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arXiv:cond-mat/9512151

Hall Coefficient in the doped Mott Insulator

Pinaki Majumdar, H. R. Krishnamurthy

Published Dec 22, 1995• 0 citations
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Abstract

We compute the (zero frequency) Hall coefficient $R_H$, and the high frequency Hall constant $R_H^*$ for the strong coupling Hubbard model away from half-filling, in the $d=\infty$/ local approximation, using the new iterated perturbation scheme proposed by Kajueter and Kotliar. We find quantitative agreement of our $R_H^*$ with the QMC results obtained in two dimensions by Assaad and Imada [Phys. Rev. Lett. {\bf 74}, 3868 (1995)]. However while the {\it sign} of $R_H$ is quite accurately reproduced by $R_H^*$ the doping dependence of its magnitude at large U is not. We report results for the complete temperature $(T)$, doping $(x)$ and $U$ dependence of $R_H$ and $R_H^*$ and discuss their possible relevance to doped cuprates.

DOI
10.48550/arxiv.cond-mat/9512151

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We calculate with quantum Monte Carlo methods the Hall coefficient RH{R}_{H}RH​ for the 2D Hubbard model at small hole doping near half filling. In the weak coupling regime RH{R}_{H}RH​ is electronlike. In the strong coupling regime, where the mapping to the ttt- JJJ model is justified, RH{R}_{H}RH​ is electronlike with small amplitude in the temperature regime T>UT>UT>U, T<JT<JT<J and holelike in the temperature regime J<T<UJ<T<UJ<T<U. Our results are consistent with the picture of a Mott transition driven by the divergence of the effective mass as opposed to the vanishing of the number of charge carriers.
We investigate the Hall effect in two different theoretical models of strongly correlated systems: a system made of weakly coupled Luttinger liquids, in the presence of umklapp scattering, and the 2D triangular lattice, with nearest-neighbor hopping and a local Hubbard interaction. In the first model we use a memory function approach to compute the Hall coefficient as a function of temperature and frequency in the presence of umklapp scattering. We find a power-law correction to the free-fermion value (band value), with an exponent depending on the Luttinger parameter KρK_ρKρ​. At sufficiently high temperature or frequency the Hall coefficient approaches the band value. We discuss the applications to Hall experiments made in quasi 1D organic compounds. In the second model, the complete temperature and doping dependencies of the high-frequency Hall coefficient $\RH$ are evaluated analytically and numerically for small, intermediate, and strong interactions using various approximation schemes. We find that $\RH$ follows the semiclassical 1/qn∗1/qn^*1/qn∗ law near T=0, but exhibits a striking TTT-linear behavior with an interaction- and doping-dependent slope at high temperature. We compare our results with Hall measurements performed in cobaltates.
Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behavior. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band. To this end, we focus on the two-dimensional Hubbard model. Because the charge gap arises from on-site correlations, we have been refining the nonperturbative approach of Matsumoto and Mancini [Phys. Rev. B 55, 2095 (1997)] which incorporates local physics. Crucial to this method is a self-consistent two-site dynamical cluster expansion which builds in the nearest-neighbor energy scale J. At half-filling, we find that the spectral function possesses a gap of order U and is devoid of any coherent quasiparticle peaks although ordering or charge fractionalization are absent. At low temperatures, local antiferromagnetic correlations emerge. In the doped case, we find that the Fermi surface exceeds the Luttinger volume. The breakdown of Luttinger's theorem in the underdoped regime is traced both to the dynamically generated Mott gap as well to a nonvanishing of the imaginary part of the self-energy at the Fermi level. Spectral weight transfer across the Mott gap also emerges as a ubiquitous feature of a doped Mott insulator and suggests that high- and low-energy scales are inseparable. Additionally in the underdoped regime, we find that a pseudogap exists in the single-particle density of states as well as in the heat capacity. The pseudogap (which is set by the energy scale t2/U){t}^{2}/U)t2/U) is argued to be a ubiquitous feature of a lightly doped Mott state and simply represents the fact that hole transport involves double occupancy. In analogy with the Mott gap and antiferromagnetism, we propose that ordering may also accompany the formation of a pseudogap. We suggest a current pattern within a one-band model that preserves translational but breaks time-reversal symmetry along the canonical x and y axes but not along $x=\ifmmode\pm\else\textpm\fi{}y$ that is consistent with the experimental observations. Finally, we show that the Hall coefficient in a doped Mott insulator must change sign at a doping level x<1/3.x<1/3.x<1/3. The sign change is tied to a termination of strong correlation physics in the doped Mott state.
The Hall coefficient exhibits anomalous behavior in lightly doped Mott insulators. For strongly interacting electrons its computation has been challenged by analytical and numerical obstacles. We calculate the leading contributions in the recently derived thermodynamic formula for the Hall coefficient. We obtain its doping and temperature dependence for the square lattice tJ-model at high temperatures. The second order corrections are evaluated to be negligible. Quantum Monte Carlo sampling extends our results to lower temperatures. We find a divergence of the Hall coefficient toward the Mott limit and a sign reversal relative to Boltzmann equation's weak scattering prediction. The Hall current near the Mott phase is carried by a low density of spin-entangled vacancies, which should constitute the Cooper pairs in any superconducting phase at lower temperatures.
Abstract The Hall coefficient of the strongly interacting square lattice Hubbard model is calculated for temperatures between the antiferromagnetic interaction and the Mott gap scales. The leading order thermodynamic formula is evaluated for all doping concentrations. Second-order corrections of the thermodynamic formula are calculated and found to be negligible. The Hall coefficient diverges toward the Mott insulator. Below 45% doping the Hall sign is reversed relative to band structure-based Boltzmann’s equation. These results elucidate the effects of the Mott insulator on the charge carriers and their non-Fermi liquid transport.
We describe a new microscopic approach for analyzing interacting electron systems with local moments or, in principle, any local order parameter. We specialize attention to the doped Mott insulator phase of the Hubbard model, where standard weak-coupling perturbation methods fail. A rotationally invariant Stratonovich-Hubbard field is introduced to decouple the static spin components of the interaction at each site. Charge degrees of freedom are then treated by ``slave'' Hartree-Fock in the presence of a spatially varying random spin field. The effective action reduces to a classical Heisenberg model at half filling, insuring that the system has (i) finite-range order at T>0 with an exponentially diverging correlation length and (ii) a one-electron Mott-Hubbard gap in the presence of disorder. Away from half-filling properties are determined by strongly non-Gaussian fluctuations in the amplitude and orientation of the local spin fields. The saddle point equations of the theory at zero temperature reduce to inhomogeneous Hartree-Fock, so that disordering of domain walls at finite temperature is in principle included. We present preliminary small system results for the intermediate and large interaction regimes obtained by Monte Carlo simulation of random spin field configurations.