We describe a new microscopic approach for analyzing interacting electron systems with local moments or, in principle, any local order parameter. We specialize attention to the doped Mott insulator phase of the Hubbard model, where standard weak-coupling perturbation methods fail. A rotationally invariant Stratonovich-Hubbard field is introduced to decouple the static spin components of the interaction at each site. Charge degrees of freedom are then treated by ``slave'' Hartree-Fock in the presence of a spatially varying random spin field. The effective action reduces to a classical Heisenberg model at half filling, insuring that the system has (i) finite-range order at T>0 with an exponentially diverging correlation length and (ii) a one-electron Mott-Hubbard gap in the presence of disorder. Away from half-filling properties are determined by strongly non-Gaussian fluctuations in the amplitude and orientation of the local spin fields. The saddle point equations of the theory at zero temperature reduce to inhomogeneous Hartree-Fock, so that disordering of domain walls at finite temperature is in principle included. We present preliminary small system results for the intermediate and large interaction regimes obtained by Monte Carlo simulation of random spin field configurations.
We describe a new microscopic approach for analyzing interacting electron systems with local moments or, in principle, any local order parameter. We specialize attention to the doped Mott insulator phase of the Hubbard model, where standard weak-coupling perturbation methods fail. A rotationally invariant Stratonovich-Hubbard field is introduced to decouple the static spin components of the interaction at each site. Charge degrees of freedom are then treated by ``slave'' Hartree-Fock in the presence of a spatially varying random spin field. The effective action reduces to a classical Heisenberg model at half filling, insuring that the system has (i) finite-range order at T>0 with an exponentially diverging correlation length and (ii) a one-electron Mott-Hubbard gap in the presence of disorder. Away from half-filling properties are determined by strongly non-Gaussian fluctuations in the amplitude and orientation of the local spin fields. The saddle point equations of the theory at zero temperature reduce to inhomogeneous Hartree-Fock, so that disordering of domain walls at finite temperature is in principle included. We present preliminary small system results for the intermediate and large interaction regimes obtained by Monte Carlo simulation of random spin field configurations.
The two-dimensional (2D) Hubbard model is solved in a new way. The zero-frequency components of the Hubbard interaction are separated out and solved to infinite order to avoid the traditional difficulties associated with perturbation theory in the strong-coupling limit. Specifically the zero-frequency spin interaction is decoupled by the introduction of Stratonovich-Hubbard fields, while the zero-frequency charge interaction is treated by "slave" Hartree-Fock. This approach leads to the formation of large fluctuating spin moments, and as a consequence the one-electron spectral density exhibits a pseudogap. A Metropolis Monte Carlo method is used to perform the configuration averaging over Stratonovich-Hubbard fields. Within single Monte Carlo configurations the non-zero frequency components of the Hubbard interaction are treated by a high-order perturbation method, which incorporates the exchange of dynamical particle-hole fluctuations. Since a single configuration has neither translational symmetry nor spin rotational symmetry, these fluctuations do not have a well-defined crystal momentum or total spin. When the dynamical particle-hole fluctuations are included in the calculation, localized electron pairing results at elevated temperatures. Superconductivity presumably onsets when these localized pairs develop coherence, but this is not studied in the present work. The nature of the pairing interaction and the resulting pair eigenfunctions is studied.
The influence of local disorder on the thermodynamics of interacting electrons is studied within the infinite-dimensional disordered Hubbard model.Using a finite-temperature quantum Monte Carlo method, the averaged local moment and staggered susceptibility are calculated and the magnetic phase diagram at half-filling is constructed.From the averaged compressibility in the paramagnetic and antiferromagnetic phase we determine the metalinsulator transitions of the system.A rich transition scenario is revealed.Quite unexpectedly the disorder is found to stabilize the magnetic order in the strong-coupling limit.Randomness can significantly influence the low-temperature behaviour of interacting systems.In particular, it may lead to new phases which have no analogue in non-random systems [l].In the case of electrons, the simplest lattice model including both interactions and random potentials is the disordered Hubbard model.It is now known that even in the .mean-field.limit d + CQ [2,3] the Hubbard interaction remains dynamical [4] and leads to a highly non-trivial single-site problem with infinitely many coupled quantum degrees of freedom [5].This problem is, in fact, equivalent to an Anderson impurity model complemented by a self-consistency condition [6] and is thus amenable to numerical investigations [7] within a finite-temperature quantum Monte Carlo approach [81.In the absence of disorder this technique was already used by several groups to investigate the magnetic phase diagram [7,9], the Mott-Hubbard transition [lo, 1 1 1 and lately also superconductivity in a two-band version [12] of the Hubbard model in d = C Q ; thereby important new insight was gained.In this letter we wish to concentrate on the combined effect of disorder and interaction.We will study the effect of diagonal disorder on the low-temperature properties of the Hubbard model in d = CQ , in particular the competition between correlation-induced
We introduce a slave-fermion formulation in which to study the charge dynamics of the half-filled Hubbard model on the square lattice. In this description, the charge degrees of freedom are represented by fermionic holons and doublons and the Mott-insulating characteristics of the ground state are the consequence of holon–doublon bound-state formation. The bosonic spin degrees of freedom are described by the antiferromagnetic Heisenberg model, yielding long-ranged (Néel) magnetic order at zero temperature. Within this framework and in the self-consistent Born approximation, we perform systematic calculations of the average double occupancy, the electronic density of states, the spectral function and the optical conductivity. Qualitatively, our method reproduces the lower and upper Hubbard bands, the spectral-weight transfer into a coherent quasiparticle band at their lower edges and the renormalisation of the Mott gap, which is associated with holon–doublon binding, due to the interactions of both quasiparticle species with the magnons. The zeros of the Green function at the chemical potential give the Luttinger volume, the poles of the self-energy reflect the underlying quasiparticle dispersion with a spin-renormalised hopping parameter and the optical gap is directly related to the Mott gap. Quantitatively, the square-lattice Hubbard model is one of the best-characterised problems in correlated condensed matter and many numerical calculations, all with different strengths and weaknesses, exist with which to benchmark our approach. From the semi-quantitative accuracy of our results for all but the weakest interaction strengths, we conclude that a self-consistent treatment of the spin-fluctuation effects on the charge degrees of freedom captures all the essential physics of the antiferromagnetic Mott–Hubbard insulator. We remark in addition that an analytical approximation with these properties serves a vital function in developing a full understanding of the fundamental physics of the Mott state, both in the antiferromagnetic insulator and at finite temperatures and dopings.
We derive the disorder vs doping phase diagram of the doped Hubbard model via dynamical mean-field theory combined with typical medium theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven) metal-insulator transitions. We observe a transition from a metal to an Anderson-Mott insulator for increasing disorder strength at all interactions. In the weak correlation regime and rather small doping, the Anderson-Mott insulator displays properties which are similar to the ones found at half filling. In particular, this phase is characterized by the presence of empty sites. If we further increase either the doping or the correlation, however, an Anderson-Mott phase of a different kind arises for sharply weaker disorder strength. This phase occupies the largest part of the phase diagram in the strong-correlation regime and is characterized by the absence of the empty sites.
The cluster slave-spin method is employed to investigate systematically the ground state properties of the Hubbard model on a square lattice with doping $\ensuremath{\delta}$ and coupling strength U being its parameters. At half-filling, a relation between the staggered magnetization M and the antiferromagnetic (AFM) gap ${\mathrm{\ensuremath{\Delta}}}_{\text{AFM}}$ is established in the small U limit to compare with that from the Hartree-Fock theory, and a first-order metal-insulator Mott transition in the paramagnetic state is substantiated, which is characterized by discontinuities and hystereses at UMott=10t. The interaction Uc for the crossover in the AFM state, separating the weak- and strong-coupling regimes, is found to remain almost unchanged with large dopings, and smaller than UMott at half-filling because of long range AFM correlations. Finally, an overall phase diagram in the $U\ensuremath{-}\ensuremath{\delta}$ plane is presented, which is composed of four regimes: the AFM insulator at half-filling, the AFM metal with the compressibility $\ensuremath{\kappa}>0$ or $\ensuremath{\kappa}<0$, and the paramagnetic metal, as well as three phase transitions: (i) From the AFM metal to the paramagnetic metal, (ii) between the AFM metal phases with positive and negative $\ensuremath{\kappa}$, and (iii) separating the AFM insulating phase at $\ensuremath{\delta}=0$ from the AFM metal phase for $\ensuremath{\delta}>0$.
We investigate the single-band Hubbard model with random site energies in the strong-repulsion limit, as represented by the slave-boson formulation of the t-J model. It is essential to include the correlations between the slave-boson mean field and the disorder. This leads to the widening of the non-Fermi-liquid (``generalized Mott insulating'') region around half filling. In the Fermi-liquid regime we apply the renormalization-group method. The resulting phase diagram has superconducting, magnetic, and insulating phases. The disorder generally suppresses superconductivity and gives rise to the formation of localized magnetic moments.