arXiv:1101.4218 · Applied Physics Letters
Introduction of a dc bias into a high-Q superconducting microwave cavity
Fei Chen, A. J. Sirois, Raymond W. Simmonds, A. J. Rimberg
Abstract
We report a technique for applying a dc voltage or current bias to the center conductor of a high-quality factor superconducting microwave cavity without significantly disturbing selected cavity modes. This is accomplished by incorporating dc bias lines into the cavity at specific locations. The measured S-matrix parameters of the system are in good agreement with theoretical predictions and simulations. We find that at 4 K the quality factor of the cavity degrades by less than 1% under the application of a dc bias.