a unique strength Uc1(d) where the insulating solution disappears. Uc2(d) and Uc1(d) gradually increase with increasing thickness eventually approaching their bulk values. A simple analytical argument explains the complete geometry and thickness dependence of Uc2. Uc1 is found to scale linearly with Uc2. I.

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The correlation-driven transition from a paramagnetic metal to a paramagnetic Mott-Hubbard insulator is studied within the half-filled Hubbard model for a thin-film geometry. We consider simple-cubic films with different low-index surfaces and film thickness d ranging from d = 1 (twodimensional) up to d = 8. Using the dynamical mean-field theory, the lattice (film) problem is selfconsistently mapped onto a set of d single-impurity Anderson models which are indirectly coupled via the respective baths of conduction electrons. The impurity models are solved at zero temperature using the exact-diagonalization algorithm. We investigate the layer and thickness dependence of the electronic structure in the low-energy regime. Effects due to the finite film thickness are found to be the more pronounced the lower is the film-surface coordination number. For the comparatively open sc(111) geometry we find a strong layer dependence of the quasi-particle weight while it is much less pronounced for the sc(110) and the sc(100) film geometries. For a given geometry and thickness d there is a unique critical interaction strength Uc2(d) at which all effective masses diverge and there is a unique strength Uc1(d) where the insulating solution disappears. Uc2(d) and Uc1(d) gradually increase with increasing thickness eventually approaching their bulk values. A simple analytical argument explains the complete geometry and thickness dependence of Uc2. Uc1 is found to scale linearly with Uc2. I.
The dynamical mean-field theory (DMFT) is employed to study the correlation-driven metal-insulator transition in the semi-infinite Hubbard model at half-filling and zero temperature. We consider the low-index surfaces of the three-dimensional simple-cubic lattice, and systematically vary the model parameters at the very surface, the intralayer and interlayer surface hopping, and the surface Coulomb interaction. Within the DMFT the self-energy functional is assumed to be local. Therewith, the problem is self-consistently mapped onto a set of coupled effective impurity models corresponding to the inequivalent layers parallel to the surface. Assuming that the influence of the high-energy Hubbard bands on the low-energy quasiparticle resonance can be neglected at the critical point, a simplified ``linearized DMFT'' becomes possible. The linearized theory, however, is formally equivalent to the Weiss molecular-field theory for the semi-infinite Ising model. This implies that qualitatively the rich phenomenology of the Landau description of second-order phase transitions at surfaces has a direct analog for the surface Mott transition. Motivated by this formal analogy, we work out the predictions of the linearized DMFT in detail. It is found that under certain circumstances the surface of a Mott insulator can be metallic, while a Mott-insulating surface of a normal metal is not possible. We derive the corresponding phase diagrams, the (mean-field) critical exponents and the critical profiles of the quasiparticle weight. The results are confirmed by a fully numerical evaluation of the DMFT equations using the exact-diagonalization (ED) method. By means of the ED approach, we especially investigate the noncritical parts of the phase diagrams and discuss the U and layer dependence of the quasi-particle weight. For strong modifications of the surface model parameters, the surface low-energy electronic structure dynamically decouples from the bulk.
We address the nature of the Mott transition in the Hubbard model at half-filling using cluster dynamical mean field theory (DMFT). We compare cluster-DMFT results with those of single-site DMFT. We show that inclusion of the short-range correlations on top of the on-site correlations does not change the order of the transition between the paramagnetic metal and the paramagnetic Mott insulator, which remains first order. However, the short range correlations reduce substantially the critical U and modify the shape of the transition lines. Moreover, they lead to very different physical properties of the metallic and insulating phases near the transition point. Approaching the transition from the metallic side, we find an anomalous metallic state with very low coherence scale. The insulating state is characterized by the narrow Mott gap with pronounced peaks at the gap edge.
The density of states, the dynamic (optical) conductivity, and the phase diagram of the paramagnetic two-dimensional Anderson-Hubbard model with strong correlations and disorder are analyzed within the generalized dynamical mean field theory (DMFT + Σ approximation). Strong correlations are accounted by the DMFT, while disorder is taken into account via the appropriate generalization of the self-consistent theory of localization. We consider the two-dimensional system with the rectangular “bare” density of states (DOS). The DMFT effective single-impurity problem is solved by numerical renormalization group (NRG). The “correlated metal,” Mott insulator, and correlated Anderson insulator phases are identified from the evolution of the density of states, optical conductivity, and localization length, demonstrating both Mott-Hubbard and Anderson metal-insulator transitions in two-dimensional systems of finite size, allowing us to construct the complete zero-temperature phase diagram of the paramagnetic Anderson-Hubbard model. The localization length in our approximation is practically independent of the strength of Hubbard correlations. But the divergence of the localization length in a finite-size two-dimensional system at small disorder signifies the existence of an effective Anderson transition.
The DOS, the dynamic (optical) conductivity, and the phase diagram of a strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT + Σ approximation). Strong correlations are taken into account by the DMFT, and disorder is taken into account via an appropriate generalization of the self-consistent theory of localization. The DMFT effective single-impurity problem is solved by a numerical renormalization group (NRG); we consider the three-dimensional system with a semielliptic DOS. The correlated metal, Mott insulator, and correlated Anderson insulator phases are identified via the evolution of the DOS and dynamic conductivity, demonstrating both the Mott-Hubbard and Anderson metal-insulator transition and allowing the construction of the complete zero-temperature phase diagram of the Anderson-Hubbard model. Rather unusual is the possibility of a disorder-induced Mott insulator-to-metal transition.
We study the Hubbard model at half band-filling on a Bethe lattice with infinite coordination number in the paramagnetic insulating phase at zero temperature. We use the dynamical mean-field theory (DMFT) mapping to a single-impurity Anderson model with a bath whose properties have to be determined self-consistently. For a controlled and systematic implementation of the self-consistency scheme we use the fixed-energy (FE) approach to the DMFT. In FE-DMFT the onset and the width of the Hubbard bands are adjusted self-consistently but the energies of the bath levels are kept fixed relatively to both band edges during the calculation of self-consistent hybridization strengths between impurity and bath sites. Using the dynamical density-matrix renormalization group method (DDMRG) we calculate the density of states with a resolution ranging from 3% of the bare bandwidth W=4tW=4tW=4t at high energies to 0.5% in the vicinity of the gap. The DDMRG resolution and accuracy for the density of states and the gap is superior to those obtained with other numerical methods in previous DMFT investigations. We find that the Mott gap closes at a critical coupling Uc/t=4.45±0.05U_{\rm c}/t=4.45 \pm 0.05Uc​/t=4.45±0.05. At U=4.5tU=4.5tU=4.5t, we observe prominent shoulders near the onset of the Hubbard bands. They are the remainders of the quasi-particle resonance in the metallic phase which appears to split when the gap opens at UcU_{\rm c}Uc​.