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arXiv:2302.04620 · Physical review. B./Physical review. B

Slave fermion interpretation of the pseudogap in doped Mott insulators

Zhuoqing Long, Jiangfan Wang, Yi‐feng Yang

Published Oct 17, 2023• 4 citations
arXivHTMLPDF

Abstract

We apply the recently developed slave fermion approach to study the doped Mott insulator in the one-band Hubbard and Hubbard-Heisenberg models. Our results produce several subtle features in the electron spectra and confirm the key role of antiferromagnetic (AFM) correlations in the appearance of the pseudogap. Upon hole doping, the electron spectra exhibit a single peak near the Fermi energy in the local approximation of the Hubbard model where AFM correlations are not included. When AFM correlations are included through an explicit mean-field Heisenberg interaction, a second peak emerges at slightly lower energy and pushes the other peak to higher energy, so that a pseudogap emerges between the two peaks at small doping. Both peaks grow rapidly with increasing doping and eventually merge together, where the pseudogap no longer exists. Detailed analyses of the spectral evolution with doping and the strength of the Heisenberg interaction confirm that the lower-energy peak comes from a polaronic mechanism due to the holon-spinon interaction in the AFM-correlated background and the higher-energy peak arises from the holon hybridization to form the electron quasiparticles. Thus, the pseudogap arises from the interplay of the polaronic and hybridization mechanisms. Our results are in good agreement with previous numerical calculations using the dynamical mean-field theory and its cluster extensions, but give a clearer picture of the underlying physics. Our work provides a promising perspective for clarifying the nature of doped Mott insulators and may serve as a starting point for more elaborate investigations in the future.

DOI
10.1103/physrevb.108.155127

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We apply the recently developed slave fermion approach to study the doped Mott insulator in the one-band Hubbard and Hubbard-Heisenberg models. Our results produce several subtle features in the electron spectra and confirm the key role of antiferromagnetic (AFM) correlations in the appearance of the pseudogap. Upon hole doping, the electron spectra exhibit a single peak near the Fermi energy in the local approximation of the Hubbard model where AFM correlations are not included. When AFM correlations are included through an explicit mean-field Heisenberg interaction, a second peak emerges at slightly lower energy and pushes the other peak to higher energy, so that a pseudogap emerges between the two peaks at small doping. Both peaks grow rapidly with increasing doping and eventually merge together, where the pseudogap no longer exists. Detailed analyses of the spectral evolution with doping and the strength of the Heisenberg interaction confirm that the lower-energy peak comes from a polaronic mechanism due to the holon-spinon interaction in the AFM-correlated background and the higher-energy peak arises from the holon hybridization to form the electron quasiparticles. Thus, the pseudogap arises from the interplay of the polaronic and hybridization mechanisms. Our results are in good agreement with previous numerical calculations using the dynamical mean-field theory and its cluster extensions, but give a clearer picture of the underlying physics. Our work provides a promising perspective for clarifying the nature of doped Mott insulators and may serve as a starting point for more elaborate investigations in the future.
We introduce a slave-fermion formulation in which to study the charge dynamics of the half-filled Hubbard model on the square lattice. In this description, the charge degrees of freedom are represented by fermionic holons and doublons and the Mott-insulating characteristics of the ground state are the consequence of holon–doublon bound-state formation. The bosonic spin degrees of freedom are described by the antiferromagnetic Heisenberg model, yielding long-ranged (Néel) magnetic order at zero temperature. Within this framework and in the self-consistent Born approximation, we perform systematic calculations of the average double occupancy, the electronic density of states, the spectral function and the optical conductivity. Qualitatively, our method reproduces the lower and upper Hubbard bands, the spectral-weight transfer into a coherent quasiparticle band at their lower edges and the renormalisation of the Mott gap, which is associated with holon–doublon binding, due to the interactions of both quasiparticle species with the magnons. The zeros of the Green function at the chemical potential give the Luttinger volume, the poles of the self-energy reflect the underlying quasiparticle dispersion with a spin-renormalised hopping parameter and the optical gap is directly related to the Mott gap. Quantitatively, the square-lattice Hubbard model is one of the best-characterised problems in correlated condensed matter and many numerical calculations, all with different strengths and weaknesses, exist with which to benchmark our approach. From the semi-quantitative accuracy of our results for all but the weakest interaction strengths, we conclude that a self-consistent treatment of the spin-fluctuation effects on the charge degrees of freedom captures all the essential physics of the antiferromagnetic Mott–Hubbard insulator. We remark in addition that an analytical approximation with these properties serves a vital function in developing a full understanding of the fundamental physics of the Mott state, both in the antiferromagnetic insulator and at finite temperatures and dopings.
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Underdoped Mott insulators provide us with a challenge of many-body physics. Recent renewed understanding is discussed in terms of the evolution of pole and zero structure of the single-particle Green's function. Pseudogap as well as Fermi arc/pocket structure in the underdoped cuprates is well reproduced from the recent cluster extension of the dynamical mean-field theory. Emergent coexisting zeros and poles set the underdoped Mott insulator apart from the Fermi liquid, separated by topological transitions. Cofermion proposed as a generalization of exciton in the slave-boson framework accounts for the origin of the zero surface formation. The cofermion-quasiparticle hybridization gap offers a natural understanding of the pseudogap and various unusual Mottness. Furthermore the cofermion offers a novel pairing mechanism, where the cofermion has two roles: It reinforces the Cooper pair as a pair partner of the quasiparticle and acts as a glue as well. It provides a strong insight for solving the puzzle found in the dichotomy of the gap structure.
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A slave-fermion gauge-theory approach of the t-J model: Doping-induced complex magnetic structure and Z2_{2}2​ spin-gapped anomalous metal in an antiferromagnetic doped Mott insulator
We reinvestigate a doped antiferromagnetic Mott insulator based on the slave-fermion approach of the t-J model, where antiferromagnetic spin fluctuations and doped holes are described by bosonic spinons and fermionic holons, respectively. Earlier studies have shown that an effective field theory for the doped antiferromagnetic Mott insulator is given by a non-relativistic fermion (holon) U(1) gauge theory for charge dynamics and a relativistic boson (spinon) U(1) gauge theory for spin dynamics, thus allowing an anomalous metallic phase where bosonic spinons are gapped away from an antiferromagnetic state, analogous to the U(1) spin liquid phase in the slave-boson approach of the t-J model. We argue that the emergent U(1) gauge structure in this approach is based on a simplified picture for antiferromagnetic correlations. Considering that dynamics of doped holes frustrates a collinear antiferromagnetic spin configuration, we show that doped holes enhance ferromagnetic spin correlations and result in a complex magnetic structure. The presence of such a complex spin texture reduces the U(1) gauge structure down to Z2_{2}2​, thus a different effective field theory results for the spin-gapped non-Fermi liquid metal at low temperatures because there are no gapless U(1) gauge fluctuations.
The cluster slave-spin method is introduced to systematically investigate the solutions of the Hubbard model including the symmetry-broken phases. In this method, the electron operator is factorized into a fermionic spinon describing the physical spin and a slave-spin describing the charge fluctuations. Following the U(1)U(1)U(1) formalism derived by Yu and Si [Phys. Rev. B 86, 085104 (2012)], it is shown that the self-consistent equations to explore various symmetry-broken density wave states can be constructed in general with a cluster of multiple slave-spin sites. We employ this method to study the antiferromagnetic (AFM) state in the single band Hubbard model with the two- and four-site clusters of slave spins. While the Hubbard gap, the charge gap due to the doubly occupied states, scales with the Hubbard interaction UUU as expected, the AFM gap $\mathrm{\ensuremath{\Delta}}$, the gap in the spinon dispersion in the AFM state, exhibits a crossover from the weak- to strong-coupling behaviors as UUU increases. Our cluster slave-spin method reproduces not only the traditional mean-field behavior of $\mathrm{\ensuremath{\Delta}}\ensuremath{\sim}U$ in the weak-coupling limit, but also the behavior of $\mathrm{\ensuremath{\Delta}}\ensuremath{\sim}{t}^{2}/U$ predicted by the superexchange mechanism in the strong-coupling limit. In addition, the holon-doublon correlator as functions of UUU and doping xxx is also computed, which exhibits a strong tendency toward the holon-doublon binding in the strong coupling regime. We further show that the quasiparticle weight obtained by the cluster slave-spin method is in a good agreement with the generalized Gutzwiller approximation in both AFM and paramagnetic states, and the results can be improved beyond the generalized Gutzwiller approximation as the cluster is enlarged from a single site to four sites. Our results demonstrate that the cluster slave-spin method can be a powerful tool to systematically investigate the strongly correlated system.