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arXiv:1602.01276 · New Journal of Physics

Charge dynamics of the antiferromagnetically ordered Mott insulator

Xing-Jie Han, Yu Liu, Zhi-Yuan Liu, Xin Li, Jing Chen, Hai-Jun Liao, Zhi-Yuan Xie, Bruce Normand, Tao Xiang

Published Oct 6, 2016• 19 citations
arXivHTMLPDF

Abstract

We introduce a slave-fermion formulation in which to study the charge dynamics of the half-filled Hubbard model on the square lattice. In this description, the charge degrees of freedom are represented by fermionic holons and doublons and the Mott-insulating characteristics of the ground state are the consequence of holon–doublon bound-state formation. The bosonic spin degrees of freedom are described by the antiferromagnetic Heisenberg model, yielding long-ranged (Néel) magnetic order at zero temperature. Within this framework and in the self-consistent Born approximation, we perform systematic calculations of the average double occupancy, the electronic density of states, the spectral function and the optical conductivity. Qualitatively, our method reproduces the lower and upper Hubbard bands, the spectral-weight transfer into a coherent quasiparticle band at their lower edges and the renormalisation of the Mott gap, which is associated with holon–doublon binding, due to the interactions of both quasiparticle species with the magnons. The zeros of the Green function at the chemical potential give the Luttinger volume, the poles of the self-energy reflect the underlying quasiparticle dispersion with a spin-renormalised hopping parameter and the optical gap is directly related to the Mott gap. Quantitatively, the square-lattice Hubbard model is one of the best-characterised problems in correlated condensed matter and many numerical calculations, all with different strengths and weaknesses, exist with which to benchmark our approach. From the semi-quantitative accuracy of our results for all but the weakest interaction strengths, we conclude that a self-consistent treatment of the spin-fluctuation effects on the charge degrees of freedom captures all the essential physics of the antiferromagnetic Mott–Hubbard insulator. We remark in addition that an analytical approximation with these properties serves a vital function in developing a full understanding of the fundamental physics of the Mott state, both in the antiferromagnetic insulator and at finite temperatures and dopings.

DOI
10.1088/1367-2630/18/10/103004

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We introduce a slave-fermion formulation in which to study the charge dynamics of the half-filled Hubbard model on the square lattice. In this description, the charge degrees of freedom are represented by fermionic holons and doublons and the Mott-insulating characteristics of the ground state are the consequence of holon–doublon bound-state formation. The bosonic spin degrees of freedom are described by the antiferromagnetic Heisenberg model, yielding long-ranged (Néel) magnetic order at zero temperature. Within this framework and in the self-consistent Born approximation, we perform systematic calculations of the average double occupancy, the electronic density of states, the spectral function and the optical conductivity. Qualitatively, our method reproduces the lower and upper Hubbard bands, the spectral-weight transfer into a coherent quasiparticle band at their lower edges and the renormalisation of the Mott gap, which is associated with holon–doublon binding, due to the interactions of both quasiparticle species with the magnons. The zeros of the Green function at the chemical potential give the Luttinger volume, the poles of the self-energy reflect the underlying quasiparticle dispersion with a spin-renormalised hopping parameter and the optical gap is directly related to the Mott gap. Quantitatively, the square-lattice Hubbard model is one of the best-characterised problems in correlated condensed matter and many numerical calculations, all with different strengths and weaknesses, exist with which to benchmark our approach. From the semi-quantitative accuracy of our results for all but the weakest interaction strengths, we conclude that a self-consistent treatment of the spin-fluctuation effects on the charge degrees of freedom captures all the essential physics of the antiferromagnetic Mott–Hubbard insulator. We remark in addition that an analytical approximation with these properties serves a vital function in developing a full understanding of the fundamental physics of the Mott state, both in the antiferromagnetic insulator and at finite temperatures and dopings.
The Mott transition plays a key role in strongly correlated physics, but its nature is not yet fully understood. Motivated by the recent development of the Schwinger boson approach for the Kondo lattice, we propose in this paper a slave fermion algorithm to study the Mott transition. Upon local approximation, our method yields a phase diagram with a zero-temperature continuous (Mott) metal-insulator transition at finite Coulomb interaction UUU for the half-filled one-band Hubbard model on a square lattice, and the resistivity exhibits a critical scaling around the quantum Widom line. We argue that the Mott transition may be associated with a dynamic charge Kondo effect of local degenerate doublon and holon states, causing sharp resonances on the doublon, holon, and electron spectra. The transition is pushed to U=0U=0U=0 once intersite antiferromagnetic correlations are included, in agreement with exact numerical calculations. Our approach captures some essential features of the Mott transition and offers an alternative angle to view this important problem. It can be extended to study other correlated electron models with more complicated local interactions.
The Mott insulator is the quintessential strongly correlated electronic state. We obtain complete insight into the physics of the two-dimensional Mott insulator by extending the slave-fermion (holon-doublon) description to finite temperatures. We first benchmark its predictions against state-of-the-art quantum Monte Carlo simulations, demonstrating quantitative agreement. Qualitatively, the short-ranged spin fluctuations both induce holon-doublon bound states and renormalize the charge sector to form the Hubbard bands. The Mott gap is understood as the charge gap renormalized downward by these spin fluctuations. As temperature increases, the Mott gap closes before the charge gap, causing a pseudogap regime to appear naturally during the melting of the Mott insulator.
We argue that the binding between doubly occupied (doublon) and empty (holon) sites governs incoherent excitations and plays a key role in the Mott transition in strongly correlated Mott-Hubbard systems. We construct a new saddle-point solution with doublon-holon binding in the Kotliar-Ruckenstein slave-boson functional integral formulation of the Hubbard model. On a half-filled honeycomb lattice and square lattice, the ground state is found to exhibit a continuous transition from a paramagnetic semimetal/metal to an antiferromagnetic-ordered Slater insulator with coherent quasiparticles at Uc1{U}_{c1}Uc1​, followed by a Mott transition into an electron-fractionalized AF∗{}^{*}∗ phase without coherent excitations at Uc2{U}_{c2}Uc2​. Such a phase structure appears to be generic for bipartite lattices without frustration. We show that doublon-holon binding unites the three important ideas of strong correlation: coherent quasiparticles, incoherent Hubbard bands, and deconfined Mott insulator.
Motivated by recent experiments on Mott insulators, in both iridates and ultracold atoms, we theoretically study the effects of magnetic order on the Mott-Hubbard excitons. In particular, we focus on spin-mediated doublon-holon pairing in Hubbard materials. We use several complementary theoretical techniques: Mean-field theory to describe the spin degrees of freedom, the self-consistent Born approximation to characterize individual charge excitations across the Hubbard gap, and the Bethe-Salpeter equation to identify bound states of doublons and holons. The binding energy of the Mott exciton is found to increase with increasing the N\'eel order parameter, whereas the exciton mass decreases. We observe that these trends rely significantly on the retardation of the effective interaction, and require consideration of multiple effects from changing the magnetic order. Our results are consistent with the key qualitative trends observed in recent experiments on iridates. Moreover, the findings could have direct implications on ultracold atom Mott insulators where the Hubbard model is the exact description of the system and the microscopic degrees of freedom can be directly accessed.
The Mott metal-insulator transition in the Hubbard model is studied by constructing a dynamical slave-boson mean-field theory in the limit of large lattice coordination number zzz that incorporates the binding between doubly occupied (doublon) and empty (holon) sites. On the Mott insulating side where all doublons and holons bond in real space into excitonic pairs leading to the charge gap, the theory simplifies considerably to leading order in 1/z1/\sqrt{z}1/z​ and becomes exact on the infinite-zzz Bethe lattice. An asymptotic solution is obtained for a continuous Mott transition associated with the closing of the charge gap at a critical value of the Hubbard Uc{U}_{c}Uc​ and the corresponding doublon density ndc{n}_{d}^{c}ndc​, hopping ${\ensuremath{\chi}}_{d}^{c}$ and doublon-holon pairing ${\mathrm{\ensuremath{\Delta}}}_{d}^{c}$ amplitudes. We find ${U}_{c}={U}_{\mathrm{BR}}[1\ensuremath{-}2{n}_{d}^{c}\ensuremath{-}\sqrt{z}({\ensuremath{\chi}}_{d}^{c}+{\mathrm{\ensuremath{\Delta}}}_{d}^{c})]\ensuremath{\simeq}0.8{U}_{\mathrm{BR}}$, where UBR{U}_{\mathrm{BR}}UBR​ is the critical value for the Brinkman-Rice transition in the Gutzwiller approximation captured in the static mean-field solution of the slave-boson formulation of Kotliar and Ruckenstein. Thus, the Mott transition can be viewed as the quantum correction to the Brinkman-Rice transition due to doublon-holon binding. Quantitative comparisons are made to the results of the dynamical mean-field theory, showing good agreement. In the absence of magnetic order, the Mott insulator is a U(1)U(1)U(1) quantum spin liquid with nonzero intersite spinon hopping that survives the large-zzz limit and lifts the 2N{2}^{N}2N-fold degeneracy of the local moments. We show that the spinons are coupled to the doublons/holons by a dissipative compact U(1)U(1)U(1) gauge field in the deconfined phase, realizing the spin-charge separated gapless spin liquid Mott insulator.
We apply the recently developed slave fermion approach to study the doped Mott insulator in the one-band Hubbard and Hubbard-Heisenberg models. Our results produce several subtle features in the electron spectra and confirm the key role of antiferromagnetic (AFM) correlations in the appearance of the pseudogap. Upon hole doping, the electron spectra exhibit a single peak near the Fermi energy in the local approximation of the Hubbard model where AFM correlations are not included. When AFM correlations are included through an explicit mean-field Heisenberg interaction, a second peak emerges at slightly lower energy and pushes the other peak to higher energy, so that a pseudogap emerges between the two peaks at small doping. Both peaks grow rapidly with increasing doping and eventually merge together, where the pseudogap no longer exists. Detailed analyses of the spectral evolution with doping and the strength of the Heisenberg interaction confirm that the lower-energy peak comes from a polaronic mechanism due to the holon-spinon interaction in the AFM-correlated background and the higher-energy peak arises from the holon hybridization to form the electron quasiparticles. Thus, the pseudogap arises from the interplay of the polaronic and hybridization mechanisms. Our results are in good agreement with previous numerical calculations using the dynamical mean-field theory and its cluster extensions, but give a clearer picture of the underlying physics. Our work provides a promising perspective for clarifying the nature of doped Mott insulators and may serve as a starting point for more elaborate investigations in the future.